preliminary preliminary maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 20 v average forward current i f 0.5 a power dissipation p d 0.9 w* peak forward surge current (8.3ms) i fsm 3.0 a operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 139 c/w* electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =10v 0.2 1.0 ma bv r i r =1.0ma 20 v v f i f =100a 0.030 0.060 v v f i f =500a 0.065 0.100 v v f i f =10ma 0.145 0.200 v v f i f =100ma 0.235 0.280 v v f i f =200ma 0.280 0.330 v v f i f =500ma 0.390 0.460 v c t tbd pf CTLSH05-2M521HL surface mount ultra low v f silicon schottky diode tiny leadless module tm tlm521 case central semiconductor corp. tm r0 (20-january 2006) * fr-4 epoxy pcb with copper mounting pad area of 33mm 2 . marking code: cf description: the central semiconductor CTLSH05-2M521HL is a high performance hilo? 0.5a schottky diode designed for applications where small size and operational efficiency are the prime requirements. with a maximum power dissipation of 0.90w, and a very small package footprint (comparable to the sot-563), this leadless package design is capable of dissipating over 3 times the power of similar devices in comparable sized surface mount packages. features: ? hilo? device characteristics (high current/low v f ) ? ultra low forward voltage drop (v f =0.39v typ. @ 0.5a) ? high thermal efficiency ? small tlm 2x1mm case applications: ? dc/dc converters ? voltage clamping ? protection circuits ? battery powered portable equipment
preliminary central semiconductor corp. tm tlm521 case - mechanical outline CTLSH05-2M521HL surface mount ultra low v f silicon schottky diode tiny leadless module tm r0 (20-january 2006) lead code: 1) cathode 2) cathode 3) cathode 4) anode 5) anode marking code: cf suggested mounting pad layout for maximum power dissipation (dimensions in mm) for standard mounting refer to tlm521 package details
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