d a t a sh eet product speci?cation file under discrete semiconductors, sc14 september 1995 discrete semiconductors BFR92 npn 5 ghz wideband transistor
september 1995 2 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 description npn transistor in a plastic sot23 envelope primarily intended for use in rf wideband amplifiers and oscillators. the transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. pnp complement is bft92. pinning pin description code: p1p 1 base 2 emitter 3 collector fig.1 sot23. f page msb003 top view 12 3 quick reference data limiting values in accordance with the absolute maximum system (iec 134). note 1. t s is the temperature at the soldering point of the collector tab. symbol parameter conditions typ. max. unit v cbo collector-base voltage open emitter - 20 v v ceo collector-emitter voltage open base - 15 v i c dc collector current - 25 ma p tot total power dissipation up to t s =95 c; note 1 - 300 mw f t transition frequency i c = 14 ma; v ce = 10 v; f = 500 mhz; t j =25 c 5 - ghz c re feedback capacitance i c = 2 ma; v ce = 10 v; f = 1 mhz 0.4 - pf g um maximum unilateral power gain i c = 14 ma; v ce = 10 v; f = 500 mhz; t amb =25 c 18 - db f noise ?gure i c = 2 ma; v ce = 10 v; f = 500 mhz; t amb =25 c; z s = opt. 2.4 - db v o output voltage d im = - 60 db; i c = 14 ma; v ce = 10 v; r l =75 w ; t amb =25 c; f (p + q - r) = 493.25 mhz 150 - mv symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 20 v v ceo collector-emitter voltage open base - 15 v v ebo emitter-base voltage open collector - 2v i c dc collector current - 25 ma p tot total power dissipation up to t s =95 c; note 1 - 300 mw t stg storage temperature - 65 150 c t j junction temperature - 175 c
september 1995 3 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 thermal resistance note 1. t s is the temperature at the soldering point of the collector tab. characteristics t j =25 c unless otherwise speci?ed. notes 1. g um is the maximum unilateral power gain, assuming s 12 is zero and 2. crystal mounted in a sot37 envelope (bfr90). 3. d im = - 60 db (din 45004b); i c = 14 ma; v ce = 10 v; r l =75 w ; t amb =25 c; v p =v o at d im = - 60 db; f p = 495.25 mhz; v q =v o - 6 db; f q = 503.25 mhz; v r =v o - 6 db; f r = 505.25 mhz; measured at f (p + q - r ) = 493.25 mhz. symbol parameter conditions thermal resistance r th j-s thermal resistance from junction to soldering point up to t s =95 c; note 1 260 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = 10 v -- 50 na h fe dc current gain i c = 14 ma; v ce = 10 v 40 90 - f t transition frequency i c = 14 ma; v ce = 10 v; f = 500 mhz - 5 - ghz c c collector capacitance i e =i e = 0; v cb = 10 v; f = 1 mhz - 0.75 - pf c e emitter capacitance i c =i c = 0; v eb = 0.5 v; f = 1 mhz - 0.8 - pf c re feedback capacitance i c = 2 ma; v ce = 10 v; f = 1 mhz; t amb =25 c - 0.4 - pf g um maximum unilateral power gain (note 1) i c = 14 ma; v ce = 10 v; f = 500 mhz; t amb =25 c - 18 - db f noise ?gure (see fig.2 and note 2) i c = 2 ma; v ce = 10 v; f = 500 mhz; t amb =25 c; z s = opt. - 2.4 - db v o output voltage note 3 - 150 - mv g um 10 log s 21 2 1 s 11 2 C ? ?? 1 s 22 2 C ? ?? -------------------------------------------------------------- db B =
september 1995 4 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 fig.2 intermodulation distortion test circuit. l2=l3=5 m h ferroxcube choke, catalogue number 3122 108 20150. l1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. handbook, halfpage mea446 680 pf 300 l1 l2 680 pf 75 w input 75 w output 16 3.9 k l3 390 820 650 pf dut 24 v w w w w w fig.3 power derating curve. handbook, halfpage 0 50 100 200 400 300 100 0 200 mea425 - 1 150 p tot (mw) t s ( o c) fig.4 dc current gain as a function of collector current. v ce = 10 v; t j =25 c. handbook, halfpage 0102030 120 0 40 80 mcd074 h fe i (ma) c fig.5 collector capacitance as a function of collector-base voltage. i e =i e = 0; f = 1 mhz; t j =25 c. handbook, halfpage 01020 1 0 0.8 mea428 0.6 0.4 0.2 c c (pf) v cb (v)
september 1995 5 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 fig.6 transition frequency as a function of collector current. v ce = 10 v; f = 500 mhz; t j =25 c. handbook, halfpage 0102030 6 0 2 4 mea444 i (ma) c f t (ghz) fig.7 gain as a function of frequency. i c = 14 ma; v ce = 10 v; t amb =25 c. handbook, halfpage mea427 0 20 30 10 2 10 3 10 4 10 f (mhz) gain (db) g um i s i 12 2 fig.8 minimum noise figure as a function of frequency. i c = 2 ma; v ce = 10 v; t amb =25 c; z s = opt. handbook, halfpage 4 2 1 0 10 mea465 1 10 3 f (db) ? f (ghz) 5 6 fig.9 minimum noise figure as a function of collector current. v ce = 10 v; f = 500 mhz; t amb =25 c; z s = opt. handbook, halfpage mea424 020 5 0 1 2 3 4 51015 f (db) i c (ma)
september 1995 6 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 fig.10 noise circle figure. i c = 2 ma; v ce = 10 v; f = 500 mhz; t amb =25 c. handbook, halfpage 02040 80 20 0 mea426 60 g (ms) s b s (ms) 100 20 40 40 2.4 4 f = 5 db 4.5 3.5 3
september 1995 7 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 handbook, full pagewidth mea429 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j 500 200 1 0.2 10 5 2 0.5 1000 mhz 800 fig.11 common emitter input reflection coefficient (s 11 ). i c = 14 ma; v ce = 10 v; t amb =25 c. z o =50 w . handbook, full pagewidth + j - j 0 30 60 90 120 150 180 150 120 90 60 30 mea431 20 12 200 500 800 1000 mhz 4 fig.12 common emitter forward transmission coefficient (s 21 ). i c = 14 ma; v ce = 10 v; t amb =25 c.
september 1995 8 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 handbook, full pagewidth mea432 + j - j 0 30 60 90 120 150 180 150 120 90 60 30 0.10 0.05 200 500 800 1000 mhz 0.15 fig.13 common emitter reverse transmission coefficient (s 12 ). i c = 14 ma; v ce = 10 v; t amb =25 c. handbook, full pagewidth mea430 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j ?j 500 1 0.2 10 5 2 0.5 1000 mhz 800 200 fig.14 common emitter output reflection coefficient (s 22 ). i c = 14 ma; v ce = 10 v; t amb =25 c. z o =50 w .
september 1995 9 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
september 1995 10 philips semiconductors product speci?cation npn 5 ghz wideband transistor BFR92 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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