date name drawn checked revisions approved dwg.no. fuji electric co.,ltd. this material and the information herein is the property of fuji electric co.,ltd. they shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of fuji electric co.,ltd. ma4le mt5f12592 1/1 sep.-03-'02 sep.-03-'02 fuji power mosfet superfap-g series target specification preliminary 1) package to-247 2) absolute maximum ratings (tc=25 ???@ unless otherwise specified) items units drain-source voltage v continuous drain current a pulsed drain current a gate-source voltage v non-repetitive maximum avalanche curent repetitive maximum avalanche curent non-repetitive *1 maximum avalanche energy maximum drain-source dv/dt dv ds /dt kv/us peak diode recovery dv/dt dv/dt kv/us *2 w w operating and storage ?? temperature range ?? 3)electrical characteristics (tch=25 ?? unless otherwise specified) items symbols test conditions min. typ. max. units drain-source breakdown voltage bv dss i d =250 a v gs =0v 500 --- --- v gate threshold voltage v gs (th) i d =250 a v ds =v gs 3.0 --- 5.0 v v ds =600v t ch =25 ?? --- --- 25 a v gs =0v t ch =125 ?? --- --- 250 a gate-source leakage current i gss v gs =30v v ds =0v --- --- 100 a input capacitance c iss v ds =25v --- 5260 7890 output capacitance c oss v gs =0v --- 685 1030 pf reverse transfer capacitance c rss f=1mhz --- 65 100 total gate char g eq g vcc=300v --- 118 177 gate to source charge qgs i d =43a --- 39 59 nc gate to drain (miller) charge qgd v gs =10v --- 42 63 avalanche capab ility i av l=802 h tch=25 ?? 43 --- --- a diode forward on-voltage v sd i f =43a,vgs=0v,tch=25 ?? --- 1.00 1.50 v 4) thermal characteristics items symbols test conditions min. typ. max. units channel to case rth ( ch-c ) 0.2083 c/w channel to ambient rth(ch-a) 50.0 c/w *1 l=802 -i d ,-di/dt=50a/ s,vcc bv dss ,tch 150 c a e as 808.9 mj i ar 2SK3681-01 (600v/0.16 ? /43a) v gs 30 ratings 600 43 i as 43 symbols v ds i d i d(pulse) 172 maximum power dissipation p d @ta=25 ?? p d ?@???s c=25 ?? t stg 600 2.50 150 -55 ?` +150 ? --- 0.16 20 5 a 21.5 zero gate voltage drain current drain-source on-state resistance vgs=10v --- i dss r ds (on) i d =21.5a t ch
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