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savantic semiconductor product specification silicon npn power transistors 2SD2374 2SD2374a d escription with to-220f package complement to type 2sb1548/1548a low collector saturation voltage high forward current transfer ratio h fe which has satisfactory linearity applications for power amplifications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2SD2374 60 v cbo collector-base voltage 2SD2374a open emitter 80 v 2SD2374 60 v ceo collector-emitter voltage 2SD2374a open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 5 a t a =25 2 p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2374 2SD2374a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD2374 60 v ceo collector-emitter voltage 2SD2374a i c =30ma ; i b =0 80 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.375a 1.2 v v be base-emitter voltage i c =3a ; v ce =4v 1.8 v 2SD2374 v cb =60v; i e =0 i cbo collector cut-off current 2SD2374a v cb =80v; i e =0 200 a 2SD2374 v ce =30v; i b =0 i ceo collector cut-off current 2SD2374a v ce =60v; i b =0 300 a i ebo emitter cut-off current v eb =6v; i c =0 1 ma h fe-1 dc current gain i c =1a ; v ce =4v 70 250 h fe-2 dc current gain i c =3a ; v ce =4v 10 f t transition frequency i c =0.5a ; v ce =10v 30 mhz switching times t on turn-on time 0.5 s t s storage time 2.5 s t f fall time i c =1.0a; i b1 =-i b2 =0.1a v cc =50v 0.4 s h fe-1 classifications q p 70-150 120-250 savantic semiconductor product specification 3 silicon npn power transistors 2SD2374 2SD2374a package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SD2374 2SD2374a |
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