skr 12,4 qu bond ? by semikron rev. 0 ? 22.09.2009 1 diode skr i f(dc) = 235 a v rrm = 1600 v size: 12,4 mm x 12,4 mm skr 12,4 qu bond features ? high current density due to mesa technology ? high surge current ? compatible to thick wire bonding ? compatible to all standard solder processes typical applications ? uncontrolled rectifier bridges absolute maximum ratings symbol conditions values unit v rrm t j =25c, i r =0.2ma 1600 v i f(av) t s =80c, t j = 150 c 190 a i 2 t t j = 150 c, 10 ms, sin 180 26450 a 2 s i fsm 10 ms sin 180 t j =25c 3200 a t j = 150 c 2300 a t jmax 150 c electrical char acteristics symbol conditions min. typ. max. unit i r t j =25c, v rrm 0.2 ma t j = 120 c, v rrm 1.1 ma v f t j =25c, i f = 160 a 11.21v t j = 125 c, i f = 160 a 0.9 1.1 v v (to) t j = 125 c 0.83 v r t t j = 125 c 1.0 m ? t rr t j =25c, 1a 34 s thermal characteristics symbol conditions min. typ. max. unit t j -40 150 c t stg -40 150 c t solder 10 min. 250 c t solder 5 min. 320 c r th(j-s) soldered on 0,38 mm dcb, reference point on copper heatsink close to the chip 0.27 k/w mechanical characteristics symbol conditions values unit raster size 12,4 x 12,4 mm area total 153,76 mm 2 anode bondable (al) cathode solderable (ag/ni) wire bond al, diameter 500 m package tray chips / package 36 pcs
skr 12,4 qu bond 2 rev. 0 ? 22.09.2009 ? by semikron this technical information specifies semiconductor devices. no warranty or guarantee expressed or implied is made regarding del ivery, performance or suitability.
|
