ddc144tu dual npn transistors with 47k ohm base resistor new product general description ? ddc144tu is best suited for logic switching applications using control circuits like mi cro-controllers, comparators, etc. it features two discret e npn transistors which can support maximum continuous current of 100 ma. npn transistors can be used as a control and also these can be biased using higher supply vo ltages due to the built in current limiting base resistor of 47 k ohm. the component devices can be used as a part of a circuit or as a stand alone discrete device. features ? built in base resistors ? epitaxial planar die construction ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-363 ? case material: molded plastic. "green molding" compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see fig. 2 ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking & type code information: see page 5 ? ordering information: see page 5 ? weight: 0.015 grams (approximate) fig. 1: sot-363 r1 47k eq1 eq2 bq2 cq2 bq1 cq1 q1 ddc144t_die q2 r2 47k ddc144t_die fig. 2: schematic and pin configuration sub-component p/n reference device type r1 (nom) r2 (nom) figure ddtc144t_die q1 npn 47k ? 2 ddtc144t_die q2 npn ? 47k 2 maximum ratings: total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation p d 200 mw power deration above 25 c p der 1.6 mw / c output current i out 100 ma thermal characteristics characteristic symbol value unit junction operation and storage temperature range t j , t stg -55 to +150 c thermal resistance, junction to ambient (packaged device) (ref: equivalent to only one heated junction) @ t a = 25 c r ja 625 c/w notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http:/ www.di odes.com/products/lead_f ree/index.php. 3. device m ounted on fr-4 pcb, 1" x 0.85" x 0.062"; pad layout as shown on page 5 or see diodes inc. suggested pad layout document ap02001, which can be found on our website at http:/ www.di odes.com/datas heets/ap02001.pdf. ds30767 rev. 6 - 2 1 of 6 www.diodes.com ddc144tu ? diodes incorporated
maximum ratings: new product sub-component device: discret e npn transistor (q1, q2) @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current (dc) i c(max) 50 ma electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base cut off current i cbo ? ? 100 na v cb = 50v, i e = 0 collector-emitter cut off current, i o(off) i ceo ? ? 500 na v ce = 50v, i b = 0 emitter-base cut off current i ebo ? ? 500 na v eb = 5v, i c = 0 collector-base breakdown voltage v (br)cbo 50 ? ? v i c = 50ua, i e = 0 collector-emitter breakdown voltage v (br)ceo 50 ? ? v i c = 1 ma, i b = 0 b emitter-base breakdown voltage v (br)ebo 6 ? ? v i e = 50ua, i c = 0 output voltage (transistor is off) v oh 4.6 4.45 ? v v cc = 5v, v b = 0.05v, r b l = 1k input voltage (load is off) v i(off) ? 0.6 0.4 ? v ce = 5v, i c = 100ua output current (leakage same as i ceo ) i o(off) ? ? 850 na v cc = 50v, v i = 0v on characteristics* ? 0.03 0.1 v i c = 2.5 ma, i b = 0.25 ma b ? 0.075 0.1 v i c = 10ma, i b = 0.5ma b ? 0.05 0.1 v i c = 10ma, i b = 1ma b collector-emitter saturation voltage v ce(sat) ? 0.2 0.3 v i c = 50ma, i b = 5ma b 150 400 ? ? v ce = 5v, i c = 1 ma 150 400 ? ? v ce = 5v, i c = 10 ma 150 350 ? ? v ce = 5v, i c = 25 ma 150 300 ? ? v ce = 5v, i c = 50 ma dc current gain h fe 50 110 ? ? v ce = 5v, i c = 100 ma output voltage (equivalent to v ce(sat) or v o(on) ) v ol ? 0.2 0.25 vdc v cc = 5v, v b = 2.5v, r b l =10k input voltage v i(on) 1.5 0.95 ? vdc v o = 0.3v, i c = 2ma input current i i ? 19.2 28 ma v i = 5v base-emitter turn-on voltage v be(on) ? ? 1.2 v v ce = 5v, i c = 2ma base-emitter saturation voltage v be(sat) ? ? 1.6 v i c = 200ua, i b = 20ua b input resistor +/- 30% (base) r1 ? 47 ? k ? small signal characteristics transition frequency (gain-bandwidth product) f t ? 250 ? mhz v ce = 10v, i e = 5ma, f =100mhz collector capacitance, (ccbo-output capacitance) c c ? ? 5 pf v cb = 10v, i e = 0, f = 1mhz *pulse test: pulse width, tp<300 us, duty cycle, d<=0.02 new product ds30767 rev. 6 - 2 2 of 6 www.diodes.com ddc144tu ? diodes incorporated
05 0 25 12510075 150 175 250 200 100 50 150 0 t , ambient temperature ( c) fig. 3 maximum power derating curve a p , p o we r d issi p ati o n (mw) d 05 0 25 125100 75 150 175 35 30 25 15 10 5 20 0 t , ambient temperature ( c) fig. 4 power derating for nominal operation a p , p o we r d issi p a t i o n (mw) d i collector current (ma) fig. 5 dc current gain c , h d c c u r r e nt g a in fe , t= 125c a t= 85c a t= 25c a t= 125c a t= 150c a t= -55c a i collector current (ma) fig. 6 dc current gain c , h d c c u r r e nt gain fe , t= 25c a t= 85c a t= 125c a t= 150c a t= -55c a v collector-emitter voltage (v) fig. 7 i ce cce , vs. v i, c o ll e c t o r c u r r e n t ( a ) c i = 4.5ma b i = 5ma b i = 1ma b i = 0.5ma b i = 3ma b i = 2.5ma b i = 3.5ma b i = 4ma b i = 1.5ma b 0.01 0.1 1 10 100 0.1 1 100 1000 v ce(sat) , collector emitter saturation voltage (v) i , collector current (ma) fig. 8 v vs i c ce(sat) c 10 t = 150c a t = 125c a t = 25c a t =85c a t =-55c a new product ds30767 rev. 6 - 2 3 of 6 www.diodes.com ddc144tu ? diodes incorporated
0.1 1 10 100 i , collector current (ma) fig. 9 v vs i c be c v, base-emi t t e r v o l t a g e (v) be t = 150 c a t = 125c a t = 85c a t = 25c a 1 i , collector current (ma) c fig. 10 v vs i be(sat) c t = -55c a t = 85c a t = 150 c a t = 125 c a i , collector current (ma) c fig. 11 input voltage vs output current t =150c a t = -55c a t = 85c a t = 25c a new product ds30767 rev. 6 - 2 4 of 6 www.diodes.com ddc144tu ? diodes incorporated
new product ordering information (note 4) device marking code packaging shipping DDC144TU-7 n21 sot-363 3000/tape & reel notes: 4. for packaging details, please see below or go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information n21 ym n21 ym n21 = product type marking code ym = date code marking y = year e.g., u = 2007 m = month e.g., 9 = september fig. 12 date code key year 2006 2007 2008 2009 2010 2011 2012 code t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d mechanical details sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm a m j l d b c h k f fig. 13 ds30767 rev. 6 - 2 5 of 6 www.diodes.com ddc144tu ? diodes incorporated suggested pad layout: (based on ipc-sm-782) x z y c e e g fig. 14 figure 14 dimensions sot-363 z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65 all dimensions in mm
ds30767 rev. 6 - 2 6 of 6 www.diodes.com ddc144tu ? diodes incorporated new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated.
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