feb.1999 mitsubishi transistor modules QM15TD-HB medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM15TD-HB ? i c collector current .......................... 15a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 250 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 24.5 7 15 7 15 7 12 11 25.5 25.5 76 93 105 18 28 45 2 f 5.5 p n bun eun evn bun ewn bwn bup eup evp bvp ewp bwp uvw tab#250, t=0.8 tab#100, t=0.5 7 13 (22.45) p n bup eup u bun eun bvp evp v bvn evn bwp ewp w bwn ewn label note: all transistor units are darlingtons.
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute mounting screw m5 typical value ratings 600 600 600 7 15 15 75 1 150 C40~+150 C40~+125 2500 1.47~1.96 15~20 90 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm g mitsubishi transistor modules QM15TD-HB medium power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 250 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =15a, i b =60ma Ci c =15a (diode forward voltage) i c =15a, v ce =2v v cc =300v, i c =15a, i b1 =90ma, i b2 =C300ma transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 1.0 1.0 40 2.0 2.5 1.5 1.5 10 2.0 1.65 2.8 0.35
feb.1999 ? 10 ? 10 ? 10 0 10 0 10 ? 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.2 1.6 2.0 2.4 2.8 3.2 v ce =2.0v t j =25? 50 40 30 20 10 0 012345 t j =25? i b =200ma i b =60ma i b =40ma i b =20ma i b =0.6a 3 10 7 5 4 3 2 2 10 7 5 4 3 0 10 23457 1 10 23457 2 10 2 3 v ce =2.0v v ce =5.0v t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? i b =60ma v be(sat) v ce(sat) 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 4 4 4 t j =25? t j =125? i c =10a i c =15a i c =5a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? i b2 =?00ma i b1 =90ma v cc =300v t on t f t s performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM15TD-HB medium power switching use insulated type
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 ? 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 0 10 2 10 7 5 4 3 2 1 10 7 5 4 3 2 23457 23457 0 10 t s t j =25? t j =125? i c =15a i b1 =90ma v cc =300v t f 0 0 200 400 800 100 300 20 500 600 700 8 4 12 16 24 28 32 t j =125? i b2 =?.0a i b2 =?.5a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t c =25? 500? 1ms dc 100? t w =10ms 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.4 0.6 1.0 1.2 1.4 1.6 2.0 0 7 5 3 2 0.8 1.8 4 4 4 4 5 3 24 non-repetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM15TD-HB medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 1 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 40 80 120 160 200 60 100 140 180 20 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 1 10 0 10 ? 10 t j =25? t j =125? i b2 =?00ma i b1 =90ma v cc =300v i rr q rr t rr 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 7 5 3 2 0.4 0.8 1.2 1.6 2.4 2.8 3.2 4 4 4 4 7 5 3 24 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM15TD-HB medium power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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