power transistors 1 2sd1263, 2sd1263a 2sd1263, 2sd1263a 2sd1263, 2sd1263a 2sd1263, 2sd1263a 2sd1263, 2sd1263a silicon npn triple diffusion planar type for power amplification features ? high collector to base voltage v cbo ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c 1: base 2: collector 3: emitter eiaj: sc-67 to-220f package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sd1263 v cbo 350 v voltage 2sd1263a 400 collector to 2sd1263 v ceo 250 v emitter voltage 2sd1263a 300 emitter to base voltage v ebo 5v peak collector current i cp 1.5 a collector current i c 0.75 a collector power t c = 25 cp c 35 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff 2sd1263 i ces v ce = 350 v, v be = 0 1 ma current 2sd1263a v ce = 400 v, v be = 0 1 collector cutoff 2sd1263 i ceo v ce = 150 v, i b = 0 1 ma current 2sd1263a v ce = 200 v, i b = 0 1 emitter cutoff current i ebo v eb = 5 v, i c = 0 1 ma collector to emitter 2sd1263 v ceo i c = 30 ma, i b = 0 250 v voltage 2sd1263a 300 forward current transfer ratio h fe1 * v ce = 10 v, i c = 0.3 a 70 250 h fe2 v ce = 10 v, i c = 1 a 10 base to emitter voltage v be v ce = 10 v, i c = 1 a 1.5 v collector to emitter saturation voltage v ce(sat) i c = 1 a, i b = 0.2 a 1 v transition frequency f t v ce = 5 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 a, 0.5 s storage time t stg v cc = 50 v 2 s fall time t f 0.5 s note) * : rank classification rank q p h fe1 70 to 150 120 to 250 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1
power transistors 2 2sd1263, 2sd1263a v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be area of safe operation (aso) r th(t) ? t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 i b =14ma 12ma 10ma 2ma 4ma 6ma 8ma t c =25 ? c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 2.4 2.0 1.6 0.4 1.2 0.8 0 4.0 3.2 2.4 1.6 0.8 t c =100 ? c 25 ? c 25 ? c v ce =10v base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =10v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.001 0.01 0.1 1 0.003 0.03 0.3 0.1 0.3 1 3 10 30 100 300 1000 v ce =10v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 non repetitive pulse t c =25 ? c i cp i c t=1ms 10ms dc 2sd1263 2sd1263a collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 10 2 10 1 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ? c/w )
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