silicon mmic l-band downconverter upc2734gr preliminary data sheet features ? broadband frequency operation rf = 0.9 - 2.1 ghz, lo = 1.1 - 2.5 ghz ? high dynamic range: p sat = +5 dbm typical ? low distortion: ip 3 = +11 dbm typical ? switchable if outputs ? small ssop20 package ? tape and reel packaging available description the upc2734gr silicon mmic frequency downconverter is manufactured using the nesat iii mmic process. the nesat iii process produces transistors with f t approaching 20 ghz. the device was designed specifically for use as a receiver/downconverter in wide-dynamic range dbs, com- pressed video or spread-spectrum receivers. nec's stringent quality assurance and test procedures en- sure the highest reliability and performance. electrical characteristics 1 (t a = 25 c, v cc = 5 v, p lo = -10 dbm) part number upc2734gr package outline s20 (ssop20) symbols parameters and conditions units min typ max i cc circuit current (no signal) ma 28 40 52 f rf rf frequency range ghz 0.9 2.1 cg conversion gain f rf = 900 mhz, f if = 402.8 mhz db 10 13 16 f rf = 900 mhz, f if = 479.5 mhz db 9 12 15 f rf = 2.1 ghz, f if = 402.8 mhz db 7.5 10.5 13.5 f rf = 2.1 ghz, f if = 479.5 mhz db 7 10 13 nf noise figure f rf = 900 mhz, f if = 402.8 mhz db 9 11 f rf = 900 mhz, f if = 479.5 mhz db 10 13 f rf = 2.1 ghz, f if = 402.8 mhz db 14 17 f rf = 2.1 ghz, f if = 479.5 mhz db 15 18 p sat saturated output power (p in = 0 dbm) f rf = 900 mhz, f if = 402.8 mhz dbm +1 +4 f rf = 900 mhz, f if = 479.5 mhz dbm +0.5 +3.5 f rf = 2.1 ghz, f if = 402.8 mhz dbm +1 +4 f rf = 2.1 ghz, f if = 479.5 mhz dbm 0 +3 ip 3 ssb 3rd order intercept point f 1 = 900 mhz, f 2 = 930 mhz dbm +11 f 1 = 2.1 ghz, f 2 = 2.13 ghz dbm +10 sw output v sw 2 v* if out 1 v sw ? 3 v if out 2 * if sw is left open, if out1 is selected. note: 1. test circuit. internal block diagram mix out rf in if out 1 if out 2 sw lo in lo out amplifier switch california eastern laboratories
symbols parameters units ratings v cc supply voltage v 6 p d power dissipation 2 mw 433 t op operating temperature c -40 to +85 t stg storage temperature c -65 to +150 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on a 50 x 50 x 1.6 mm epoxy glass pwb (t a = +75 c). recommended operating conditions absolute maximum ratings 1 (t a = 25 c) symbols parameters units min typ max v cc supply voltage v 4.5 5.0 5.5 t op operating temperature c -40 25 85 upc2734gr part number upc2734gr package outline s20 (ssop20) symbols parameters and conditions units min typ max f rf rf frequency range ghz 0.9 2.1 cg conversion gain f rf = 900 mhz, f if = 402.8 mhz db 14 f rf = 900 mhz, f if = 479.5 mhz db 13.5 f rf = 2.1 ghz, f if = 402.8 mhz db 14.5 f rf = 2.1 ghz, f if = 479.5 mhz db 14 nf noise figure f rf = 900 mhz, f if = 402.8 mhz db 9.7 f rf = 900 mhz, f if = 479.5 mhz db 9.7 f rf = 2.1 ghz, f if = 402.8 mhz db 11 f rf = 2.1 ghz, f if = 479.5 mhz db 11 p sat saturated output power (p in = 0 dbm) f rf = 900 mhz, f if = 402.8 mhz dbm +5 f rf = 900 mhz, f if = 479.5 mhz dbm +4 f rf = 2.1 ghz, f if = 402.8 mhz dbm +5 f rf = 2.1 ghz, f if = 479.5 mhz dbm +5.5 ip 3 ssb 3rd order intercept point f rf1 = 900 mhz, f rf2 = 930 mhz dbm +11 f rf1 = 2.1 ghz, f rf2 = 2.13 ghz dbm +11 typical performance curves (v cc = 5 v, from test circuit) electrical characteristics (t a = 25 c, v cc = 5 v, measured using application circuit) 10 0 -10 -20 -30 -30 -20 -10 0 10 f if = 479.5 mhz f rf = 2.1 ghz = -40 ?c = +25 ?c = +85 ?c 20 15 10 5 0 0.1 0.2 0.5 12 34 5 = -40 ?c = +25 ?c = +85 ?c f if = 479.5 mhz p in = -30 dbm rf frequency (ghz) conversion gain, cg (db) output power, p out (dbm) input power, p in (dbm) conversion gain vs. rf frequency and temperature output power vs. input power and temperature
upc2734gr typical performance curves (v cc = 5 v, from test circuit) third order intermodulation vs. input power and temperature 0 -20 -40 -60 -30 -20 -10 0 +10 f if = 479.5 mhz f rf = 2.1, 2.13 ghz p out im 3 = -40 ?c = +25 ?c = +85 ?c input power, p in (dbm) 20 15 10 5 0 0.1 0.2 0.5 1 2 3 4 5 f if = 479.5 mhz p in = 30 dbm = -40 ?c = +25 ?c = +85 ?c rf frequency (ghz) noise figure, nf (db) 20 10 0 -10 -20 -30 -40 -50 -60 -30 -20 -10 0 p out im 3 f rf = 2.1 - 2.13 ghz f if = 479.5 mhz t a = 25?c third order intermodulation vs. input power intermodulation distortion, im 3 (dbm) input power level (dbm) intermodulation distortion, im 3 (dbm) circuit current vs. voltage and temperature = -40 ?c = +25 ?c = +85 ?c 60 50 40 30 20 10 0 0 1 23 4 5 6 supply voltage, v cc (dbm) circuit current v cc = 5.0 v p in = -30 dbm 20 15 10 5 0 1 2 0 25 20 15 10 5 cg nf f if = 479 mhz f if = 402 mhz conversion gain and noise figure vs. rf frequency noise figure, nf (db) conversion gain, cg (db) rf frequency (ghz) typical performance curves (v cc = 5 v, from application circuit) noise figure vs. rf frequency and temperature output power, p out (dbm) output power, p out (dbm)
typical performance curves (t a = 25 c, v cc = 5 v unless otherwise specified, from application circuit) upc2734gr 0 1 2 -1 -2 1.0 2.0 v cc = 5.5 v v cc = 5.0 v v cc = 4.5 v -10 -20 -30 -40 -50 -60 -70 1.0 2.0 3.0 2.64 ghz 1.23 ghz v tu = 0 - 30 v lo frequency drift (mhz) lo frequency (ghz) lo frequency (ghz) power out, p out (dbm) tuning voltage vs. oscillator frequency tuning voltage (v) 3.0 2.5 2.0 1.5 1.0 05 15 20 25 30 10 oscillator frequency (ghz) test circuit 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 buffer amp osc osc. amp if amp reg sw mix if out2 if out1 rf in osc in osc out v cc sw 100 w 100 w 1000 pf 150 pf 150 pf 150 m f 150 pf 150 pf 3300 pf 150 pf 150 pf 150 m f oscillator frequency drift vs. supply voltage oscillator frequency bandwidth
outline dimensions (units in mm) 20 11 1 10 7.00 max 6.40.2 4.40.1 1.0 0.50.2 0.15 1.8 max 1.5 0.1 0.22 0.65 0.575 max n +0.10 - 0.05 +0.10 - 0.05 xxx = lot/date code upc2734gr application circuit package outline ssop 20 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 buffer amp osc osc. amp if amp reg sw mix if out2 if out1 rf in osc out sw 3300 pf 5000 pf 150 pf 5000 pf 150 pf 150 pf 3300 pf 150 pf 4 pf 3300 pf 150 pf 150 w v cc 5000 pf v tu 2k w hvu316 (hitachi) hvu316 1m w 150 w 3300pf 1pf 0.5 pf lead connections 1. mixer if output 2. gnd 3. bypass (rf in) 4. rf in 5. nc 6. nc 7. nc 8. vcc 9. if out 1 10. if out 2 11. sw - if amp switch 12. vcc 13. osc out 14. gnd 15. osc collector 1 16. osc base 2 17. osc base 1 18. osc collector 2 19. gnd 20. bypass (mixer if out) nc = no connection nec c2734g xxxxx all dimensions are typical unless otherwise specified. lead material: alloy 42 lead plating: lead tin alloy ordering information part number quantity UPC2734GR-E1 2500/reel note: embossed tape, 12 mm wide. pins 1 through 10 are in tape pull-out direction. exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com printed in usa on recycled paper -11/97 data subject to change without notice
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