vishay siliconix si1563edh document number: 71416 s10-1054-rev. d, 03-may-10 www.vishay.com 1 complementary 20 v (d-s) low-threshold mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets: 1.8 v rated ? esd protected: 2000 v ? thermally enhanced sc-70 package ? compliant to rohs directive 2002/95/ec applications ? load switching ? pa switch ? level switch product summary v ds (v) r ds(on) ( )i d (a) n-channel 20 0.280 at v gs = 4.5 v 1.28 0.360 at v gs = 2.5 v 1.13 0.450 at v gs = 1.8 v 1.0 p-channel - 20 0.490 at v gs = - 4.5 v - 1.0 0.750 at v gs = - 2.5 v - 0.81 1.10 at v gs = - 1.8 v - 0.67 sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top v ie w s 1 g 1 d 2 d 1 g 2 s 2 marking code ea xx lot tracea b ility and date code part # code yy p-channel d 1 s 1 g 1 1 k n -channel 3 k d 2 s 2 g 2 orderin g information: si1563edh-t1-e3 (lead (p b )-free) si1563edh-t1-ge3 (lead (p b )-free and halogen-free) notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted n-channel p-channel parameter symbol 5 s steady state 5 s steady state unit drain-source voltage v ds 20 - 20 v gate-source voltage v gs 12 12 continuous drain current (t j = 150 c) t a = 25 c i d 1.28 1.13 - 1.0 - 0.88 a t a = 85 c 0.92 0.81 - 0.72 - 0.63 pulsed drain current i dm 4.0 - 3.0 continuous source current (diode conduction) a i s 0.61 0.48 - 0.61 - 0.48 maximum power dissipation a t a = 25 c p d 0.74 0.57 0.30 0.57 w t a = 85 c 0.38 0.30 0.16 0.3 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 s r thja 130 170 c/w steady state 170 220 maximum junction-to-foot (drain) steady state r thjf 80 100
www.vishay.com 2 document number: 71416 s10-1054-rev. d, 03-may-10 vishay siliconix si1563edh notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 100 a n-ch 0.45 v v ds = v gs , i d = - 100 a p-ch - 0.45 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v n-ch 1 a p-ch 1 v ds = 0 v, v gs = 12 v n-ch 10 ma p-ch 10 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v n-ch 1 a v ds = - 16 v, v gs = 0 v p-ch - 1 v ds = 16 v, v gs = 0 v, t j = 85 c n-ch 5 v ds = - 16 v, v gs = 0 v, t j = 85 c p-ch - 5 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v n-ch 2 a v ds - 5 v, v gs = - 4.5 v p-ch - 2 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.13 a n-ch 0.220 0.280 v gs = - 4.5 v, i d = - 0.88 a p-ch 0.400 0.490 v gs = 2.5 v, i d = 0.99 a n-ch 0.281 0.360 v gs = - 2.5 v, i d = - 0.71 a p-ch 0.610 0.750 v gs = 1.8 v, i d = 0.20 a n-ch 0.344 0.450 v gs = - 1.8 v, i d = - 0.20 a p-ch 0.850 1.10 forward transconductance a g fs v ds = 10 v, i d = 1.13 a n-ch 2.6 s v ds = - 10 v, i d = - 0.88 a p-ch 1.5 diode forward voltage a v sd i s = 0.48 v, v gs = 0 v n-ch 0.8 1.2 v i s = - 0.48 v, v gs = 0 v p-ch - 0.8 - 1.2 dynamic b total gate charge q g n-channel v ds = 10 v, v gs = 4.5 v, i d = 1.13 a p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 0.88 a n-ch 0.65 1.0 nc p-ch 1.2 1.8 gate-source charge q gs n-ch 0.2 p-ch 0.3 gate-drain charge q gd n-ch 0.23 p-ch 0.3 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 20 i d ? 0.5 a, v gen = 4.5 v, r g = 6 p-channel v dd = - 10 v, r l = 20 i d ? - 0.5 a, v gen = - 4.5 v, r g = 6 n-ch 45 70 ns p-ch 150 230 rise time t r n-ch 85 130 p-ch 480 720 turn-off delay time t d(off) n-ch 350 530 p-ch 840 1200 fall time t f n-ch 210 320 p-ch 850 1200
document number: 71416 s10-1054-rev. d, 03-may-10 www.vishay.com 3 vishay siliconix si1563edh n-channel typical characteristics 25 c, unless otherwise noted gate-current vs. gate-source voltage output characteristics on-resistance vs. drain current 0 2 4 6 8 10 04 8 12 16 v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent (ma) i gss 0.0 0.5 1.0 1.5 2.0 01234 v gs = 5 v thr u 2 v 1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 1 v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 v gs = 4.5 v v gs = 2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs = 1. 8 v gate-current vs. gate-source voltage transfer characteristics capacitance 0.001 100 10 000 0.1 1 10 1000 v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent ( a) i gss 0 391215 t j = 25 c t j = 150 c 0.01 6 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 25 c t c = - 55 c 125 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 20 40 60 8 0 100 120 140 04 8 12 16 20 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) c- capacitance (pf)
www.vishay.com 4 document number: 71416 s10-1054-rev. d, 03-may-10 vishay siliconix si1563edh n-channel typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 v ds = 10 v i d = 1.2 8 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 1.0 1.2 0.1 1 2 0 0.2 0.6 0. 8 v sd -) v ( e g a t l o v n i a r d - o t - e c r u o s - s o u rce c u rrent (a) i s t j = 25 c t j = 150 c 0.4 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 i d = 100 a v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 1.13 a t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 i d = 1.13 a - on-resistance ( ) r ds(on) gs - gate-to-so u rce v oltage ( v ) v 0 1 5 po w er ( w ) time (s) 3 4 0 0 6 110 0.1 0.01 2 100
document number: 71416 s10-1054-rev. d, 03-may-10 www.vishay.com 5 vishay siliconix si1563edh n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 170 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02
www.vishay.com 6 document number: 71416 s10-1054-rev. d, 03-may-10 vishay siliconix si1563edh p-channel typical characteristics 25 c, unless otherwise noted gate-current vs. gate-source voltage output characteristics on-resistance vs. drain current 0 2 4 6 8 04 8 12 16 v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent (ma) i gss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234 v gs = 5 v thr u 3.5 v 1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 2 v 2.5 v 1 v 3 v 0.0 0.4 0. 8 1.2 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 4.5 v v gs = 2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs = 1. 8 v gate-current vs. gate-source voltage transfer characteristics capacitance 0.001 100 10 000 0.1 1 10 1000 v gs - gate-to-so u rce v oltage ( v ) - gate c u rrent ( a) i gss 0 391215 t j = 25 c t j = 150 c 0.01 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 c t c = - 55 c 125 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 40 8 0 120 160 04 8 12 16 20 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) c- capacitance (pf)
document number: 71416 s10-1054-rev. d, 03-may-10 www.vishay.com 7 vishay siliconix si1563edh p-channel typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 v ds = 10 v i d = 1 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 1.0 1.2 0.1 1 2 0 0.2 0.6 0. 8 v sd -) v ( e g a t l o v n i a r d - o t - e c r u o s - so u rce c u rrent (a) i s t j = 25 c t j = 150 c 0.4 - 0.15 - 0.10 - 0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 - 50 - 25 0 25 50 75 100 125 150 i d = 100 a v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 0. 88 a t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.0 0.4 0. 8 1.2 1.6 012345 i d = 0. 88 a - on-resistance ( ) r ds(on) gs - gate-to-so u rce v oltage ( v ) v 0 1 5 po w er ( w ) time (s) 3 4 0 0 6 110 0.1 0.01 2 100
www.vishay.com 8 document number: 71416 s10-1054-rev. d, 03-may-10 vishay siliconix si1563edh p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71416 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 170 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 0.02 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02
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