triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 1 high power ka-band absorptive spdt switch TGS4304 key features and performance ? 32 - 40 ghz frequency range ? > 33 dbm input p1db @ v c = +10v ? on chip biasing resistors ? on chip dc blocks ? < 1.0 db midban d insertion loss ? < 4ns switching speed ? vpin technology ? chip dimensions: 1.58 x 1.10 x 0.10 mm (0.043 x 0.062 x 0.004 inches) description the triquint TGS4304 is a gaas absorptive single-p ole, double-throw (spdt) pin monolithic switch designed to operate over t he ka-band frequency range. this switch maintains a low insertion loss with high power handling of 33dbm or greater input p1db at v c = +10v. these advantages, along with the small size of the chip, make the TGS4304 ideal for us e in communication and transmit/receive applications. the TGS4304 is 100% dc & rf tested on-wafer to ensur e performance compliance. lead free and rohs compliant. primary applications ? ka-band transmit / receive ? point-to-point radio ? point-to-multipoint radio note: this device is early in the characterization process prio r to finalizing all electrical test specifications. specificatio ns are subject to change without notice. measured data v a = +5v, i a 0ma, v b = -4v, i b = 30ma -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 32 33 34 35 36 37 38 39 40 frequency (ghz) s21 (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 s11,s22 (db) s21 s11 s22
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 2 table i maximum ratings symbol parameter 1/ value notes v c control voltage -5v to +25v 2/ i c control current 34 ma 2/ p in input continuous wave power 35 dbm t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operable values for this device. 2 / v c and i c are per bias pad. 3 / operation above 30dbm requires control voltages above +7.5v. TGS4304 table ii rf characterization table (t a = 25 c, nominal) (v a = +5v, i a = 0ma, v b = -4v, i b = 30ma) symbol parameter test conditions typ units notes il insertion loss f = 32 ? 34 ghz f = 34 ? 37 ghz f = 37 ? 40 ghz 1.3 0.9 1.3 db rl return loss f = 32 ? 40 ghz 10 db p1db output power @ 1db gain compression v c = +5 v v c = +7.5 v vc = +10 v v c = +20 v 31 33 34 34.5 dbm 1 / note: table ii lists the rf characteristics of typical devices as determined by fixtured measurements. 1 / frequency = 30ghz
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 3 TGS4304 table iii truth table selected rf output v a v b rf out a +5v @ ~0ma -4v @ 30ma rf out b -4v @ 30ma +5v @ ~0ma selected rf output i a i b rf out a +5v @ ~0ma 30ma rf out b 30ma +5v @ ~0ma operation at rf power leve ls >30 dbm requires in creasing the positive voltage level to put a l arger reverse bias on the di odes while the negative voltage level remains at -4v with a current of approxi mately 30ma. if you are using -5v, use al ternate assembly with off chip resistors. bond pads ia and ib bypass the on-chip series resist ors to allow adjustment of the current to the diodes in their forward biased state.
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 4 TGS4304 measured performance on state off state -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 frequency (ghz) s21 (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 s11,s22 (db) s21 s11 s22 -80 -70 -60 -50 -40 -30 -20 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 frequency (ghz) s31 (db) -30 -20 -10 0 10 20 30 s11,s33 (db) s31 s11 s33
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 5 -3 -2.5 -2 -1.5 -1 -0.5 18 20 22 24 26 28 30 32 34 36 pin (dbm) gain (db) va=20 v va=15 v va=10 v va=7.5 v va=5 v measured performance 30 ghz |ib| = 30 ma
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 6 TGS4304 measured performance on state measurements include connecto r / fixture losses of ~ 1db off state -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 frequency (ghz) s31 (db) -40c +24c +85c -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 frequency (ghz) s21 (db) -40c +24c +85c
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 7 mechanical drawing TGS4304 units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pad #1 (rf in) 0.15 x 0.10 (0.006 x 0.004) bond pad #2 (rf out a) 0.10 x 0.15 (0.004 x 0.006) bond pad #3 (va) 0.10 x 0.10 (0.004 x 0.004) bond pad #4 (ia) 0.15 x 0.10 (0.006 x 0.004) bond pad #5 (ib) 0.15 x 0.10 (0.006 x 0.004) bond pad #6 (vb) 0.10 x 0.10 (0.004 x 0.004) bond pad #7 (rf out b) 0.10 x 0.15 (0.004 x 0.006) 0.00 [0.000] 0.10 [0.004] 0.79 [0.031] 0.49 [0.019] 0.34 [0.013] 1.09 [0.043] 1.24 [0.049] 1.48 [0.058] 1.58 [0.062] 0.00 [0.000] 0.10 [0.004] 0.45 [0.018] 1.00 [0.039] 1.10 [0.043] 1 2 3 4 5 6 7
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 8 chip assembly & bonding diagram gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. TGS4304 rf input rf output a rf output b va vb
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 9 alternate chip assembly & bonding diagram TGS4304 rf input rf output a rf output b va vb r r table iv bias resistor values maximum negative bias voltage r -5v 33 ohms -7.5v 117 ohms -10v 200 ohms -15v 367 ohms -20v 533 ohms
triquint semiconductor texas phone: ( 972)994-8465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com may 2, 2008 10 gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes TGS4304
|
