technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage t vj = 25c v ces 1.700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 200 a dc-collector current t c = 25 c i c 390 a periodischer kollektor spitzenstrom repetitive peak collctor current t p = 1 ms, t c = 80c i crm 400 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 1250 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 200 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 400 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 5,4 k a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 3,4 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 200a, v ge = 15v, t vj = 25c v ce sat - 2,0 2,45 v collector-emitter saturation voltage i c = 200a, v ge = 15v, t vj = 125c - 2,4 - v gate-schwellenspannung gate threshold voltage i c = 8ma, v ce = v ge , t vj = 25c v ge(th) 5,2 5,8 6,4 v gateladung gate charge v ge = -15v ... +15v q g - 1,2 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -17-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,6 - nf kollektor-emitter reststrom collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 25c i ces - -5ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: alfons wiesenthal date of publication: 2002-07-15 approved by: christoph lbke; 2002-07-15 revision: 2.0 1/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c =200a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 6,8 , t vj = 25c t d,on - 0,25 - s v ge = 15v, r g = 6,8 , t vj = 125c - 0,30 - s anstiegszeit (induktive last) i c = 200a, v ce = 900v rise time (inductive load) v ge = 15v, r g = 6,8 , t vj = 25c t r - 0,10 - s v ge = 15v, r g = 6,8 , t vj = 125c - 0,10 - s abschaltverz?gerungszeit (ind. last) i c = 200a, v ce = 900v turn off delay time (inductive load) v ge = 15v, r g = 6,8 , t vj = 25c t d,off - 0,85 - s v ge = 15v, r g = 6,8 , t vj = 125c - 1,00 - s fallzeit (induktive last) i c = 200a, v ce = 900v fall time (inductive load) v ge = 15v, r g = 6,8 , t vj = 25c t f - 0,12 - s v ge = 15v, r g = 6,8 , t vj = 125c - 0,20 - s einschaltverlustenergie pro puls i c = 200a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 6,8 , t vj = 125c, l = 60nh e on -80-mj abschaltverlustenergie pro puls i c =200a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 6,8 , t vj = 125c, l = 60nh e off -65-mj kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =1000v, v cemax =v ces -l ce di/dt i sc - 740 - a modulinduktivit?t stray inductance module anschlsse / terminals: 2 - 3 l ce - 20 - nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip t c =25c, pro zweig / per arm r cc+ee - 0,60 - m charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 200a, v ge = 0v, t vj = 25c v f - 1,8 2,2 v forward voltage i f = 200a, v ge = 0v, t vj = 125c - 1,9 - v rckstromspitze i f = 200a, - di f /dt = 2600a/s peak reverse recovery current v r = 900v, v ge = -15v, t vj = 25c i rm - 220 - a v r = 900v, v ge = -15v, t vj = 125c - 230 - a sperrverz?gerungsladung i f = 200a, - di f /dt = 2600a/s recovered charge v r = 900v, v ge = -15v, t vj = 25c q r -50-c v r = 900v, v ge = -15v, t vj = 125c -85-c abschaltenergie pro puls i f = 200a, - di f /dt = 2600a/s reverse recovery energy v r = 900v, v ge = -15v, t vj = 25c e rec -25-mj v r = 900v, v ge = -15v, t vj = 125c -50-mj 2/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,10 k/w thermal resistance, junction to case diode/diode, dc - - 0,16 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1 w/m*k / grease = 1 w/m*k r thck - 0,01 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj max - - 150 c betriebstemperatur operation temperature t vjop -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 20 mm luftstrecke clearance 11 mm cti comperative tracking index 425 anzugsdrehmoment f. mech. befestigung mounting torque anzugsdrehmoment f. elektr. anschlsse terminal connection torque gewicht weight g 340 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. - 6 nm m 2,5 - 5 nm anschlsse / terminals m6 schraube / screw m6 m 3 3/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data i c [a] v ce [v] i c [a] v ce [v] 0 50 100 150 200 250 300 350 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 50 100 150 200 250 300 350 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge=19v vge=15v vge=13v vge=11v vge=9v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data i c [a] v ge [v] i f [a] v f [v] 0 50 100 150 200 250 300 350 400 567891011 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 50 100 150 200 250 300 350 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data e [mj] i c [a] e [mj] r g [ ] 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 400 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge = 15v, r gon = r goff =6,8 , v ce = 900v, t vj = 125c 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45 50 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge = 15v, i c = 200a , v ce = 900v , t j = 125c 6/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r17 ke3 vorl?ufige daten preliminary data i 123 r i [k/kw] : igbt 25,45 37,61 29,04 i [s] : igbt 0,01565 0,03977 0,07521 r i [k/kw] : diode 54,22 60,17 38,1 i [s] : diode 0,02103 0,03011 0,08672 i c [a] v ce [v] 4 7,899 1 , 443 7,509 1 , 1583 sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge = 15v, r g = 6,8ohm, t vj = 125c 0 100 200 300 400 500 0 200 400 600 800 1000 1200 1400 1600 1800 ic; modul ic; chip transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth:diode zth:igbt 7/8 db_ff200r17ke3_2.0.xls
technische information / technical information igbt-module igbt-modules ff 200 r 17 ke3 vorl?ufige daten preliminary data 8/8 db_ff200r17ke3_2.0.xls
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