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vishay siliconix si6562cdq new product document number: 68954 s-82575-rev. a, 27-oct-08 www.vishay.com 1 n- and p-channel 20-v (d-s) mosfets features ? halogen-free ? trenchfet ? power mosfets applications ? load switch ? dc/dc converter product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) n-channel 20 0.022 at v gs = 4.5 v 6.7 a 6.7 nc 0.036 at v gs = 2.5 v 5.2 a p-channel - 20 0.030 at v gs = - 4.5 v - 6.1 a 17 nc 0.045 at v gs = - 2.5 v - 5.0 a orderin g information: SI6562CDQ-T1-GE3 (lead (p b )-free and halogen-free) n -channel mosfet g 1 d 1 s 1 s 2 g 2 d 2 p-channel mosfet d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top v ie w notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 145 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit drain-source voltage v ds 20 - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 6.7 - 6.1 a t c = 70 c 4.2 - 4.9 t a = 25 c 5.7 b, c - 5.1 b, c t a = 70 c 4.5 b, c - 4.1 b, c pulsed drain current i dm 30 - 30 source drain current diode current t c = 25 c i s 1.3 - 1.4 t a = 25 c 0.9 b, c - 1.0 b, c maximum power dissipation t c = 25 c p d 1.6 1.7 w t c = 70 c 1.0 1.1 t a = 25 c 1.1 b, c 1.2 b, c t a = 70 c 0.7 b, c 0.76 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol n-channel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, d t 10 s r thja 85 110 81 105 c/w maximum junction-to-foot (drain) steady state r thjf 62 80 57 75 rohs compliant
www.vishay.com 2 document number: 68954 s-82575-rev. a, 27-oct-08 vishay siliconix si6562cdq new product notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 20 v v gs = 0 v, i d = - 250 a p-ch - 20 v ds temperature coefficient v ds /t j i d = 250 a n-ch 22 mv/c i d = - 250 a p-ch - 21 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a n-ch - 3.5 i d = - 250 a p-ch 3.5 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.6 1.5 v v ds = v gs , i d = - 250 a p-ch - 0.6 - 1.5 gate-body leakage i gss v ds = 0 v, v gs = 12 v n-ch 100 na p-ch 100 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v n-ch 1 a v ds = - 20 v, v gs = 0 v p-ch - 1 v ds = 20 v, v gs = 0 v, t j = 55 c n-ch 10 v ds = - 20 v, v gs = 0 v, t j = 55 c p-ch - 10 on-state drain current b i d(on) v ds 5 v, v gs = 4.5 v n-ch 30 a v ds - 5 v, v gs = - 4.5 v p-ch - 30 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 5.7 a n-ch 0.018 0.022 v gs = - 4.5 v, i d = - 5.1 a p-ch 0.024 0.030 v gs = 2.5 v, i d = 4.4 a n-ch 0.029 0.036 v gs = - 2.5 v, i d = - 4.2 a p-ch 0.036 0.045 forward transconductance b g fs v ds = 10 v, i d = 5.7 a n-ch 17 s v ds = - 10 v, i d = - 5.1 a p-ch 22 dynamic a input capacitance c iss n-channel v ds = 10 v, v gs = 0 v, f = 1 mhz p-channel v ds = - 10 v, v gs = 0 v, f = 1 mhz n-ch 850 pf p-ch 1200 output capacitance c oss n-ch 150 p-ch 260 reverse transfer capacitance c rss n-ch 70 p-ch 45 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 5.7 a n-ch 15 23 nc v ds = - 10 v, v gs = - 10 v, i d = - 5.1 a p-ch 34 51 n-channel v ds = 10 v, v gs = 4.5 v, i d = 5.7 a p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 5.1 a n-ch 6.7 11 p-ch 17 30 gate-source charge q gs n-ch 1.8 p-ch 3 gate-drain charge q gd n-ch 0.9 p-ch 5.5 gate resistance r g f = 1 mhz n-ch 2 p-ch 6
document number: 68954 s-82575-rev. a, 27-oct-08 www.vishay.com 3 vishay siliconix si6562cdq new product notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 2.2 i d ? 4.5 a, v gen = 4.5 v, r g = 1 p-channel v dd = - 10 v, r l = 2.4 i d ? - 4.1 a, v gen = - 4.5 v, r g = 1 n-ch 12 20 ns p-ch 30 45 rise time t r n-ch 10 15 p-ch 25 40 turn-off delay time t d(off) n-ch 25 40 p-ch 45 70 fall time t f n-ch 10 15 p-ch 15 25 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 2.2 i d ? 4.5 a, v gen = 10 v, r g = 1 p-channel v dd = - 10 v, r l = 2.4 i d ? - 4.1 a, v gen = - 10 v, r g = 1 n-ch 10 15 ns p-ch 10 15 rise time t r n-ch 10 15 p-ch 10 15 turn-off delay time t d(off) n-ch 20 30 p-ch 45 70 fall time t f n-ch 8 15 p-ch 15 25 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch 1.3 a p-ch - 1.4 pulse diode forward current a i sm n-ch 30 p-ch - 30 body diode voltage v sd i s = 4.5 a, v gs = 0 v n-ch 0.8 1.2 v i s = - 4.1 a, v gs = 0 v p-ch - 0.8 - 1.2 body diode reverse recovery time t rr n-channel i f = 4.5 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 4.1 a, di/dt = - 100 a/s, t j = 25 c n-ch 15 30 ns p-ch 35 55 body diode reverse recovery charge q rr n-ch 6 12 nc p-ch 21 35 reverse recovery fall time t a n-ch 7.6 ns p-ch 18 reverse recovery rise time t b n-ch 7.4 p-ch 17
www.vishay.com 4 document number: 68954 s-82575-rev. a, 27-oct-08 vishay siliconix si6562cdq new product n-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5thr u 3 v v gs =1.5 v v gs =2 v v gs =2.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0 5 10 15 20 25 30 v gs =4.5 v v gs =2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 3 6 9 12 15 v ds =16 v i d =5.6a v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 200 400 600 8 00 1000 1200 0246 8 10 12 14 16 1 8 20 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs =2.5 v v gs =4.5 v i d =5.6a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 68954 s-82575-rev. a, 27-oct-08 www.vishay.com 5 vishay siliconix si6562cdq new product n-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 10 1 100 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.00 0.02 0.04 0.06 0.0 8 0.10 012345 t j =25 c t j = 125 c i d =5.6a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 4 8 12 16 20 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a =25 c single p u lse 1s,10s limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms dc 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
www.vishay.com 6 document number: 68954 s-82575-rev. a, 27-oct-08 vishay siliconix si6562cdq new product n-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0.0 0.4 0. 8 1.2 1.6 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w )
document number: 68954 s-82575-rev. a, 27-oct-08 www.vishay.com 7 vishay siliconix si6562cdq new product n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 0.2 0.1 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =145 c/ w 3. t jm -- t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.1 0.01 1 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
www.vishay.com 8 document number: 68954 s-82575-rev. a, 27-oct-08 vishay siliconix si6562cdq new product p-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5thr u 3 v v gs =1.5 v v gs =2 v v gs =2.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0 5 10 15 20 25 30 v gs =4.5 v v gs =2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 7 14 21 2 8 35 v ds =16 v i d =5.1a v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 300 600 900 1200 1500 0246 8 10 12 14 16 1 8 20 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ,2.5 v i d =5.1a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 68954 s-82575-rev. a, 27-oct-08 www.vishay.com 9 vishay siliconix si6562cdq new product p-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 10 1 100 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source single pulse power 0.00 0.02 0.04 0.06 0.0 8 0.10 012345 t j = 25 c t j = 125 c i d =5.1a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 4 8 12 16 20 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 1s,10s * limited b yr ds(on) b v dss limited 1ms 100 s 10 ms dc 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
www.vishay.com 10 document number: 68954 s-82575-rev. a, 27-oct-08 vishay siliconix si6562cdq new product p-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0.0 0.3 0.6 0.9 1.2 1.5 1. 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w )
document number: 68954 s-82575-rev. a, 27-oct-08 www.vishay.com 11 vishay siliconix si6562cdq new product p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68954. normalized thermal transient impedance, junction-to-ambient 0.2 0.1 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =145 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.1 0.01 1 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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