technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor emitter sperrspannung t v j = 25c v ces 1200 v collector emitter voltage kollektor dauergleichstrom t c = 60c i c,nom. 600 a dc-collector current t c = 25 c i c 700 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 60c i crm 1200 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 3900 w gate emitter spitzenspannung gate emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 600 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 1200 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 tk a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 600a, v ge = 15v, t vj = 25c v ce sat - 3,20 3,75 v collector-emitter saturation voltage i c = 600a, v ge = 15v, t vj = 125c - 3,85 - v gate-schwellenspannung gate threshold voltage i c = 24 ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -39-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 2,6 - nf gateladung gate charge v ge = -15v ... + 15v q g - 6,3 - c kollektor-emitter reststrom collector-emitter cut-off current gate emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: mod-d2; martin knecht date of publication : 2002-10-21 approved by: sm tm; wilhelm rusche revision: 2.1 75 v ce = 1200v, v ge = 0v, t vj = 25c -ma 5 i ces - 1/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 600 a, v cc = 600v turn on delay time (inductive load) v ge = 15v, r g = 1,5 ? , t vj = 25c t d,on - 0,10 - s v ge = 15v, r g = 1,5 ? , t vj = 125c - 0,13 - s anstiegszeit (induktive last) i c = 600 a, v cc = 600v rise time (inductive load) v ge = 15v, r g = 1,5 ? , t vj = 25c t r - 0,09 - s v ge = 15v, r g = 1,5 ? , t vj = 125c - 0,10 - s abschaltverz?gerungszeit (ind. last) i c = 600 a, v cc = 600v turn off delay time (inductive load) v ge = 15v, r g = 1,5 ? , t vj = 25c t d,off - 0,53 - s v ge = 15v, r g = 1,5 ? , t vj = 125c - 0,59 - s fallzeit (induktive last) i c = 600 a, v cc = 600v fall time (inductive load) v ge = 15v, r g = 1,5 ? , t vj = 25c t f - 0,06 - s v ge = 15v, r g = 1,5 ? , t vj = 125c - 0,07 - s einschaltverlustenergie pro puls i c = 600 a, v cc = 600v, v ge = 15v turn-on energy loss per pulse r g = 1,5 ? , t vj = 125c, l = 80 nh abschaltverlustenergie pro puls i c = 600 a, v cc = 600v, v ge = 15v turn off energy loss per pulse r g = 1,5 ? , t vj = 125c, l = 80 nh kurzschlu?verhalten t p 10s, v ge 15v sc data t vj 125c, v cc =900 v, v cemax =v ces -l ce di/dt modulinduktivit?t stray inductance module l ce - 16 - nh modul leitungswiderstand, anschlsse - chip lead resistance, terminals - chip t c = 25c r cc'+ee' - 0,5 - m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 600 a, v ge = 0v, t vj = 25c v f - 2,00 2,55 v forward voltage i f = 600 a, v ge = 0v, t vj = 125c - 1,70 - v rckstromspitze i f = 600 a, - di f /dt = 8000 a/s peak reverse recovery current v r = 600v, v ge = -15v, t vj = 25c i rm - 420 - a v r = 600v, v ge = -15v, t vj = 125c - 620 - a sperrverz?gerungsladung i f = 600 a, - di f /dt = 8000 a/s recovered charge v r = 600v, v ge = -15v, t vj = 25c q r -40-c v r = 600v, v ge = -15v, t vj = 125c -90-c abschaltenergie pro puls i f = 600 a, - di f /dt = 8000 a/s reverse recovery energy v r = 600v, v ge = -15v, t vj = 25c e rec -25-mj v r = 600v, v ge = -15v, t vj = 125c -48-mj - i sc - 3900 - mj a e on -mj 22 e off -46- 2/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,032 k/w thermal resistance, junction to case diode/diode, dc - - 0,050 k/w bergangs w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1 w/m*k / grease = 1 w/m*k r thck - 0,010 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj max - - 150 c betriebstemperatur operation temperature t vj op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix material modulgrundplatte material of module baseplate cu innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance luftstrecke clearance cti comperative tracking index 425 anzugsdrehmoment f. mech. befestigung nm mounting torque anzugsdrehmoment f. elektr. anschlsse anschlsse / terminals m6 2,5 - 5,0 nm terminal connection torque anschlsse / terminals m4 1,1 - 2,0 nm gewicht weight g 340 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. schraube m6 / screw m6 m 3,0 - m 11 mm 20 mm 6,0 3/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data i c [a] v ce [v] i c [a] v ce [v] 0 200 400 600 800 1000 1200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 200 400 600 800 1000 1200 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data i c [a] v ge [v] i f [a] v f [v] 0 200 400 600 800 1000 1200 56789101112 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 200 400 600 800 1000 1200 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data e [mj] i c [a] e [mj] r g [ ? ] 0 20 40 60 80 100 120 140 160 0 200 400 600 800 1000 1200 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge =15 v , r g = 1,5 ? , v ce = 600v, t vj = 125c 0 25 50 75 100 125 150 175 200 225 024681012 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge =15 v, i c = 600 a , v ce = 600v , t vj = 125c 6/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data i c [a] v ce [v] 0 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip sicherer arbeitsbereich igbt (rbsoa) v ge = 15v, r g = 1,5 ? , t vj = 125c reverse bias safe operation area igbt (rbsoa) 7/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data z thjc [k / w] t [s] i 1234 r i [k/kw] : igbt 3,57 10,83 14,12 3,48 transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,001 0,01 0,1 0,001 0,01 0,1 1 10 zth:igbt zth:diode 8/9 db_fz600r12ks4_2.1 2002-10-21
technische information / technical information igbt-module igbt-modules fz600r12ks4 vorl?ufige daten preliminary data geh?usema?e / schaltbild package outline / circuit diagram 9/9 db_fz600r12ks4_2.1 2002-10-21
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