power transistors 70 2sa0885 (2sa885) silicon pnp epitaxial planar type for low-frequency power amplification complementary to 2sc1846 features ? output of 3 w can be obtained by a complementary pair with 2sc1846 ? to-126b package which requires no insulation plate for installa- tion to the heat sink absolute maximum ratings t c = 25 c 1: emitter 2: collector 3: base to-126b-a1 package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base voltage v cbo ? 45 v collector to emitter voltage v ceo ? 35 v emitter to base voltage v ebo ? 5v peak collector current i cp ? 1.5 a collector current i c ? 1a collector power dissipation p c 1.2 * 1 w 5 * 2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = ? 20 v, i e = 0 ? 0.1 a i ceo v ce = ? 20 v, i b = 0 ? 100 a emitter cutoff current i ebo v eb = ? 5v, i c = 0 ? 10 a collector to base voltage v cbo i c = ? 10 a, i e = 0 ? 45 v collector to emitter voltage v ceo i c = ? 2 ma, i b = 0 ? 35 v forward current transfer ratio h fe1 * v ce = ? 10 v, i c = ? 500 ma 85 340 h fe2 v ce = ? 5 v, i c = ? 1 a 50 collector to emitter saturation voltage v ce(sat) i c = ? 500 ma, i b = ? 50 ma ? 0.5 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 20 30 pf note) * : rank classification rank q r s h fe1 85 to 170 120 to 240 170 to 340 note) * 1: without heat sink * 2: with a 100 100 2 mm a1 heat sink 8.0 +0.5 0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 note.) the part number in the parenthesis shows conventional part number.
power transistors 71 2sa0885 0 6 5 4 3 2 1 0 200 40 80 160 120 180 20 60 140 100 (1)with a 100 100 2mm al heat sink (2)without heat sink (1) (2) ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 0 1.5 1.25 1.0 0.75 0.5 0.25 0 10 2 4 8 6 t c =25 ? c i b = 10ma 1ma 2ma 3ma 4ma 5ma 6ma 9ma 8ma 7ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 1.2 1.0 0.8 0.6 0.4 0.2 0 12 2 10 4 8 6 v ce = 10v t c =25 ? c base current i b ( ma ) collector current i c ( ma ) p c ? ? ? 0.01 0.03 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 i c /i b =10 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.01 0.03 0.1 0.3 1 0.03 1 3 0.1 10 0.3 i c /i b =10 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 0.03 0.3 1 1000 100 10 3 300 30 v ce = 10v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe v ce(sat) ? ? ? 1 3 10 30 100 0 40 80 120 200 160 20 60 100 180 140 v cb = 10v f=200mhz t c =25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 50 40 30 20 10 45 35 25 15 5 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.1 0.3 1 3 10 30 100 0 20 40 60 80 100 i c = 10ma t c =25 ? c base to emitter resistance r be ( k ? ) collector to emitter voltage v cer ( v ) f t ? ? ?
power transistors 72 2sa0885 1 10 10 2 10 3 10 4 0 160 40 120 80 140 20 100 60 v ce = 10v ambient temperature t a ( ? c ) i ceo ( t a ) i ceo ( t a =25 ? c ) 0.001 0.003 0.1 0.3 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 single pulse t c =25 ? c t=10ms t=1s i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a ) i ceo ?
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