for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 1 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz e le ctrical specifcations, t a = +25 c , s ee t e st c on ditions p a rameter condition min. t y p. max. u n its i n sertion l o ss 20 - 27 3 3.5 db 27 - 35 3 4 db 35 - 50 3.5 4.5 db a t tenuation r a nge 20 - 27 25 30 db 27 - 35 30 35 db 35 - 50 35 40 db i n put r e turn l o ss 13 db o u tput r e turn l o ss 13 db i n put t h ird o r der i n tercept (two-tone input p o wer = 10 dbm e a ch t o ne) [1] 33 dbm [1] vc t r 2 = -3, vc t r 1 = -2.0 worst case functional diagram features wide bandwidth: 20 - 50 gh z e x cellent l i nearity: +32 db i n put ip 3 w ide a t tenuation r a nge: 35 db die s i ze: 2.78 x 1.37 x 0.1 mm t y pical a ppl ications t h e h m c985 is ideal for: ? p o int-to- p o int r a dio ? v s at r a dio ? t e st i n strumentation ? microwave s e nsors ? military, e c m & r a dar general description t h e h m c985 is an absorptive voltage variable a t tenuator (vv a ) which operates from 20 - 50 g h z and is ideal in designs where an analog dc control signal must be used to control r f signal levels over a 35 db dynamic range. i t features two shunt-type attenuators which are controlled by two analog voltages, vctrl1 and vctrl2. o p timum linearity performance of the attenuator is achieved by frst varying vctrl1 of the frst attenuation stage from -3v to 0v with vctrl2 fxed at -3v. t h e control voltage of the second attenuation stage, vctrl2, should then be varied from -3v to 0v with vctrl1 fxed at 0v. h o wever, if the vctrl1 and vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input i p 3 performance. a p plications include a g c c ircuits and temperature compensation of multiple gain stages in microwave point to point and v s at radios.
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 2 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz a t tenuation vs. frequency over v c ntl = v ar iable, v c ntrl2 = -3 v a t tenuation vs. frequency over v c ntl1 = 0 v , v c trl2 = v ar iable a t tenuation vs. v c nrl1 o v er t e mperature @ 30 ghz, v c trl2 = -3 v a t tenuation vs. v c ntrl2 o v er t e mperature @ 30 ghz, v c trl1 = 0 v a t tenuation vs. pin @ 30 ghz v c trl1 = v ar iable, v c trl2 = -3 v a t tenuation vs. pin @ 30 ghz v c trl2 = v ar iable, v c trl1 = 0 v -25 -20 -15 -10 -5 0 20 25 30 35 40 45 50 -2.4v -2.0v -1.6v -1.2v -0.8v -0.4v 0.0v attenuation (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -2.0v -1.6v -1.2v -0.8v -0.4v 0.0v attenuation (db) frequency (ghz) -15 -12 -9 -6 -3 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 +25c +85c -55c attenuation (db) vctrl1 (v) -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 +25c +85c -55c attenuation (db) vctrl1 (v) -24 -20 -16 -12 -8 -4 0 0 3 6 9 12 15 18 21 24 -2.4 v -2.0 v -1.6v -1.2v -0.8 v -0.4v 0.0 v attenuation (db) input power (dbm) -50 -40 -30 -20 -10 0 0 3 6 9 12 15 18 21 24 -2.4 v -2.0 v -1.6v -1.2v -0.8 v -0.4v 0.0 v attenuation (db) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 3 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz [1] worst case i p 3 i n put r et urn l os s v c trl1 = v ar iable, v c trl2 = -3 v i n put r et urn l os s v c trl1 = 0 v , v c trl2 = v ar iable o u tput r et urn l os s v c trl1 = v ar iable, v c trl2 = -3 v o u tput r et urn l os s v c trl1 = 0 v , v c trl2 = v ar iable i n put i p 3 vs. i n put power @ 30 ghz v c trl1 = v ar iable, v c trl2 = -3 v i n put i p 3 vs. i n put power @ 30 ghz v c trl1 = -2 v , v c trl2 = -3 v [1] -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -1.2v 0.0v return loss (db) frequency (ghz) -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -1.2v 0.0v return loss (db) frequency (ghz) -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -1.2v 0.0v return loss (db) frequency (ghz) -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -1.2v 0.0v return loss (db) frequency (ghz) 10 20 30 40 50 60 0 4 8 12 16 20 -2.4v -2.0v -1.6v -1.2v -0.8v -0.4v 0.0v ip3 (dbm) single tone input power (dbm) 30 32 34 36 38 40 0 2 4 6 8 10 12 14 16 18 20 20 ghz 30 ghz 40 ghz ip3 (dbm) single tone input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 4 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz i n put i p 3 vs. i n put power o v er t e mperature @ 30 ghz, v c trl1 = -2 v , v c trl2 = -3 v [1] i n put i p 3 vs. i n put power @ 30 ghz v c trl2 = v ar iable, v c trl1 = 0 v i n put i p 3 vs. i n put power o v er frequency v c trl2 = -2 v , v c trl1 = 0 v [1] i n put i p 3 vs i n put power over t e mpera- ture @ 30 ghz, v c trl2 = -2 v , v c trl1 = 0 v [1] [1] worst case i p 3 30 32 34 36 38 40 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c ip3 (dbm) single tone input power (dbm) 10 20 30 40 50 60 0 4 8 12 16 20 -2.4v -2.0v -1.6v -1.2v -0.8v -0.4v 0.0v ip3 (dbm) single tone input power (dbm) 35 37 39 41 43 45 0 2 4 6 8 10 12 14 16 18 20 20 ghz 30 ghz 40 ghz ip3 (dbm) single tone input power (dbm) 35 37 39 41 43 45 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c ip3 (dbm) single tone input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 5 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz a t tenuation vs frequency o v er v c trl v c tr l1 = v c trl2 a t tenuation vs. v c trl o v er t e mperature @ 35 ghz, v c trl1 = v c trl2 a t tenuation vs. pin @ 30 ghz o v er v c trl v c trl1 = v c trl2 i n put r et urn l os s, v c trl1 = v c trl2 o u tput r et urn l os s, v c trl1 = v c trl2 i n put i p 3 vs. i n put power o v er v c trl @ 30 ghz, v c trl1 = v c trl2 -70 -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -2.0v -1.6v -1.2v -0.8v -0.4v 0.0v attenuation (db) frequency (ghz) -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 +25c +85c -55c attenuation (db) vctrl1 (v) -60 -50 -40 -30 -20 -10 0 0 3 6 9 12 15 18 21 24 -2.4 v -2.0 v -1.6v -1.2v -0.8 v -0.4v 0.0 v attenuation (db) input power (dbm) -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -1.2v 0.0v return loss (db) frequency (ghz) -40 -30 -20 -10 0 20 25 30 35 40 45 50 -2.4v -1.2v 0.0v return loss (db) frequency (ghz) 10 20 30 40 50 60 0 4 8 12 16 20 -2.4v -2.0v -1.6v -1.2v -0.8v -0.4v 0.0v ip3 (dbm) single tone input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 6 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz i n put i p 3 vs. i n put power o v er frequency v c trl1 = v c trl2 i n put i p 3 vs. i n put power o v er t e mperature @ 30 ghz v c trl1 = v c trl2 25 27 29 31 33 35 0 2 4 6 8 10 12 14 16 18 20 20 ghz 30 ghz 40 ghz ip3 (dbm) single tone input power (dbm) 25 27 29 31 33 35 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c ip3 (dbm) single tone input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 7 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz o u tline drawing a b solute m a ximum r a tings control voltage +1 to -5v i n put r f p o wer 30 dbm maximum junction t e mperature 165 c t h ermal r e sistance ( r th ) (junction to ground paddle) 62 c/w o p erating t e mperature -40c to +85c s t orage t e mperature -65c to 125c die packaging i n formation [1] s t andard a l ternate g p - 1 ( g e l p a ck) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. notes : 1 . all d i m e nsions are in in c h es [mm] 2. d i e thi c k n ess is .004 3. t y p i c a l b o n d pa d is 0.0026 [0.066] s q u are 4. b a c k s i d e m e talli z a tion : gol d 5 . b o n d pa d m e talli z a tion : gol d 6 . b a c k s i d e m e tal is groun d . 7. c o nne c t ion not re q u ire d f o r unla b e le d b o n d pa d s . 8 . ov e rall d i e si z e .002 ele c t rostati c sensiti v e d e v i c e o b s er v e han d l ing pre c a utions
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 8 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz a s sembly diagram pad descriptions p a d n u mber function description p i n s c hematic 1 r f i n t h is pad is dc coupled and matched to 50 o h ms 2 r f o ut t h is pad is dc coupled and matched to 50 o h ms 3 vctrl1 control voltage 1 4 vctrl2 control voltage 2 die bottom g n d d ie bottom must be connected to r f /dc ground
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 9 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz m oun ting & b on ding t e chniques for m i llimeterwave ga a s mmic s t h e die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general h a ndling, mounting, bonding n o te). 50 o h m microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin flm substrates are recommended for bringing r f to and from the chip (figure 1). i f 0.254 mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o n e way to accom- plish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. t y pical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: a l l bare die are placed in either waffle or g e l based e s d protec- tive containers, and then sealed in an e s d protective bag for shipment. o n ce the sealed e s d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h a ndle the chips in a clean environment. d o n ot attempt to clean the chip using liquid cleaning systems. static sensitivity: follow e s d precautions to protect against > 250v e s d s trikes. transients: s u ppress instrument and bias supply transients while bias is applied. u s e shielded signal and bias cables to minimize inductive pick- up. general handling: h a ndle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t h e surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. m oun ting t h e chip is back-metallized and can be die mounted with a u s n eutectic preforms or with electrically conductive epoxy. t h e mounting surface should be clean and fat. e u tectic die a t tach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o n ot expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e p oxy die a t tach: a p ply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire b on ding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. t h ermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. u s e the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. a l l bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuators - analog - chip 0 0 - 10 HMC985 v00.0211 gaas mmic volta g e - variable attenuator, 20 - 50 ghz n o tes:
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