View TFBS6711-TR1_2232100.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

20208 www.vishay.com 25 8 document number 8 4676 rev. 1.3, 21-feb-07 tfbs6711 vishay semiconductors low profile fast infrared transceiver (fir, 4 mbit/s) for irda ? applications description the tfbs6711 is the smallest fir transceiver avai- lable. it is a low profile and low-power irda trans- ceiver. compliant to irda?s physical layer specifica- tion, the tfbs6711 supports data transmission rates from 9.6 kbit/s to 4 mbit/s with a typical link distance of 50 cm. it also enables mobile phones and pdas to function as universal remote controls for televisions, dvds and other home appliances. the tfbs6711 emitter covers a range of 6.5 meters with common remote control receivers. integrated within the trans- ceiver module is a pin photodiode, an infrared emit- ter, and a low-power control ic. the tfbs6711 can be completely shutdown, achieving very low power consumption. the tfbs6711 has an i/o voltage related to the supply vo ltage while tfbs6712 sup- ports low voltage logic of 1. 8 v allowing direct connec- tion to a microcontroller?s i/os operating at 1. 8 v. features ? lowest profile: 1.9 mm ? smallest footprint: 6.0 mm x 3.05 mm ? surface mount package ? irda transmit distance: 50 cm typical ? best remote control distance: 6.5 m on-axis ? fast data rates: from 9.6 kbit/s to 4 mbit/s ? low shutdown current: 0.01 a ? operating voltage: 2.4 v to 3.6 v ? reduced pin count: 6 pins ? i/o voltage equal to the supply voltage ? pin compatibility: tfbs4711 and tfbs5711 ? integrated emi protection ? no external shield required ?iec 60 8 25-1 class 1, eye safe ? qualified for lead (pb)-free and sn/pb processing ? compliant to irda physical layer specification ? split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, us patent no. 6,157,476 ? lead (pb)-free device ? qualified for lead (pb)-free and sn/pb processing (msl4) ? device in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high-speed data transfer using infrared wireless communication ? mobile phones ? camera phones ?pdas ? mp3 players ? digital cameras ? irda adapters or dongles package options ordering information part number qty/reel or tube description and remarks TFBS6711-TR1 1000 pcs oriented in carrier tape for side view surface mounting tfbs6711-tr3 2500 pcs oriented in carrier tape for side view surface mounting note: a version oriented in the carrier tape fo r top view mounting is available on request e4
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 259 functional block diagram pin description tfbs6711 weight: 50 mg controlled driver tri-state driver gnd txd rxd v cc2 v cc1 amplifier comparator sd logic & control 19298 figure 1. functional block diagramm pin number function description i/o active 1v cc2 , ired anode ired anode to be externally connected to v cc2 . for higher voltages as 3.6 v an external resistor might be neces sary for reducing the internal power dissipation. see derating curves. this pin is allowed to be supplied from an uncontrolled power supply separated from the controlled v cc1 - supply 2 txd transmit data input i high 3 rxd received data output, push-pull cmos driver output capable of driving a standard cmos load. no external pull-up or pull-down resistor is required. floating with a weak pull-up of 500 k (typ.) in shutdown mode. the rxd output echos the txd input during transmission. olow 4 sd shutdown, also used for dynamic mode switching i high 5v cc1 supply voltage 6 gnd ground figure 2. pinning 19428 pin 1
www.vishay.com 260 document number 8 4676 rev. 1.3, 21-feb-07 tfbs6711 vishay semiconductors absolute maximum ratings reference point pin, gnd unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. definitions: in the vishay transceiver data sheets the following nomenclature is used for defining the irda operating modes: sir: 2.4 kbit/s to 115.2 kbit/s, equival ent to the basic serial infrared standard wi th the physical layer version irphy 1.0 mir: 576 kbit/s to 1152 kbit/s fir: 4 mbit/s vfir: 16 mbit/s irda ? , the infrared data association, implemented mir and fir with irphy 1.1, followed by irphy 1.2, adding the sir low power stan- dard. irphy 1.3 extended the low power option to mir and fir and vfir was added with irphy 1.4. a new version of the standard i n any case obsoletes the former version. parameter test conditions symbol min ty p. max unit supply voltage range, transceiver 0 v < v cc2 < 6 v v cc1 - 0.5 6 v supply voltage range, transmitter 0 v < v cc1 < 6 v v cc2 - 0.5 6.5 v input currents for all pins, except ired anode pin 10 ma output sinking current 25 ma power dissipation p d 500 mw junction temperature t j 125 c ambient temperature range (operating) t amb - 25 + 8 5c storage temperature range t stg - 25 + 8 5c soldering temperature 260 c average output current i ired (dc) 125 ma repetitive pulse output current < 90 s, t on < 20 % i ired (rp) 600 ma ired anode voltage i ireda - 0.5 6.5 v voltage at all inputs and outputs v in > v cc1 is allowed v in - 0.5 5.5 v virtual source size me thod: (1-1/e) encircled energy d1.5 mm maximum intensity for class 1 operation of iec60 8 25-1 or en60 8 25-1, edition jan. 2001 irda ? specified maximum limit internal limitation to class 1 500 mw/sr due to the internal limitation measures the device is a ?class 1? device. it will not exceed the irda ? intensity limit of 500 mw/sr
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 261 electrical characteristics t amb = 25 c, v cc = 2.4 v to 3.6 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. *) standard illuminant a **) the typical threshold level is 0.5 x v cc (v cc = 3 v). it is recommended to use the specifi ed min/max values to av oid increased operating/ shutdown currents. parameters test conditions/pins symbol min ty p. max unit transceiver supply voltage v cc 2.4 3.6 v dynamic supply current receive mode only. in transmit mode, add additional 8 5 ma (typ) for ired current. add rxd output current depending on rxd load. sd = low, sir mode i cc 1.7 3 ma sd = low, mir/fir mode i cc 1.9 3.3 ma shutdown supply current sd = high t = 25 c, not ambient light sensitive, detector is disabled in shutdown mode i sd 1a shutdown supply current sd = high t = 8 5 c, not ambient light sensitive i sd 5a operating temperature range t a - 25 + 8 5c output voltage low i ol = 1 ma c load = 15 pf v ol 0.4 v output voltage high i oh = - 250 a c load = 15 pf v oh 0.9 x v cc v internal rxd pull-up r rxd 400 500 600 k input voltage low (txd, sd) v il - 0.5 0.5 v input voltage high (txd, sd) v ih v cc - 0.5 v cc + 0.5 v input leakage current (txd, sd) i ich - 1 0.05 + 1 a input capacitance (txd, sd) c i 5pf
www.vishay.com 262 document number 8 4676 rev. 1.3, 21-feb-07 tfbs6711 vishay semiconductors optoelectronic characteristics t amb = 25 c, v cc = 2.4 v to 3.6 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. note: all timing data measured with 4 mbit/s are measured using the irda ? fir transmission header. the data given here are valid 5 s after starting the preamble. *) irda latency definition: receiver latency allowance (milliseconds or mi croseconds) is the maximum ti me after a node ceases trans- mitting before the node?s receiver recovers its specified sensitivity. during this period and also dur ing the receiver start up time (after power on or shut down) the rxd output may be in an undefined state. **) irda sensitivity definition: minimum irradiance e e in angular range , power per unit area. the receiver must meet the ber speci- fication while the source is operating at the minimum intens ity in angular range into the minimum half-angle range at the maxim um link length ***) maximum irradiance e e in angular range , power per unit area. the optic al delivered to the detector by a source operating at the maximum intensity in angular range at minimum link length must not cause receiver over drive distortion and possible related lin k errors. if placed at the active output interface reference plane of the transmitter, the receiver must me et its bit error ratio (ber) s pecification. for more definitions see the document ?symbols and termi nology? on the vishay website (http://www.vishay.com/docs/ 8 2512/ 8 2512.pdf). parameter test conditions symbol min ty p. max unit receiver minimum irradiance e e in angular range **) 9.6 kbit/s to 115.2 kbit/s = 8 50 nm - 900 nm, v cc = 2.4 v e e 50 (5) 8 0 ( 8 ) mw/m 2 (w/cm 2 ) minimum irradiance e e in angular range mir mode 1.152 mbit/s = 8 50 nm - 900 nm, v cc = 2.4 v e e 100 (10) mw/m 2 (w/cm 2 ) minimum irradiance e e in angular range fir mode 4 mbit/s = 8 50 nm - 900 nm, v cc = 2.4 v e e 120 (12) 200 (20) mw/m 2 (w/cm 2 ) maximum irradiance e e in angular range ***) = 8 50 nm - 900 nm e e 5 (500) kw/m 2 (mw/cm 2 ) no detection receiver input irradiance (fluorescent light noise suppression) e e 4 (0.4) mw/m 2 (w/cm 2 ) rise time of output signal 10 % to 90 %, c l = 15 pf t r (rxd) 10 50 ns fall time of output signal 90 % to 10 %, c l = 15 pf t f (rxd) 10 50 ns rxd pulse width of output signal, 50 %, sir mode input pulse length 1.4 s < p wopt < 25 s t pw 1.4 1. 8 2.6 s rxd pulse width of output signal, 50 %, mir mode input pulse length p wopt = 217 ns, 1.152 mbit/s t pw 110 250 270 ns rxd pulse width of output signal, 50 %, fir mode input pulse length p wopt = 125 ns, 4 mbit/s t pw 110 140 ns rxd pulse width of output signal, 50 %, fir mode input pulse length p wopt = 250 ns, 4 mbit/s t pw 225 275 ns rxd output jitter, leading edge input irradiance = 150 mw/m 2 , 4 mbit/s 1.152 mbit/s 115.2 kbit/s 20 40 350 ns ns ns receiver start up time after completion of shutdown programming sequence power on delay 500 s latency *) t l 100 s
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 263 optoelectronic charact eristics, continued t amb = 25 c, v cc = 2.4 v to 3.6 v unless otherwise noted. typical values are for design aid only, not guaranteed nor subject to production testing. parameter test conditions symbol min ty p. max unit ired operating current, switched current control for 3.3-v operation no external resistor is needed. i d 330 440 600 ma output leakage ired current v cc = v ired = 3.3 v, txd = low i ired - 1 1 a output radiant intensity, s. figure 3, recommended application circuit v cc = v ired = 3.3 v, = 0 txd = high, sd = low, r 1 = 1 i e 45 115 300 mw/sr output radiant intensity, s. figure 3, recommended application circuit v cc = v ired = 3.3 v, = 0, 15 txd = high, sd = low, r 1 = 1 i e 25 75 300 mw/sr output radiant intensity v cc1 = 3.6 v, = 0, 15 txd = low or sd = high (receiver is inac tive as long as sd = high) i e 0.04 mw/sr output radiant intensity, angle of half intensity 24 peak - emission wavelength p 88 0 900 nm optical rise time, optical fall time t ropt , t fopt 10 40 ns optical output pulse duration input pulse width 217 ns, 1.152 mbit/s t opt 200 217 230 ns optical output pulse duration input pulse width 125 ns, 4 mbit/s t opt 116 125 134 ns optical output pulse duration input pulse width 250 ns, 4 mbit/s t opt 241 250 259 ns optical output pulse duration input pulse width t < 8 0 s input pulse width t 8 0 s t opt t opt 20 t 8 5 s s optical overshoot 25 %
www.vishay.com 264 document number 8 4676 rev. 1.3, 21-feb-07 tfbs6711 vishay semiconductors recommended circuit diagram operated at a clean low impedance power supply the tfbs6711 needs no additional external components. however, depending on the entire system design and board layout, additional components may be required (see figure 3). the capacitor c1 is buffering the supply voltage and eliminates the inductance of the power supply line. this one should be a tantalum or other fast capacitor to guarantee the fast rise time of the ired current. vishay transceivers integrate a sensitive receiver and a built-in power driver. the combination of both needs a careful circuit board layout. the use of thin, long, resistive and inductive wiring should be avoided. the inputs (rxd, sd) and the output rxd should be directly (dc) coupled to the i/o circuit. the capacitor c2 co mbined with the resistor r2 is the low pass filter for smooth ing the supply voltage. r2, c1 and c2 are optional and dependent on the quality of the supply voltages v ccx and injected noise. an unstable power supply with dropping volt- age during transmission may reduce the sensitivity (and transmission range) of the transceiver. the placement of these parts is critical. it is strongly recommended to position c2 as close as possible to the transceiver power supply pins. a tantalum capacitor should be used for c1 while a ceramic capacitor is used for c2. in addition, when connecting the described circuit to the power supply, low impedance wiring should be used. when extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at v cc2 . often some power supplies are not able to follow the fast current rise time. in that case another 4.7 f (type, see table under c1) at v cc2 will be help- ful. keep in mind that basic rf-design rules for circuit design should be taken into account. especially longer signal lines should not be used without termi- nation. see e.g. "the art of electronics" paul horo- witz, winfield hill, 19 8 9, cambridge university press, isbn: 0521370957. table 1. recommended app lication circuit compo- nents i/o and software in the description, already different i/os are men- tioned. different combinations are tested and the function verified with the special drivers available from the i/o suppliers. in special cases refer to the i/ o manual, the vishay application notes, or contact directly vishay sales, marketing or application. figure 3. recommended application circuit ired anode v cc gro u nd sd txd rxd v cc2 v cc1 g n d s d t xd rxd r1 r2 c1 c2 c3 19299 component recommended value c1 4.7 f, 16 v vishay part#: 293d 475x9 016b c2 0.1 f, ceramic vishay part#: vj1206 y 104 j xxmt r1 3.3 v supply voltage : no resistor is necessary, the internal controller is able to control the current r2 4.7 , 0.125 w
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 265 mode switching the tfbs6711 is in the sir mode after power on as a default mode, therefore the fir data transfer rate has to be set by a programming sequence using the txd and sd inputs as described below. the low fre- quency mode covers speeds up to 115.2 kbit/s. sig- nals with higher data rates should be detected in the high frequency mode. lower frequency data can also be received in the high frequency mode but with reduced sensitivity. to switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required. setting to the high bandwidth mode (0.576 mbit/s to 4 mbit/s) 1. set sd input to logic "high". 2. set txd input to logic "high". wait t s 200 ns. 3. set sd to logic "low" (this negative edge latches state of txd, which determines speed setting). 4. after waiting t h 200 ns txd can be set to logic ?low?. the hold time of tx d is limited by the maxi- mum allowed pulse length. txd is now enabled as nor mal txd input for the high bandwidth mode. setting to the lower bandwidth mode (2.4 kbit/s to 115.2 kbit/s) 1. set sd input to logic "high". 2. set txd input to logic "low". wait t s 200 ns. 3. set sd to logic "low" (this negative edge latches state of txd, which determines speed setting). 4. txd must be held for t h 200 ns. txd is now enabled as normal txd input for the lower bandwidth mode. truth table figure 4. mode switching timing diagram txd sd t s t h 50 % high: fir low: sir 50 % 50 % 14 8 73 inputs outputs sd txd input irradiance mw/m 2 rxd transmitter high x x weakly pulled (500 k ) high 0 low high x low active (echo) i e low high > 8 0 s x high 0 low low < 4 high 0 low low > min. irradiance e e in angular range < max. irradiance e e in angular range low (active) 0 low low > max. irradiance e e in angular range x0
www.vishay.com 266 document number 8 4676 rev. 1.3, 21-feb-07 tfbs6711 vishay semiconductors recommended solder profiles solder profile for sn/pb soldering lead (pb)-free, recommended solder profile the tfbs6711 is a lead (pb)-free transceiver and qualified for lead (pb)-free processing. for lead (pb)-free solder paste like sn(3.0-4.0)ag(0.5-0.9)cu, there are two standard reflow profiles: ramp-soak- spike (rss) and ramp-to-spike (rts). the ramp- soak-spike profile was developed primarily for reflow ovens heated by infrared radiation. with widespread use of forced convection reflow ovens the ramp-to- spike profile is used increasingly. shown below in figure 6 is vishay's recommended profiles for use with the tfbs6711 transceivers. for more details please refer to application note: smd assembly instruction. wave soldering for tfduxxxx and tfbsxxxx transceiver devices wave soldering is not recommended. manual soldering manual soldering is the standard method for lab use. however, for a production process it cannot be rec- ommended because the risk of damage is highly dependent on the experience of the operator. never- theless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering. storage the storage and drying processes for all vishay transceivers (tfduxxxx and tfbsxxx) are equiva- lent to msl4. the data for the drying procedure is given on labels on the packing and also in the application note "taping, labeling, storage and packing" (http://www.vishay.com/docs/ 8 2601/ 8 2601.pdf). figure 5. recommended solder pr ofile for sn/pb soldering 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 50 100 150 200 250 300 350 time/s temperat u re/c 2...4 c/s 2...4 c/s 10 s max. at 230 c 120 s...180 s 160 c max. 240 c max. 90 s max. 19431 figure 6. solder profile, rss recommendation 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 0 50 100 150 200 250 300 350 time/s temperat u re/c 20 s 2 c...4 c/s 2 c...4 c/s 90 s...120 s t 217 c for 50 s max t peak = 260 c max. 50 s max. t 255 c for 20 s max 19261
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 267 tfbs4711, tfbs5711, tfbs 6711, and tfbs6712 package (mechanical dimensions) soldering footprint: side view soldering footprint: top view design rules for optical windows for optical windows see the application no te on the web http ://www.vishay.com/docs/ 8 2506/ 8 2506.pdf. figure 7. package drawing, tolerances: height + 0.1, - 0.2 mm, otherwise 0.2 mm if not indicated 19612 1972 8 19301 figure 8 . soldering footprints
www.vishay.com 26 8 document number 8 4676 rev. 1.3, 21-feb-07 tfbs6711 vishay semiconductors drawing-no.: 9.700-5294.01-4 issue: prel. copy; 24.11.04 14017 dra w ing- n o.: 9.800-5090.01-4 iss u e: 1; 29.11.05 tape width a max. n w 1 min. w 2 max. w 3 min. w 3 max. mm mm mm mm mm mm mm 16 330 50 16.4 22.4 15.9 19.4 figure 9. reel dimensions [mm] figure 10. tape dimensions [mm] tfbs6711-tt3 19303
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 269 drawing-no.: 9.700-5295.01-4 issue: prel. copy; 24.11.04 figure 11. tape dimensions [mm] tfbs6711-tr3 19304
tfbs6711 document number 8 4676 rev. 1.3, 21-feb-07 vishay semiconductors www.vishay.com 270 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (19 8 7) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88 /540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

▲Up To Search▲

Price & Availability of TFBS6711-TR1

	To Download TFBS6711-TR1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .