elektronische bauelemente SMG2334NE 3.5 a, 30 v, r ds(on) 60 m ? n-channel enhancement mosfet 14-jul-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc conv erters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sc-59 saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) ( ?? i d (a) 60@v gs = 4.5v 3.5 30 82@v gs = 2.5v 3.0 absolute maximum ratings and thermal data (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v t a =25c 3.5 continuous drain current a t a =70c i d 2.8 a pulsed drain current b i dm 16 a continuous source current (diode conduction) a i s 1.25 a t a =25c 1.3 power dissipation a t a =70c p d 0.8 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance data t Q 10 sec 100 maximum junction to ambient a steady-state r ja 166 c/w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 ? ? gate ? ? source ? ? drain esd protection diode 2kv
elektronische bauelemente SMG2334NE 3.5 a, 30 v, r ds(on) 60 m ? n-channel enhancement mosfet 14-jul-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test conditions static gate-threshold voltage v gs(th) 0.6 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 4v - - 1 v ds = 24v, v gs = 0v zero gate voltage drain current i dss - - 25 a v ds = 24v, v gs = 0v, t j =55 c on-state drain current a i d(on) 6 - - a v ds = 5v, v gs = 4.5v - - 60 v gs = 4.5v, i d = 3.5a drain-source on-resistance a r ds(on) - - 82 m ? v gs = 2.5v, i d = 3a forward transconductance a g fs - 6.9 - s v ds = 15v, , i d = 3.5a diode forward voltage v sd - 0.8 - v i s = 2.3a, v gs = 0v dynamic b total gate charge q g - 6.3 - gate-source charge q gs - 0.9 - gate-drain charge q gd - 1.9 - nc i d = 3.5a v ds = 15v v gs = 2.5v turn-on delay time td (on) - 16 - rise time t r - 5 - turn-off delay time td (off) - 23 - fall time t f - 3 - ns i d = 1a, v dd = 25v v gen = 10v r l = 25 ? notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not subject to production testing.
elektronische bauelemente SMG2334NE 3.5 a, 30 v, r ds(on) 60 m ? n-channel enhancement mosfet 14-jul-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2334NE 3.5 a, 30 v, r ds(on) 60 m ? n-channel enhancement mosfet 14-jul-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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