kst-h025-002 1 STK630FC power mosfet s s e e m m i i c c o o n n d d u u c c t t o o r r features ? avalanche rugged technology. ? low input capacitance. ? low leakage current : 10 ? (max.) @ v ds =200v. ? low r ds(on) : 0.30 ? (typ.) ordering information type no. marking package code STK630FC stk630 to-220f-3sl outline dimensions unit : mm pin connections 1. gate 2. drain 3. source
kst-h025-002 2 STK630FC absolute maximum ratings characteristic symbol rating unit drain-source voltage v dss 200 v gate-source voltage v gss 30 v t c =25 9 a drain current (dc) * i d t c =100 5.7 a drain current (pulsed) * i dp 36 a drain power di ssipation (t c =25 ) p d 30 w single pulsed aval anche energy e as 162 mj avalanche current (repetitive) i ar 9 a repetitive avalanche energy e ar 7.2 mj peak diode recovery dv/dt dv/dt 5.0 v/ ? junction temperature t j 150 c storage temperature range t stg -55~150 c * limited by maximum junction temperature thermal resistance characteristic symbol typ. max. units thermal resistance junction-case r th(j-c) - 4.16 thermal resistance junction-ambient r th(j-a) - 62.5 /w
kst-h025-002 3 STK630FC electrical characteristics (tc=25 c) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage v (br)dss i d =250 ? , v gs =0v 200 - - v gate threshold voltage v gs(th) i d =250 ? , v ds =v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =200v, v gs =0v - - 10 ? gate leakage current i gss v ds =0v, v gs = 30v - - 100 ? static drain-source on-resistance r ds(on) v gs =10v, i d =4.5a - - 0.4 ? forward transfer conductance g fs v ds =40v, i d =4.5a - 3.87 - s input capacitance c iss - 550 - output capacitance c oss - 110 - reverse transfer capacitance c rss v gs =0v, v ds =25v f=1 ? - 40 - ? tu r n - o n de l ay t i m e t d(on) - 13 - rise time t r - 13 - turn-off delay time t d(off) - 30 - fall time t f v dd =100v, i d =9a r g =12 ? fig 13. ? - 18 - ? total gate charge q g - 22 - gate-source charge q gs - 4.3 - gate-drain charge q gd v ds =160v, v gs =10v, i d =9a fig 12. ? - 10.9 - nc source-drain diode ratings and characteristics (tc=25 c) characteristic symbol test condition min typ max units source current (dc) i s - - 9 source current (pulsed) i sp integral reverse diode in the mosfet - - 36 a diode forward voltage v sd v gs =0v, i s =9a - - 1.5 v reverse recovery time t rr - 140 - ns reverse recovery charge q rr i f =9a di s /dt=100a/ ? - 0.87 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=3mh, i as =9a, v dd =50v, r g =27 ? , starting t j =25 i sd 9a, di/dt 220a/ ? , v dd =100v, starting t j =25 pulse test : pulse width 400 ? , duty cycle 2% essentially independent of operating temperature
kst-h025-002 4 STK630FC fig. 2 i d - v gs fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig. 6 capacitance - v ds fig. 5 v gs - q g electrical characteristic curves ?
kst-h025-002 5 STK630FC c c ? fig. 8 r ds(on) - t j fig. 7 v ( br ) dss - t j fig. 9 i d - t c fig. 10 safe operating area fig. 11 thermal response ? ?? ? ?
kst-h025-002 6 STK630FC fig. 12 gate charge test circuit & waveform fig. 13 switching time test circuit & waveform fig. 14 e as test circuit & waveform
kst-h025-002 7 STK630FC fig. 15 peak diode recovery dv/dt test circuit & waveform
kst-h025-002 8 STK630FC these auk corp. products are intended for usage in general electronic equipment (office and communication equipment, measuri ng equipment, domestic electrification, etc.) please make sure that you consult with us before you use these auk products in equipm ents which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all typ es of safety device, etc.) auk cannot accept liability to any damage which may occur in case these auk products were used in the mentioned equipments without prior consultation with auk.
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