power transistors 67 2sa0794, 2sa0794a (2sa794, 2sa794a) silicon pnp epitaxial planar type for low-frequency output driver complementary to 2sc1567 and 2sc1567a features ? high collector to emitter voltage v ceo ? optimum for the driver stage of low-frequency and 40 w to 100 w output amplifier ? to-126b package which requires no insulation plate for installa- tion to the heat sink absolute maximum ratings t c = 25 c 1: emitter 2: collector 3: base to-126b-a1 package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sa0794 v cbo ? 100 v voltage 2sa0794a ? 120 collector to 2sa0794 v ceo ? 100 v emitter voltage 2sa0794a ? 120 emitter to base voltage v ebo ? 5v peak collector current i cp ? 1a collector current i c ? 0.5 a collector power dissipation p c 1.2 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector to emitter 2sa0794 v ceo i c = ? 100 a, i b = 0 ? 100 v voltage 2sa0794a ? 120 emitter to base voltage v ebo i e = ? 1 a, i c = 0 ? 5v forward current transfer ratio h fe1 * v ce = ? 10 v, i c = ? 150 ma 90 160 220 h fe2 v ce = ? 5 v, i c = ? 500 ma 50 100 collector to emitter saturation voltage v ce(sat) i c = ? 500 ma, i b = ? 50 ma ? 0.2 ? 0.4 v base to emitter saturation voltage v be(sat) i c = ? 500 ma, i b = ? 50 ma ? 0.85 ? 1.2 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 120 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 20 30 pf note) * : rank classification rank q r h fe1 90 to 155 130 to 220 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 note.) the part numbers in the parenthesis show conventional part number.
power transistors 68 10 3000 1000 300 100 30 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 1 v ce = ? 10v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0 0 1.0 0.8 0.6 0.4 0.2 0.6 0.5 0.4 0.3 0.2 0.1 v ce = 10v ta=125 ? c 25 ? c 75 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0 6 5 4 3 2 1 180 140 100 60 20 0 40 80 120 160 (1)with a 100 ? c ) collector power dissipation p c ( w ) 2sa0794, 2sa0794a 0 0 12 2 10 4 8 6 1.2 1.0 0.8 0.6 0.4 0.2 t c =25 ? c i b = 20ma 2ma 4ma 6ma 8ma 18ma 10ma 12ma 16ma 14ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 0 4 8 12 2 6 14 10 1.2 1.0 0.8 0.6 0.4 0.2 v ce = 10v t c =25 ? c base current i b ( ma ) collector current i c ( a ) p c ? ? ? 0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 i c /i b =10 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.01 0.03 0.1 0.3 1 3 0.03 0.1 1 0.3 i c /i b =10 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) i c ? ? ? 10v f=200mhz t c =25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 50 40 30 20 10 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) h fe ? ? ?
power transistors 69 2sa0794, 2sa0794a 1 10 10 2 10 3 10 5 10 4 0 200 160 120 80 40 180 140 100 60 20 v ce = 20v ambient temperature t a ( ? c ) i ceo ( t a ) i ceo ( t a =25 ? c ) 1 10 10 2 10 3 10 4 0 160 40 120 80 140 20 100 60 v cb = 20v ambient temperature t a ( ? c ) i cbo ( t a ) i cbo ( t a =25 ? c ) 0.001 0.003 1 3 0.01 0.03 0.1 0.3 1 3 10 10 30 100 300 1000 single pulse t c =25 ? c t=10ms t=1s i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a ) i ceo ? ?
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