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revisions ltr description date (yr-mo-da) approved a changes in accordance with nor 5962-r043-92 91-11-25 m. l. poelking b changes in accordance with nor 5962-r070-93 93-01-22 m. l. poelking c change to class level v. update boilerplate. - ltg 97-07-11 t. m. hess d changes in accordance with nor 5962-r001-98 97-10-17 m. l. poelking e made rad hard changes in table i. added appendix a. - ltg 99-09-08 m. l. poelking f update boilerplate to mil-prf-38535 require ments. ? ltg 01-04-25 thomas m. hess g added tests v ol2 and v oh2 to table i sheet 6. ? ltg 01-12-21 thomas m. hess h correct the unit of measure from microseconds to nanoseconds for the dmag(l) to stdintl(l) test on sheet 10 in table i. - cfs 02-07-23 thomas m. hess rev g g g g g g g g g g g g g g sheet 35 36 37 38 39 40 41 42 43 44 45 46 47 48 rev c c c c c c e e c c e c f e e f c g g g sheet 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 rev status rev h c e f f g e e e h e c c c of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by christopher a. rauch defense supply center columbus standard microcircuit drawing checked by tim h. noh columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by william k. heckman microcircuit, digital, cmos, bus controller, remote terminal and and agencies of the department of defense drawing approval date 90-02-08 monitor, monolitihic silicon amsc n/a revision level h size a cage code 67268 5962-89577 sheet 1 of 48 dscc form 2233 apr 97 5962-e504-02 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class le vels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha ) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following examples. for device classes m and q: 5962 - 89577 01 x x ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? federal rha device case lead stock class designator type outline finish designator (see 1.2.1) (see 1.2. 2) (see 1.2.4) (see 1.2.5) \ / \/ drawing number for device class v: 5962 h 89577 01 v x x ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 ut1553bcrtm bus controller, re mote terminal and monitor 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as listed below. since the device class designator has been added after the original issuance of this drawing, device classes m and q designators will not be included in the pin and will not be marked on the device. device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 3 dscc form 2234 apr 97 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x cmga15-p84 84 pin grid array y cqcc2-j84 84 leaded chip carrier w/unformed leads z cqcc1-n84 84 square chip carrier 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings . 1 / supply voltage range ........................................................... 0.3 v to +7.0 v dc input/dc output voltage range (v i/o )................................. -0.3 v to (v dd +0.3 v) dc input current (i i ) ............................................................. 10 ma storage temperature range .................................................. -65 c to +150 c lead tempreature (solder ing 10 seconds) ............................ +300 c maximum power dissipation, (p d ) 2 / ................................... 300 mw maximum junction temperature (t j ) ................................... +175 c thermal resistance, junction-to-case ( jc ) ........................... see mil-std-1835 latchup immunity (i lu ) ........................................................ 150 ma duty cycle.............................................................................. 50 10 percent 1.4 recommended operating conditions . supply voltage (v dd ) ........................................................... 4.5 v to 5.5 v case operating temperature range (t c ) .............................. -55 c to +125 c operating frequency (f o ) ...................................................... 12 mhz .01 percent radiation features: total dose .......................................................................... 1 x 10 6 rads (si) single event phenomenon (sep) effective linear energy threshold, no upsets or latc hup (see 4.4.4.4) ..................................... 27 mev- cm 2 /mg dose rate upset (20 ns pulse) ........................................... 3 / dose rate latchup............................................................... 3 / dose rate su rvivability........................................................ 3 / neutron irradiated .............................................................. > 1 x 10 14 1.5 digital logic testing for device classes q and v . fault coverage measurement of manufacturing logic tests (mil-std-883, test met hod 5012)........................ 86.5 percent 1 / stresses above the absolute maximum rating may caus e permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2/ must withstand the added p d due to short circuit test (e.g., i os ). 3 / when characterized as a result of the proc uring activities request, the condition will be specified.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless ot herwise specified, the issues of these documents are those liste d in the issue of the department of defense i ndex of specifications and standards (dodi ss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, m anufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard elec tronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer' s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the requirements for microcircu it die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s) . the case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 1. 3.2.3 functional block diagram . the functional block diagram s hall be as specified on figure 2. 3.2.4 switching test circuit and waveforms . the switching test circuit and waveforms shall be as specified on figure 3. 3.2.5 radiation exposure circuit . the radiation exposure circuit s hall be as specified on figure 4.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 5 dscc form 2234 apr 97 3.3 electrical performanc e characteristics and postirr adiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos tirradiation parameter limits are as spec ified in table ia and shall apply over t he full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in tabl e iia. the electrical tests for each subgroup are defined in table ia. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device cl asses q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requi rements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a s hall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offs hore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 105 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 6 dscc form 2234 apr 97 table ia. electrical performance characteristics . test symbol conditions 4.5 v v dd 5.5 v 1 / -55 c t c +125 c unless otherwise specified group a subgroups device type limits unit min max low level input voltage ttl inputs v il 1, 2, 3 all 0.8 v high level input voltage ttl inputs 2 / v ih 1, 2, 3 all 2.0 v input leakage current ttl inputs i in v in = v dd or v ss 1, 2, 3 all -1 1 a m, d, p,l, r, f, g, h 1 all -10 10 with pull-up resistors v in = v dd 1, 2, 3 all -1 1 m, d, p,l, r, f, g, h 1 all -10 10 with pull-up resistors v in = v ss 1, 2, 3 all -550 -80 m, d, p,l, r, f, g, h 1 all -900 -150 low level output voltage ttl outputs v ol i ol = 3.2 ma 1, 2, 3 all 0.4 v low level output voltage cmos outputs v ol2 i ol = 50 a 1, 2, 3 all v ss +0.1 v high level output voltage ttl outputs v oh i oh = -400 a 1, 2, 3 all 2.4 v high level output voltage cmos outputs v oh2 i oh = -50 a 1, 2, 3 all v dd -0.1 v three-state output leakage current ttl outputs i oz v out = v dd or v ss 1, 2, 3 all -10 10 a short-circuit output current 3 / 4 / i os v dd = 5.5 v, v out = v dd 1, 2, 3 all 110 ma v dd = 5.5 v, v out = 0 v 1, 2, 3 all -110 ma 1, 3 35 a quiescent current 5 / 14 / q idd 2 all 1 ma average operating current 3 / 6 / i dd f = 12 mhz, c l = 50 pf 1, 2, 3 all 50 ma input capacitance c in see 4.4.1c 4 all 10 pf output capacitance c out 4 all 15 pf bidirect i/o capacitance c io 4 all 20 pf see footnotes at end of table.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 7 dscc form 2234 apr 97 table ia. electrical per formance characteristics . - continued test symbol conditions 4.5 v v dd 5.5 v -55 c t c +125 c 1 / unless otherwise specified group a subgroups device type limits unit min max functional tests see 4.4.1d 7, 8 0 10 see figure 3 burst dma timing dmack (l) to dmar high impedance t shl1 m,d,p,l,r,f,g,h 9, 10, 11 all -5 5 ns dmag (l) to dmack (l) 7 / t pzl2 see figure 3 burst dma timing 9, 10, 11 all 0 45 ns dmag (l) to tsctl (l) 15 / t phl2 9, 10, 11 all 2x mclk 4x mclk ns 0 40 tsctl (l) to address valid 3 / t pzl1 m,d,p,l,r,f,g,h 9, 10, 11 all -2 40 ns rwr / rrd (h) to dmack (h) t hlh2 see figure 3 burst dma timing 9, 10, 11 all thmc1 -10 thmc1 +10 ns tsctl (l) to rwr / rrd (l) t phl3 9, 10, 11 all mclk -20 mclk +20 ns dmag (l) to dmag (h) 15 / t pw2 9, 10, 11 all mclk 6xmclk ns dmar (l) to burst(h) t oozl1 9, 10, 11 all -10 10 ns dmar (l) to dmag (l) 8 / 15 / t phl4 mclk = 12 mhz mclk = 6 mhz see figure 3 burst dma timing 9, 10, 11 all 0 0 1.9 (0.8) 3.5 (1.9) s thmc2 -10 thmc2 +5 see figure 3 dma read timing address valid to rrd (l) (address setup) t shl1 m,d,p,l,r,f,g,h 9, 10, 11 all thmc2 -10 thmc2 +10 ns rrd (l) to rrd (h) t pw1 see figure 3 dma read timing 9, 10, 11 all mclk -10 mclk +5 ns rrd (h) to address high impedance (address hold) t hlz2 9, 10, 11 all thmc1 -10 thmc1 +10 ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 8 dscc form 2234 apr 97 table ia. electrical per formance characteristics . - continued test symbol conditions 4.5 v v dd 5.5 v -55 c t c +125 c 1 / unless otherwise specified group a subgroups device type limits unit min max rrd (h) to data high impedance (data hold) t hlz1 see figure 3 dma read timing 9, 10, 11 all 5 ns data valid to rrd (h) (data setup) t slh1 9, 10, 11 all 40 ns mclk(h) to mclkd2(h) t plh1 9, 10, 11 all 0 40 ns mclk(h) to tsctl / memcso (l) t plh2 9, 10, 11 all 0 40 ns mclk(h) to rrd (l) t iohl1 9, 10, 11 all 0 60 ns see figure 3 dma write timing thmc2 -10 thmc2 +5 address valid to rwr (l) (address setup) t shl1 m,d,p,l,r,f,g,h 9, 10, 11 all thmc2 -10 thmc2 +10 ns see figure 3 dma write timing 0 30 rwr (l) to data valid 13 / t oozl1 m,d,p,l,r,f,g,h 9, 10, 11 all -5 30 ns rwr (h) to data high impedance data hold) t hlz1 see figure 3 dma write timing 9, 10, 11 all thmc1 -10 thmc1 +10 ns rwr (h) to address high impedance (address hold) t hlz2 9, 10, 11 all thmc1 -10 thmc1 +10 ns rwr (l) to rwr (h) t pw1 9, 10, 11 all mclk -10 mclk +5 ns mclk(h) to mclkd2(h) t plh1 9, 10, 11 all 0 40 ns mclk(h) to tsctl / memcso (l) t plh2 9, 10, 11 all 0 40 ns mclk(h) to rwr (l) t iohl1 9, 10, 11 all 0 60 ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 9 dscc form 2234 apr 97 table ia. electrical per formance characteristics . - continued test symbol conditions 4.5 v v dd 5.5 v -55 c t c +125 c 1 / unless otherwise specified group a subgroups device type limits unit min max address valid to data valid 9 / toozh2 see figure 3 register read timing 9, 10, 11 all 80 ns rd + cs (h) to data high impedance (data hold) t hlh2 9, 10, 11 all 5 50 ns rd + cs (l) to data valid (data access) 9 / t oozh1 9, 10, 11 all 60 ns rd + cs (h) to address high impedance (address hold) t hlh1 9, 10, 11 all 5 ns rd + cs (l) to rd + cs (h) t pw1 9, 10, 11 all 60 ns rd + cs (h) to rd + cs (l) 15 / t pw2 9, 10, 11 all 80 ns address valid to wr + cs (l) (address setup) t shl1 see figure 3 register write timing 9, 10, 11 all 60 ns data valid to wr + cs (l) (data setup) t shl2 9, 10, 11 all 5 ns wr + cs (l) to wr + cs (h) t pw1 9, 10, 11 all 60 ns wr + cs (h) to data high impedance (data hold) t hlh1 9, 10, 11 all 10 ns wr + cs (h) to address high impedance (address hold) t hlh2 9, 10, 11 all 10 ns wr + cs (h) to wr + cs (l) 15 / t pw2 9, 10, 11 all 80 ns see footnotes at end of table.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level h sheet 10 dscc form 2234 apr 97 table ia. electrical per formance characteristics . - continued test symbol conditions 4.5 v v dd 5.5 v -55 c t c +125 c 1 / unless otherwise specified group a subgroups devic e type limits unit min max rd (l) to rrd (l) t phl1 see figure 3 dual port interface timing 9, 10, 11 all 0 30 ns wr (l) to rwr (l) t phl2 9, 10, 11 all 0 30 ns memcsi (l) to memcso (l) t phl3 9, 10, 11 all 0 30 ns memwin (h) to dma activity 10 / t oolh1 see figure 3 memory window (rt) mode 9, 10, 11 all 9 s memwin (l) to memwin (h) 10 / t pw1 9, 10, 11 all 0 10 / s data word to dma activity 15 / t pzl1 9, 10, 11 all 0 4 s dmag (l) to dmago (l) 12 / t phl1 see figure 3 arbitration when dmag is asserted before arbitration 9, 10, 11 all 0 30 ns 0 10 dmack (l) to dmar high impedance t shl1 m,d,p,l,r,f,g,h 9, 10, 11 all -5 5 ns mclk(h) to mclkd2(h) t plh2 9, 10, 11 all 0 40 ns memwin (h) to dmar (l) 10 / t oolh2 see figure 3 interrupt log list entry operation timing 9, 10, 11 all 9 s tsctl (h) to stdintp / stdintl (l) t oolh1 9, 10, 11 all 1 s stdintp (l) to stdintp (h) t pw1 9, 10, 11 all 320 340 ns dmack (l) to rwr (l) t oohl1 9, 10, 11 all 3xmclk -10 5xmclk ns dmag (l) to stdintl (l) t oohl2 9, 10, 11 all 8xmclk 10x mclk +40 ns see footnotes on next page.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 11 dscc form 2234 apr 97 table ia. electrical per formance characteristics . - continued 1 / devices supplied to this drawing are characterized at all levels m, d, p, l, r, f, g, and h of irradiation. however, this device is only tested at the 'h' level. pre and post irradiation values are identical unless otherwise specified in table ia. w hen performing post irradiation electrical measurements for any rha level, t a = +25 c. 2 / radiation hardened technology shall have a v ih pre-irradiation limit of 2.2 v. 3 / guaranteed to the limit specified in table ia. tested only at initial qualification, and after any design or process changes which may affect this characteristic. 4 / not more than one output may be shorted at a time for a maximum duration of one second. 5 / all inputs with internal pull-ups should be left fl oating. all other inputs should be tied high or low. 6 / includes current through input pull-up. instantaneous surge currents on the order of 1 ampere can occur during output switching. voltage supply should be adequately sized and decoupled to handle a large current surge. 7 / dmag must be asserted at least 45 ns prior to the rising edge of mclkd2 in order to be recognized for the next mclkd2 cycle. if dmag is not asserted at least 45 ns prior to the rising edge of mclkd2, dmag is not recognized until the following mclkd2 cycle. 8 / number in parentheses indicates the longest dmar (l) to dmag(l) allowed during worst- case bus switching conditions in order to meet mil-std-1553b rt response time. t he number not in parentheses applie s to all other circumstances. 9 / user must adhere to both t oozh1 and t oozh2 timing constraints to ensure valid data. 10 / memwin is an internal test pin only and shoul d be considered a floating pin and not for use. 11 / the pulse width = (11 s - t dma - t pzl1 ) where t dma is the time to complete dma activity. 12 / when dmag is asserted before dmar , the dmag signal passes through device 01 as dmago . 13 / timing is not valid for rt timer field of message status word. the timer value may update during a dma memory write. 14/ guaranteed to pre-and post-irradiation limits. 15/ guaranteed by functional test. table ib. sep test limits . 1 / 2 / 3 / device type t a = temperature 10 c 4 / memory pattern v cc = 4.5 v t a = +25 c bias for latch- up test v cc =5.5 v no latch-up let 4 / effective let no upsets maximum device cross section cm 2 /bit (let = 128) t a = +125 c all +25 c 5 / 27 8.5 x 10 -7 80 note: devices that contain cross coupled resi stance must be tested at the maximum rated t a 1 / for sep test conditions, see 4.4.4.4 herein. 2 / technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. test plan must be approved by trb and qualifying activity. 3 / values will be added when they become available. rad hard devices have not yet been tested for sep. 4 / worst case temperature t a = +125 c. 5 / for memories only.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 12 dscc form 2234 apr 97 device type 01 case outlines x y, z description terminal symbol terminal numbers v ss d7 d6 d5 d4 d3 d2 d1 d0 mrst bcrtsel lock taz tao raz rao tbz tbo rbz rbo clk v ss v dd f3 f1 g1 g2 g3 h1 h2 j1 k1 j2 l1 k2 k3 l2 l3 k4 l4 k6 k5 l5 j5 j6 l6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 ground bit 7 of the data bus, ttb bit 6 of the data bus, ttb bit 5 of the data bus, ttb bit 4 of the data bus, ttb bit 3 of the data bus, ttb bit 2 of the data bus, ttb bit 1 of the data bus, ttb bit 0, lsb of the data bus, ttb master reset, active low, ttl input bc/ rt select, tui lock, active high, tui transmit (channel) a z, to transmit (channel) a o, to receive (channel) a z, ti receive (channel) a o, ti transmit (channel) b z, to transmit (channel) b o, to receive (channel) b z, ti receive (channel) b o, ti clock, ti ground +5.0 v figure 1. terminal connections.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 13 dscc form 2234 apr 97 figure 1. terminal connections . - continued device type 01 case outlines x y, z description terminal symbol terminal numbers extovr timeron cha/ b comstr rtao rta1 rta2 rta3 rta4 rtpty a0 a1 a2 a3 a4 a5 a6 a7 v ss v dd a8 l7 k7 j7 l8 k8 l9 l10 k9 l11 k10 j10 k11 j11 h10 h11 g9 g10 g11 f10 f9 e9 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 external override, active low, tui (rt) timer on, active low, to channel a/ b, to (rt) command strobe, active low, to remote terminal address bit 0, lsb, tui remote terminal address bit 1, tui remote terminal address bit 2, tui remote terminal address bit 3, tui remote terminal address bit 4, tui remote terminal address, parity, tui bit 0 (lsb) of the address bus, ttb bit 1 of the address bus, ttb bit 2 of the address bus, ttb bit 3 of the address bus, ttb bit 4 of the address bus, ttb bit 5 of the address bus, ttb bit 6 of the address bus, ttb bit 7 of the address bus, ttb ground +5.0 v bit 8 of the address bus, tto
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 14 dscc form 2234 apr 97 figure 1. terminal connections . - continued device type 01 case outlines x y, z description terminal symbol terminal number a9 a10 a11 a12 a13 a14 a15 rwr rrd memcso tsctl dmar dmag dmack memcsi wr rd cs v ss v dd mclk aen e11 e10 f11 d11 d10 c11 b11 c10 a11 b10 b9 a10 a9 b8 a8 c7 b7 a7 b6 c6 c5 a5 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 bit 9 of the address bus, tto bit 10 of the address bus, tto bit 11 of the address bus, tto bit 12 of the address bus, tto bit 13 of the address bus, tto bit 14 of the address bus, tto bit 15 of the address bus, tto ram write, active low, to ram read (active low) memory chip select out, active low, to three-state control, active low, to dma request, active low, inac tive state is high impedance, tto dma grant, active low, ti dma acknowledge, active low, inactive state is high impedance, tto memory chip select in, active low, ti write, active low, ti read, active low, ti chip select, active low, ti ground +5.0 v memory clock, ti address enable, active high, ti
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 15 dscc form 2234 apr 97 notes: address and data busses are in the high-impedance state when idle. ti = ttl input to = ttl output ttb = bidirectional tto = three state ttl output tui = ttl input (pull-up) memwin is an internal test pin only and should be considered a floating pin and not for use. figure 1. terminal connections . - continued device type 01 case outlines x y, z terminal symbol terminal numbers description dmago stdintl stdintp hpint mclkd2 ssysf memwin burst bcrtf d15 d14 d13 d12 d11 d10 d9 d8 v dd b5 a6 a4 b4 a3 a2 b3 a1 b2 c2 b1 c1 d2 d1 f2 e2 e1 e3 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 dma grant out, low, to standard interrupt level, active low, inactive state is high impedance, tto standard interrupt pulse, active low, to high-priority interrupt active low, inactive state is high impedance, tto memory clock divided by two, to subsystem fail, active high, ti memory access window, active low, to burst, dma cycle, multiple word dma access, active high, to bcrt fail, active high, to bit 15 msb of the data bus, ttb bit 14 of the data bus, ttb bit 13 of the data bus, ttb bit 12 of the data bus, ttb bit 11 of the data bus, ttb bit 10 of the data bus, ttb bit 9 of the data bus, ttb bit 8 of the data bus, ttb +5.0 v
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 16 dscc form 2234 apr 97 figure 2. functional block diagram .
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 17 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms .
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 18 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 19 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 20 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 21 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 22 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 23 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 24 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 25 dscc form 2234 apr 97 figure 3. switching test circuit and waveforms . - continued
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 26 dscc form 2234 apr 97 open v dd = 5 v 0.5 v ground 13 (k3), 14 (l2), 17 (l4), 18 (k6), 25 (k7), 26 (j7), 27 (l8), 38 (h11), 39 (g9), 40 (g10), 41 (g11), 44 (e9), 45 (e11), 46 (e10), 47 (f11), 48 (d11), 49 (d10), 50 (c11), 51 (b11), 52 (c10), 53 (a11), 54 (b10), 55 (b9), 56 (a10), 58 (b8), 67 (b5), 68 (a6), 69 (a4), 70 (b4), 71 (a3), 73 (b3), 74 ( a1), 75 (b2), 76 (c2), 77 (b1), 78 (c1), 79 (d2), 80 (d1), 81 (f2), 82 (e2), 83 (e1) 10 (j2), 11 (l1), 12 (k2), 23 (l6), 24 (l7), 28 (k8), 43 (f9), 57 (a9), 59 (a8), 61 (b7), 64 (c6), 84 (e3) 1 (f3), 2 (f1), 3 (g1), 4 (g2) 5 (g3), 6 (h1), 7 (h2), 8 (j1), 9 (k1), 15 (l3), 16 (k4), 19 (k5), 20 (l5), 21 (j5), 22 (j6), 29 (l9), 30 (l10), 31 (k9), 32 (l11), 33 (k10), 34 (j10), 35 (k11), 36 (j11), 37 (h10), 42 (f10), 60 (c7), 62 (a7), 63 (b6), 65 (c5), 66 (a5), 72 (a2) pin grid array pin identification is in par enthesis. flat pack pin numbers is not in parenthesis. figure 4. radiation exposure circuit .
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 27 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and pow er dissipation, as applicable, in acco rdance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer' s technology review board (trb) in accordance with mil- prf-38535 and shall be made available to the acquiring or pr eparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table iia herein. c. additional screening for device class v beyond the requirement s of device class q shall be as specified in mil-prf- 38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for cla sses q and v shall be in accordance with mil- prf-38535 including groups a, b, c, d, and e inspections and as specified herein. q uality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. ins pections to be performed for device class m shall be those specified in method 5005 of mil- std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 28 dscc form 2234 apr 97 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. subgroups 5 and 6 in table i, method 5005 of table iv method 5010 of mil-std-883 shall be omitted. c. subgroup 4 (c in , c out and c io ) shall be measured only for the initial test and after process or design changes which may affect input/output capacitance. a minimum samp le size of 10 devices with zero rejects shall be required. d. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device. for device classes q and v, subgroups 7 and 8 shall include verifying t he functionality of the device; these tests shall have been fault graded in accordance with mil-st d-883, test method 5012 (see 1.5 herein). table iia. electric al test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) - - - - - - - - - - - - final electrical parameters (see 4.2) 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 3 / 1, 2, 3, 7, 8, 9, 10, 11 group a test requirements (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 7, 8a 1, 2, 7, 8a 1, 2, 7, 8a 3 / group d end-point electrical parameters (see 4.4) 1, 2, 7 ,8a 1, 2, 7, 8a 1, 2, 7, 8a group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1. 2 / pda applies to subgroups 1 and 7. 3 / delta limits as specified in table iib herein shall be required when specified and the delta values shall be completed with referenc e to the zero hour electrical parameter. table iib. delta limits parameter condition limits q idd t a = 25 c 10% of measured value or 35 a whichever is greater note: if device is tested at or below 35 a no deltas are required. deltas ar e performed at room temperature.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level e sheet 29 dscc form 2234 apr 97 4.4.2 group c inspection . the group c inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a or d. the test circuit shall be main tained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activi ty upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in acco rdance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level cont rol by the device manufacturer's trb in accordance with mil- prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q, and v shall be as specified in mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019 and as specified herein. 4.4.4.1.1 accelarated aging test . accelaerated aging tests shall be performed on all devices requiring a rha level greater than 5k rads (si). the post-anneal end-point electrical parameter limits shall be as specified in table ia herein and shall be the pre-irradiation end-point electr ical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may a ffect the rha response of the device. 4.4.4.2 dose rate induced latchup testing . dose rate induced latchup testing shall be performed in accoradance with test method 1020 of mil-std-883 and as specified herein (see 1.4). tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may effect the rha capability of the process. 4.4.4.3 dose rate upset testing . dose rate upset testing shall be performed in accoradance with test method 1021 of mil-std-883 and herein (see 1.4). a. transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may effect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q and v devices shall be performed as specified by a trb approved radiation hardness assurance plan and mil-prf-38535.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 30 dscc form 2234 apr 97 4.4.4.4 single event phenomena (sep) . sep testing shall be required on class v devices (see 1.4). sep testing shall be performed on the standard evaluation circuit (sec) or alternate sep test vehice as approved by the qualifying activity at initial qualification and after any design or process changes wh ich may affect the upse or latchup characteristics. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 100 errors or 10 6 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross-section shall be verified to be flux independent by measuring the cross-section at two flux ra tes which differ by at least an order of magnitude. d. the particle range shall be 20 microns in silicon. e. the upset test temperature shall be +25 c and the maximum rated operating temperature 10 c. f. bias conditions shall be defined by the manufacturer for latchup measurements. g. test four devices with zero failures. h. for sep test limits, see table ib herein. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing w ill replace the same generic device covered by a contractor-prepared specif ication or drawing. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform de fense supply center columbus when a system application requires configuration control and which smd's are applic able to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) shoul d contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va, columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil- prf-38535 and mil-hdbk-1331.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 31 dscc form 2234 apr 97 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va. 6.7 additional information . a copy of the following additional data shall be maintained and available from the device manufacturer: a. rha upset levels. b. test conditions (sep). c. number of upsets (sep). d. number of transients (sep). e. occurrence of latchup (sep).
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 32 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirem ents of mil-prf-38535 and the manufacturers approved qm plan for use in monolithic micr ocircuits, multichip modules (mcms), hy brids, electronic modules, or devices using chip and wire designs in accordance with mil-prf- 38534 are specified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available a choice of radiat ion hardiness assurance (rha) levels are reflected in the pin. a.1.2 pin . the pin shall be as shown in the following example: 5962 - 89577 01 q 9 x federal rha device device die die stock class designator type class code details designator (see a.2.1) (see a.2.2) designator (see a.2 .4) (see a.2.3) drawing number a.1.2.1 rha designator . device classes q and v rha identified die sha ll meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. a.1.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 ut1553bcrtm bus controller, remote terminal and monitor a.1.2.3 device class designator . device class device requirements documentation q or v certification and qualif ication to the die requirements of mil-prf-38535.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 33 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 a.1.2.4 die details . the die details designation shall be a unique letter which designates the die?s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for ea ch product and variant supplied to this appendix. a.1.2.4.1 die physical dimensions . die types die detail designator figure number 01 a a-1 b b-1 a.1.2.4.2 die bonding pad locations and electrical functions . die types die detail designator figure number 01 a a-1 b b-1 a.1.2.4.3 interface materials . die types die detail designator figure number 01 a a-1 b b-1 a.1.2.4.4 assembly related information . die types die detail designator figure number substrate potential 01 a a-1 tied to v dd b b-1 tied to v ss a.1.3 absolute maximum ratings . see paragraph 1.3 within the body of this drawing for details. a.1.4 recommended operating conditions . see paragraph 1.4 within the body of this drawing for details. a.2 applicable documents a.2.1 government specificat ions, standards, bulletin, and handbooks . unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in t he solicitation, form a part of this dr awing to the extent specified herein. specification department of defense mil-prf-38535 - integrated circuits, manufac turing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 34 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 handbook department of defense mil-hdbk-103 - list of standard microcircuit drawings. (copies of the specification, standards , bulletin, and handbook required by manufac turers in connection with specific acquisition functions should be obtained from the contracting activity or as di rected by the contracting activity). a.2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. a.3 requirements a.3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. a.3.2 design, construction and physical dimensions . the design, construction and phy sical dimensions shall be as specified in mil-prf-38535 and the manufacturer?s qm plan, for device classes q and v and herein. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2.4.1 and on figures a-1 and b-1. a.3.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as specified in a.1.2.4.2 and on figures a-1and b-1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1.2.4.3 and on figures a-1 and b-1. a.3.2.4 assembly related information . the assembly related information shall be as specified in a.1.2.4.4 and figures a-1 and b-1. a.3.2.5 radiation exposure circuit . the radiation exposure circuit shall be as defined within paragraph 3.2.5 of the body of this document. a.3.3 electrical performanc e characteristics and post- i rradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t-irradiation parameter limit s are as specified in table ia of the body of this document. a.3.4 electrical test requirements . the wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table ia. a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the ce rtification mark, the manufactu rer?s identification and the pin listed in 10.2 herein. the certification mark s hall be a ?qml? or ?q? as required by mil-prf-38535. a.3.6 certification of compliance . for device classes q and v, a certificat e of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirem ents of this drawing (see 60.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, t he requirements of mil-prf-38535 and the requirements herein. a.3.7 certificate of conformance . a certificate of conformance as requi red for device classes q and v in mil-prf-38535 shall be provided with each lot of microc ircuit die delivered to this drawing.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 35 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 a.4 quality assurance provisions a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the dev ice manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturer?s qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product usi ng the criteria defined within mil-std-883 tm 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil-std-883 tm2010 or the alternate procedures allowed within mil-std-883 tm5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required only for parts intended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v sha ll be as specified in mil-prf- 38535. end point electrical testing of packaged die shall be as specified in table iia her ein. group e tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4. 4.4.2, 4.4.4.3, and 4.4.4.4. a.5 die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be in accordance with the manufacturer?s qm plan or as specified in the purchase or der by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. a.6 notes a.6.1 intended use . microcircuit die conforming to th is drawing are intended for use in micr ocircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (origi nal equipment), design applications and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614)-692-0547. a.6.3 abbreviations, symbols and definitions . the abbreviations, symbols, and definitions used herein are defined with mil-prf-38535 and mil-hdbk-1331. a.6.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml- 38535. the vendors listed within qml-38535 have submitted a ce rtificate of compliance (see 30.6 herein) to dscc-va and have agreed to this drawing.
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 36 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions o die physical dimensions die size: 394 mils. x 394 mils. die thickness: 17.5 +/- 1 mils. o interface materials top metallization: si al cu 9 k ? -12.5k? backside metallization none: backgrind glassivation type: psg thickness 10 k? +/- 2.k? substrate: epi on single crystal silicon o assembly related information substrate potential: tied to v dd special assembly instructions: none figure a-1 die bonding pad locations and electrical functions o die physical dimensions die size: 394 mils. x 394 mils. die thickness: 17.5 +/- 1 mils. o interface materials top metallization: si al cu 9 k?-12.5k? backside metallization none: backgrind glassivation type: psg thickness 10 k? +/- 2.k? substrate: epi on single crystal silicon o assembly related information substrate potential: tied to v ss special assembly instructions: none figure b-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 37 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 -0.0035 -0.0099 -0.0163 -0.0226 -0.0290 -0.0354 -0.0418 -0.0482 -0.0545 -0.0609 -0.0673 -0.0737 -0.0800 -0.0864 -0.0928 -0.0992 -0.1056 -0.1119 -0.1183 -0.1247 -0.1311 -0.1374 -0.1438 -0.1502 -0.1566 -0.1630 -0.1743 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1676 0.1564 0.1500 0.1436 0.1372 0.1308 0.1245 0.1181 0.1117 0.1053 0.0990 0.0926 0.0862 0.0798 0.0734 0.0671 0.0607 0.0543 0.0479 0.0416 0.0352 0.0288 0.0224 v ss no connect d7 no connect no connect d6 no connect d5 no connect d4 no connect no connect no connect d3 no connect d2 no connect d1 no connect no connect no connect d0 no connect mrst no connect bcrtsel no connect no connect lock no connect taz no connect ta0 no connect no connect no connect raz no connect ra0 no connect tbz no connect tb0 no connect rbz no connect no connect rb0 no connect mhx12 note: the die center is the coordinate origin (0,0). figure a-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 38 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1904 -0.1905 -0.1904 -0.1743 -0.1629 -0.1566 -0.1502 -0.1438 -0.1374 -0.1311 -0.1247 -0.1183 -0.1119 -0.1056 -0.0992 -0.0928 -0.0864 -0.0800 0.0160 0.0097 0.0033 -0.0031 -0.0095 -0.0158 -0.0222 -0.0286 -0.0350 -0.0414 -0.0477 -0.0541 -0.0605 -0.0669 -0.0732 -0.0796 -0.0860 -0.0924 -0.0988 -0.1051 -0.1115 -0.1179 -0.1243 -0.1307 -0.1370 -0.1434 -0.1498 -0.1562 -0.1625 -0.1743 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 no connect no connect v ss v dd no connect no connect no connect extovr no connect no connect timeron no connect cha/b no connect no connect no connect comstr no connect rta0 no connect rta1 no connect rta2 no connect no connect no connect rta3 no connect rta4 no connect no connect rtpty no connect a0 no connect no connect no connect a1 no connect a2 no connect a3 no connect a4 no connect note: the die center is the coordinate origin (0,0). figure a-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 39 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 -0.0737 -0.0673 -0.0609 -0.0545 -0.0482 -0.0418 -0.0354 -0.0290 -0.0226 -0.0163 -0.0099 -0.0035 0.0029 0.0093 0.0156 0.0220 0.0284 0.0348 0.0411 0.0475 0.0539 0.0603 0.0667 0.0730 0.0794 0.0858 0.0922 0.0985 0.1049 0.1113 0.1177 0.1241 0.1305 0.1369 0.1433 0.1497 0.1560 0.1676 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1905 -0.1904 -0.1904 -0.1904 -0.1905 -0.1905 -0.1743 -0.1624 -0.1562 -0.1498 -0.1434 -0.1370 -0.1307 -0.1243 -0.1179 no connect no connect a5 no connect a6 no connect a7 no connect bcrtmsel no connect v ss v dd no connect no connect a8 no connect a9 no connect a10 no connect a11 no connect no connect no connect a12 no connect a13 no connect a14 no connect no connect no connect a15 no connect rwr no connect rrd no connect no connect memsco no connect tsctl no connect no connect no connect dmar no connect note: the die center is the coordinate origin (0,0). figure a-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 40 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1676 -0.1115 -0.1051 -0.0988 -0.0924 -0.0860 -0.0796 -0.0732 -0,0669 -0.0605 -0.0541 -0.0477 -0.0414 -0.0350 -0.0286 -0.0222 -0.0158 -0.0095 -0.0031 0.0033 0.0097 0.0160 0.0224 0.0288 0.0352 0.0416 0.0479 0.0543 0.0607 0.0671 0.0734 0.0798 0.0862 0.0926 0.0990 0.1053 0.1117 0.1181 0.1245 0.1308 0.1372 0.1436 0.1500 0.1564 0.1676 0.1840 dmag no connect no connect no connect dmack no connect memcsi no connect wr no connect no connect rd no connect cs no connect no connect v ss v dd no connect no connect no connect mclk no connect aen no connect no connect dmago no connect stdintl no connect stdintp no connect hpint no connect no connect no connect mclkd2 no connect ssysf no connect test no connect burst no connect no connect note: the die center is the coordinate origin (0,0). figure a-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 41 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 188 189 190 191 192 193 194 195 196 197 198 199 200 201 202 203 204 205 206 207 208 209 210 211 212 0.1559 0.1496 0.1432 0.1368 0.1304 0.1241 0.1177 0.1113 0.1049 0.0985 0.0922 0.0858 0.0794 0.0730 0.0667 0.0603 0.0539 0.0475 0.0411 0.0348 0.0284 0.0220 0.0156 0.0093 0.0029 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 0.1840 bcrtf no connect d15 no connect d14 no connect no connect no connect d13 no connect d12 no connect d11 no connect no connect no connect d10 no connect d9 no connect no connect d8 no connect no connect v dd note: the die center is the coordinate origin (0,0). figure a-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 42 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 165 158.7 152.4 146.1 139.8 133.5 127.2 120.9 114.6 108.3 102 95.7 89.4 83.1 76.8 70.5 64.2 57.9 51.6 45.3 39 32.7 26.4 20.1 13.8 7.5 1.2 -5.1 -11.4 -17.7 -24 -30.3 -36.6 -42.9 -49.2 -55.5 -61.8 -68.1 -74.4 -80.7 -87 -93.3 -99.6 105.9 112.2 118.5 124.8 131.1 137.4 143.7 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 185.9 v ss v dq no connect bf no connect d15 d14 no connect no connect no connect d13 no connect d12 d11 v sq no connect no connect no connect d10 no connect d9 no connect d8 no connect v dq v ss v dd v sq no connect no connect no connect d7 no connect d6 no connect d5 no connect no connect v sq d4 no connect d3 no connect d2 no connect no connect d0 mrst bcrtsel no connect note: the die center is the coordinate origin (0,0). figure b-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 43 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 150 156.3 162.6 168.9 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 185.9 185.9 185.9 185.9 170.2 163.9 157.4 151.1 144.8 138.5 132.2 125.9 119.6 113.3 107.1 100.8 94.5 88.2 81.9 75.6 69.3 63 56.7 50.4 44.1 37.8 31.5 25.2 18.9 12.6 6.3 0 -6.3 -12.6 -18.9 -25.2 -31.5 -37.8 -44.1 -50.4 -56.7 -63 -69.3 -75.6 -81.9 -88.2 -94.5 -100.8 -107.1 -113.4 no connect no connect v sq v ss v dd v dq no connect no connect lock no connect taz tao no connect raz no connect no connect rao no connect v sq tbz tbo no connect no connect rbz rbo no connect mhz12 no connect v dq v dd v ss v sq no connect no connect no connect no connect extovr no connect timeron no connect chab no connect v sq cmdst v dd no connect rta0 rta1 no connect no connect note: the die center is the coordinate origin (0,0). figure b-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 44 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 184.6 168.9 162.6 156.3 150 143.7 137.4 131.1 124.8 118.5 112.2 105.9 -99.6 -93.3 -87 -80.7 -74.4 -68.1 -61.8 -55.5 -49.2 -42.9 -36.6 -30.3 -24 -17.7 -11.4 -5.1 1.2 7.5 13.8 20.1 26.4 32.7 39 45.3 51.6 57.9 64.2 70.5 76.8 83.1 -119.7 -126 -132.3 -138.6 -144.9 -151.2 -157.5 -164 -170.3 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 rta2 rta3 rta4 no connect no connect no connect no connect v sq v dd v ss v dq no connect rtpty no connect a0 no connect a1 no connect no connect no connect a2 no connect no connect v sq a4 no connect no connect a5 no connect no connect a6 a7 no connect v dq v ss v dd v sq no connect no connect no connect a8 no connect a9 no connect a10 no connect no connect v sq a11 no connect note: the die center is the coordinate origin (0,0). figure b-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 45 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 89.4 95.7 102 108.3 114.6 120.9 127.2 133.5 139.8 146.1 152.4 158.7 165 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -186 -170.3 -163.8 -157.5 -151.2 -144.9 -138.6 -132.3 -126 -119.7 -113.4 -107.1 -100.8 -94.5 -88.2 -81.9 -75.6 -69.3 -63 -56.7 -50.4 -44.1 -37.8 -31.5 -25.2 -18.9 -12.6 -6.3 0 6.3 12.6 18.9 25.2 31.5 37.8 44.1 50.4 56.7 a12 no connect a13 a14 no connect a15 no connect rwr no connect rrd no connect v sq v ss v dd v dq no connect memcso no connect tsctl no connect dmar no connect no connect dmag no connect dmaak memcsi v sq no connect no connect no connect wr no connect rd no connect cs no connect v dq v ss v dd v sq no connect no connect no connect mclk no connect aen no connect dmago no connect note: the die center is the coordinate origin (0,0). figure b-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 46 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 die bonding pad locations and electrical functions pad xcenter ycenter pad name 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 180.7 63 69.3 75.6 81.9 88.2 94.5 100.8 107.1 113.4 119.7 126 132.3 138.6 144.9 151.2 157.6 163.9 170.2 no connect v sq stdint stdpul no connect hpint mckd2 no connect ssysf no connect test no connect burst no connect no connect no connect v sq v dd note: the die center is the coordinate origin (0,0). figure b-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 47 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 figure a-1
standard microcircuit drawing size a 5962-89577 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 48 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-89577 figure b-1
standard microcircuit drawing source approval bulletin date: 02-07-23 approved sources of supply for smd 5962-89577 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accept ed by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-8957701xa 5962-8957701xc 5962-8957701ya 5962-8957701yc 5962-8957701za 5962-8957701zc 5962h8957701xa 5962h8957701xc 5962h8957701ya 5962h8957701yc 5962h8957701za 5962h8957701zc 5962h8957701vxa 5962h8957701vxc 5962h8957701vya 5962h8957701vyc 5962h8957701vza 5962h8957701vzc 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 ut1553bcrtmga ut1553bcrtmgc ut1553bcrtmwa ut1553bcrtmwc ut1553bcrtmaa ut1553bcrtmac ut1553bcrtmgah ut1553bcrtmgch ut1553bcrtmwah ut1553bcrtmwch ut1553bcrtmaah ut1553bcrtmach ut1553bcrtmvgah ut1553bcrtmvgch ut1553bcrtmvwah ut1553bcrtmvwch ut1553bcrtmvaah ut1553bcrtmvach 1 of 2
standard microcircuit drawing source approval bulletin ? continued standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-8957701q9a 5962-8957701V9A 5962h8957701q9a 5962h8957701v9a 5962h8957701q9b 5962h8957701v9b 65342 65342 3 / 3 / 65342 65342 ut1553bcrtm-q die ut1553bcrtm-v die ut1553bcrtm-q die ut1553bcrtm-v die 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source of supply. vendor cage vendor name number and address 65342 utmc aeroflex microelectronics systems inc. 4350 centennial boulevard colorado springs, colorado 80907-3486 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin. 2 of 2

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