? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 20a i d90 t c = 90 c 14a i d(rms) package lead current limit 45 a e as i o = 10a, t c = 25 c 690 mj e ar i o = 20a 0.5 mj dv/dt v ds < v dss , i f 17 a, t vj = 150 c 6 v/ns d ir /dt = 100 a/ s p d t c = 25 c 140 w t j -55 ... +150 c t jm 150 c t stg -55 ... +125 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol rms leads-to-tab, 50/60 hz, t = 1 minute 2500 v~ f c mounting force 11 ... 65 / 2.4 ...11 n/lb weight 3 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = i d90 , note 1 136 150 m ? v gs = 10 v, i d = i d90 , note 1 t j = 125 c 280 m ? v gs(th) v ds = v gs , i d = 2 ma 2 4 v i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c10 a i gss v gs = 20 v dc , v ds = 0 200 na g = gate, d = drain, s = source v dss = 800 v i d25 = 20 a r ds(on) = 150 m ? ? ? ? ? ds98866c(02/04) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z 3 rd generation coolmos power mosfet - high blocking capability - low on resistance - avalanche rated for unclamped inductive switching (uis) z low thermal resistance due to reduced chip thickness z low drain to tab capacitance(<30pf) applications z switched mode power supplies (smps) z uninterruptible power supplies (ups) z power factor correction (pfc) z welding z inductive heating advantages z easy assembly: no screws or isolation foils required z space savings z high power density power mosfet isoplus220 tm electrically isolated back surface low r ds(on) , high voltage, coolmos tm superjunction mosfet preliminary data sheet ixkc 25n80c coolmos is a trademark of infineon technology. isoplus220 tm g d s e153432
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions ch aracteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 0.5 ? i d90 , pulse test 14 20 s c iss 4600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2500 pf c rss 120 pf q g(on) 180 nc q gs v gs = 10 v, v ds = 640 v, i d = i d90 20 nc q gd 80 nc t d(on) 25 ns t r v gs = 10 v, v ds = 640v 25 ns t d(off) i d = 35 a, r g = 2.2 ? 75 ns t f 10 ns r thjc 0.9 k/w r thch 0.30 k/w reverse conduction characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = 12.5 a, v gs = 0 v 1 1.2 v note 1 note: 1. pulse test, t 300 s, duty cycle d 2 % ixkc 25n80c isoplus220 outline
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 0 3 6 9 12 15 18 21 24 27 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v t p = 300s fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 01 234 567 89 v d s - volts i d - amperes v gs = 10v 8v 7v 4v 4.5v t p = 300s 5v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 4v 4.5v t p = 300s 5v fig. 4. r ds(on) norm alized to 0.5 i d90 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 28a i d = 14a v gs = 10v t p = 300s fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d90 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 0 10 20304050 607080 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v t p = 300s ixkc 25n80c
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 11. capacitance 10 100 1000 10000 100000 0 102030405060708090100 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v g s - volts v ds = 640v i d = 14a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 33.5 44.5 55.5 6 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 4 8 12 16 20 24 28 32 36 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 5 10 15 20 25 30 35 40 45 50 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. maxim um transient therm al resistance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w ixkc 25n80c
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