tc0640h thru TC3500H features oxide glass passivated junction bidirectional protection in a single device surge capabilities up to 100a @ 10/1000us or 400 @ 8/20us high off state impedance and low on state voltage plastic material has ul flammability classification 94v-0 mechanical data case : molded plastic polarity : denotes none cathode band weight : 0.093 grams surface mount thyristor surge protective device vdrm - 58 to 320 volts ipp - 100 amperes maximum ratings maximum rated surge waveform waveform thermal resistance /w unit symbol %/ junction to leads characteristics typical positive temperature coefficient for brekdown voltage rth (j-l) v br / t j 0.1 value 20 100 junction to ambient on print circuit (on recommended pad layout) rth (j-a) /w 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us standard gr-1089-core iec 61000-4-5 fcc part 68 itu-t k20/21 fcc part 68 gr-1089-core i pp (a) 500 400 250 200 160 100 i pp , peak pulse current (%) 100 50 0 tr tp time half value peak value (ipp) tr= rise time to peak value tp= decay time to half value semiconductor lite-on bi-directional unit symbol non-repetitive peak impulse current @ 10/1000us characteristics storage temperature range i pp i tsm t stg a a -55 to +150 value 100 50 non-repetitive peak on-state current @ 8.3ms (one half cycle) junction temperature range t j -40 to +150 rev. 0, 03-dec-2001, kswc02 smc all dimensions in millimeter smc dim. min. max. a c d e f g h b 6.60 7.11 6.22 5.59 2.92 3.18 0.31 0.15 7.75 8.13 0.05 0.20 2.01 2.62 0.76 1.52 c h e f g d b a
symbol v drm i drm v br i br v bo i bo parameter stand-off voltage leakage current at stand-off voltage breakdown voltage breakdown current breakover voltage holding current note: 1 i h v t i pp c o on state voltage peak pulse current off state capacitance note: 2 breakover current v drm i drm v br i br v bo i bo i h v t i pp v i notes: 1. i h > (v l /r l ) if this criterion is not obeyed, the t spd triggers but does not return correctly to high-resistance state. the surge recovery time does not exceed 30ms. 2. off-state capacitance measured at f=1.0mhz; 1.0v rms signal; vr=2v dc bias. tc0640h tc0720h 75 58 65 tc0900h tc1100h tc1300h tc1500h tc1800h tc2300h tc2600h tc3100h TC3500H 140 90 120 220 160 190 275 320 5 5 5 5 5 5 5 5 5 5 5 98 77 88 180 130 160 300 220 265 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 150 150 150 150 150 150 150 150 150 150 150 200 200 200 120 120 120 80 120 80 80 80 50 50 50 50 50 50 50 50 50 50 50 max parameter symbol units limit rated repetitive off-state voltage off-state leakage current @ v drm breakover voltage on-state voltage @ i t =1.0a holding current off-state capacitance max max max min max min typ v drm i drm v bo v t i bo -i bo+ i h- co volts ua volts volts ma ma ma pf electrical characteristics @ t a= 25 unless otherwise specified tc0640h thru TC3500H breakover current 800 800 800 800 800 800 800 800 800 800 800 max i h+ ma 800 800 800 800 800 800 800 800 800 800 800 rev. 0, 03-dec-2001, kswc02
fig.1 - off state current vs junction temperature i( drm) , off state current (ua) t j , junction temperature ( ) v drm =50v 100 10 1.0 0.1 0.001 0.01 -25 0 25 50 75 100 125 150 t j , junction temperature ( ) -50 -25 0 25 50 75 125 150 normalized breakdown voltage 1.20 1.10 1.05 1.0 0.90 0.95 1.15 v br (t j ) v br (t j =25 ) 100 175 fig. 2 - relative variation of breakdown voltage vs junction temperature t j , junction temperature ( ) -50 -25 0 25 50 75 125 150 normalized breakover voltage 1.10 1.05 1.0 0.95 100 175 fig. 3 - relative variation of breakover voltage vs junction temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 5.0 v (t); on state voltage i (t) , on state current fig. 4 - on state current vs on state voltage 1.0 10 100 t j =25 t j , junction temperature ( ) normalized holding current fig. 5 - relative variation of holding current vs junction temperature vr, reverse voltage normalize capacitance fig. 6 - relative variation of junction capacitance vs reverse voltage bias rating and characteristics curves tc0640h thru TC3500H -50 -25 0 25 50 75 100 125 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1 10 100 0.1 1 tj =25 f=1mhz v rms = 1v c o (vr) c o (vr = 1v) ih (t j ) ih (t j =25 ) v bo (t j ) v bo (t j =25 ) rev. 0, 03-dec-2001, kswc02
the ptc (positive temperature coefficient) is an overcurrent protection device telecom equipment e.g. modem fuse tspd 1 ring tip telecom equipment e.g. line card ring tip tspd 2 tspd 3 ptc ptc tspd 1 telecom equipment e.g. isdn tspd 1 ring tip tspd 2 ptc ptc typical circuit applications tc0640h thru TC3500H rev. 0, 03-dec-2001, kswc02
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