1 power transistors 2sb1554 silicon pnp epitaxial planar type for power amplification n features l high forward current transfer ratio h fe which has satisfactory linearity l allowing automatic insertion with radial taping n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current base current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c i b p c t j t stg ratings C60 C60 C20 C8 C4 C2 15 2 150 C55 to +150 unit v v v a a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe1 * h fe2 v ce(sat) v be(sat) f t t on t stg t f conditions v cb = C60v, i e = 0 v ce = C50v, i b = 0 v eb = C15v, i c = 0 i c = C10ma, i b = 0 v ce = C4v, i c = C 0.8a v ce = C4v, i c = C2a i c = C2a, i b = C100ma i c = C2a, i b = C100ma v ce = C10v, i c = C 0.5a, f = 1mhz i c = C2a, i b1 = C100ma, i b2 = 100ma, v cc = C50v min C60 80 30 typ 25 0.4 0.6 0.25 max C10 C50 C10 400 C1.0 C1.5 unit m a m a m a v v v mhz m s m s m s t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter mt4 type package 1.0 10.0 0.2 0.55 0.1 2.5 0.2 2.5 0.2 4.2 0.2 13.0 0.2 2.5 0.2 18.0 0.5 solder dip 5.0 0.1 2.25 0.2 1.2 0.1 0.65 0.1 0.55 0.1 c1.0 90 c1.0 123 1.05 0.1 0.35 0.1 * h fe1 rank classification rank q p o h fe1 80 to 160 120 to 240 200 to 400
2 power transistors 2sb1554 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?6 ? ?2 ? ?4 ? ?0 ? 0 ?.0 ?.0 ?.0 ?.5 ?.5 ?.0 ?0.5 ?.5 t c =25?c ?5ma ?0ma ?5ma ?0ma ?5ma ?0ma ?5ma ?0ma ?ma i b =?0ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =20 25?c t c =100?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =20 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.001 ?0.01 ?0.1 ? ?0 1 10 10 2 10 3 10 5 10 4 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =?0v f=1mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 1 10 10 2 10 3 10 4 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 5 ? ? ? ? 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t f t on pulsed t w =1ms duty cycle=1% i c /i b =20 (? b1 =i b2 ) v cc =?0v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i cp i c 10ms t=1ms non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sb1554 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 (1) (2) note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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