1/7 www.dynexsemi.com DNB65 features double side cooling high surge capability applications rectification freewheel diode dc motor control power supplies welding battery chargers voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table, e.g.: DNB65 40 note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. DNB65 recifier diode replaces january 2000 version, ds4175-2.0 ds4175-3.0 august 2001 4500 4400 4200 4000 3800 3600 DNB65 45 DNB65 44 DNB65 42 DNB65 40 DNB65 38 DNB65 36 conditions v rsm = v rrm + 100v lower voltage grades available. type number repetitive peak reverse voltage v rrm v key parameters v rrm 4500v i f(av) 2590a i fsm 31000a outline type code: do200ad see package details for further information. fig. 1 package outline
2/7 www.dynexsemi.com DNB65 symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load, t case = 100 o c 2000 a t case = 100 o c 3140 a t case = 100 o c 2800 a half wave resistive load, t case = 100 o c 1284 a t case = 100 o c 2017 a t case = 100 o c 1715 a current ratings t case = 75 o c unless otherwise stated symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 2590 a - 4068 a - 3727 a half wave resistive load 1940 a - 3047 a - 2656 a t case = 100 o c unless otherwise stated
3/7 www.dynexsemi.com DNB65 surge ratings conditions 10ms half sine; t case = 150 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 150 o c v r = 0 max. units symbol parameter i fsm surge (non-repetitive) forward current i 2 ti 2 t for fusing i fsm surge (non-repetitive) forward current i 2 t i 2 t for fusing 4.8 x 10 6 a 2 s 31.0 ka 3.075 x 10 6 a 2 s 24.8 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.025 anode dc clamping force 45.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.003 double side - t vj virtual junction temperature t stg storage temperature range single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter ?5 175 o c forward (conducting) - o c - 0.006 o c/w o c/w cathode dc - 0.027 o c/w double side cooled - 0.013 o c/w clamping force 40.0 48.0 kn 150 reverse (blocking) - o c 150
4/7 www.dynexsemi.com DNB65 characteristics forward voltage peak reverse current parameter c - q s total stored charge symbol v fm i rrm i rm peak recovery current - 500 a 6000 at v rrm , t case = 150 o c - 150 ma - 1.45 v at 3000a peak, t case = 25 o c conditions typ. max. units at t vj = 150?c - v to threshold voltage r t slope resistance 0.19 m ? at t vj = 150?c - 0.84 v t rr reverse recovery time 25 - s i f = 1500a, di rr /dt = 25a/ s t case = 25?c, v r = 100v curves fig.2 maximum (limit) forward characteristics fig.3 dissipation curves v fm equation:- v fm = a + bln (i f ) + c.i f +d. i f where a = ?.36984 b = 0.292197 c = 0.000354 d = ?.03111 these values are valid for t j = 125?c for i f 500a to 10000a 01.02.03.0 instantaneous forward voltage, v f - (v) 0 2000 4000 6000 8000 10000 instantaneous forward current, i f - (a) measured under pulse conditions t j = 150 ? c t j = 25 ? c 0 2000 4000 6000 mean forward current, i f(av) - (a) 0 2000 4000 6000 8000 10000 mean power dissipation - (w) dc half wave 3 phase 6 phase
5/7 www.dynexsemi.com DNB65 fig.5 maximum (limit) transient thermal impedance - junction to case fig.4 surge (non-repetitive) forward current vs time at t case 150?c) 1101235102050 0 10 20 30 40 50 60 i 2 t value - (a 2 s x 10 6 ) ms cycles at 50hz duration peak half sine forward current - (ka) i 2 t = 2 x t 2 1 2 3 4 5 6 i 2 t v r = 0 v r = 50% v rrm 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - ( ? c/w) double side cooled anode side cooled 100 conduction d.c. halfwave 3 phase 120 ? 6 phase 60 ? effective thermal resistance junction to case ? c/w double side 0.0130 0.0141 0.0170 0.0200 anode side 0.0210 0.0221 0.0250 0.0280
6/7 www.dynexsemi.com DNB65 63nom 92 max hole 3.6 x 2.0 deep (one in each electrode) 102 max 63nom nominal weight: 1100g clamping force: 45kn 10% package outine type code: do200ad package details for further package information, please contact your nearest customer service centre. all dimensions in mm, unless stated other wise. do not scale. note: 1. package maybe supplied with pins and/or tags.
7/7 www.dynexsemi.com DNB65 t 22mm clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. please refer to our application note on device clamping, an4839 heatsinks power assembly has its own proprietary range of extruded aluminium heatsinks. they have been designed to optimise the performa nce or our semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on reque st. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or custome r services. customer service centres mainland europe tel: +33 (0)1 58 04 91 00. fax: +33 (0)1 46 38 51 33 north america tel: (613) 723-7035. fax: (613) 723-1518. uk, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices mainland europe tel: +33 (0)1 58 04 91 00. fax: +33 (0)1 46 38 51 33 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (949) 733-3005. fax: (949) 733-2986. uk, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2001 publication no. ds4175-3 issue no. 3.0 august 2001 technical documentation not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. 99 bank street, suite 410, ottawa, ontario, canada, k1p 6b9 tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning p ossible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the p erformance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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