r07ds0173ej0100 rev.1.00 page 1 of 6 mar 11, 2011 preliminary datasheet RJP60D0DPP-M0 silicon n channel igbt high speed power switching features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (i c = 22 a, v ge = 15 v, ta = 25c) ? gate to emitter voltage rating ? 30 v ? pb-free lead plating and chip bonding outline renesas package code: prss0003af-a) (package name: to-220fl) 1 2 3 1. gate 2. collector 3. emitter c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v tc = 25c i c 45 a collector current tc = 100c i c 22 a collector peak current ic(peak) note1 90 a collector dissipation p c note2 35 w junction to case thermal impedance ? j-c note2 3.57 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c r07ds0173ej0100 rev.1.00 mar 11, 2011 www..net
RJP60D0DPP-M0 preliminary r07ds0173ej0100 rev.1.00 page 2 of 6 mar 11, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.0 ? 6.0 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.6 2.2 v i c = 22 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 2.0 ? v i c = 45 a, v ge = 15 v note3 input capacitance cies ? 1050 ? pf output capacitance coes ? 70 ? pf reveres transfer capacitance cres ? 32 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 45 ? nc gate to emitter charge qge ? 6 ? nc gate to collector charge qgc ? 20 ? nc v ge = 15 v v ce = 300 v i c = 22 a t d(on) ? 35 ? ns t r ? 20 ? ns t d(off) ? 90 ? ns switching time t f ? 70 ? ns v cc = 300 v, v ge = 15 v i c = 22 a rg = 5 ?? ? inductive load) short circuit withstand time t sc 3.0 5.0 ? ? s v cc ? 400 v, v ge = 15 v notes: 3. pulse test
RJP60D0DPP-M0 preliminary r07ds0173ej0100 rev.1.00 page 3 of 6 mar 11, 2011 main characteristics collector current i c (a) collector to emitter v oltage v ce (v) maximum safe operation area collector current i c (a) case t emperature t c (c) maximum dc collector current vs. case temperature 02 55 0100 75 125 150 175 02 55 0100 75 125 150 175 collector current i c (a) collector to emitter v oltage v ce (v) turn-off soa 0200 400 600 800 collector dissip ation pc (w) case t emperature t c (c) collector dissip ation vs. case temperature 50 40 30 20 10 0 50 40 30 20 10 0 100 80 60 40 20 0 1000 100 1 10 0.1 1100 10 1000 ta = 25c single pulse 100 pw = 10 cal output characteristics 80 60 40 20 12345 collector current i c (a) 0 0 collector to emitter v oltage v ce (v) pulse t est t a = 25 c v ge = 8 v 15 v 18 v 10 v 12 v typi cal output characteristics 80 60 40 20 12345 collector current i c (a) 0 0 collector to emitter v oltage v ce (v) pulse t est t a = 150 c v ge = 8 v 15 v 10 v 18 v 12 v
RJP60D0DPP-M0 preliminary r07ds0173ej0100 rev.1.00 page 4 of 6 mar 11, 2011 gate to emitter v oltage v ge (v) collector to emitter satularion v oltage vs. gate to emitter v oltage (t ypical) collector to emitter satularion v oltage vs. gate to emitter v oltage (t ypical) gate to emitter v oltage v ge (v) 0 4 2 6 8 048 12 201 6 0 4 2 6 8 collector to emitter satularion v oltage v ce(sat) (v) collector to emitter satularion v oltage v ce(sat) (v) ta = 2 5 c puls e test i c = 22 a 45 a 048 12 201 6 ta = 1 50 c puls e test i c = 22 a 45 a 1 10 100 swithing energy losses e (j) collector current i c (a) (inductive load) 1 100 10 1000 switching caracteristics (t ypical) (1) switching caracteristics (t ypical) (2) collector current i c (a) (inductive load) switch ing times t (ns) 1 10 100 10 1000 100 10000 v cc = 300 v, v ge = 15 v rg = 5 , ta = 25 c t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v rg = 5 , ta = 25 c eon eoff switching caracteristics (t ypical) (3) switching caracteristics (t ypical) (4) 10 100 1000 2 5 10 20 50 10 100 1000 gate registance rg () (inductive load) gate registance rg () (inductive load) swithing energy losses e (j) switch ing times t (ns) v cc = 300 v, v ge = 15 v i c = 22 a, ta = 2 5 c t d(off) t d(on) t f t r 2 5 10 20 50 v cc = 300 v, v ge = 15 v i c = 22 a, ta = 2 5 c eoff eon
RJP60D0DPP-M0 preliminary r07ds0173ej0100 rev.1.00 page 5 of 6 mar 11, 2011 pulse width pw (s) thermal impedance ch ? c ( c/w) thermal impedance vs. pulse width switching time test circuit waveform t c = 25c single pulse 10 1 0.01 0.1 100 1m 10 m 100 m 1 10 100 diode clamp/ d.u.t d.u.t/ driver rg l v cc 10% t f tr t d(off) t d(on) ic vin 90% 90% 90% 10% 10% t on t off collector current i c (a) gate to emitter v oltage v ge (v) transfer characteristics (typical) 048 12 1 6 0 80 60 40 20 ta = 2 5 c 150 c v ce = 10 v pulse test
RJP60D0DPP-M0 preliminary r07ds0173ej0100 rev.1.00 page 6 of 6 mar 11, 2011 package dimension unit: mm p revious c od e pr ss0003 af- a t o -22 0 f l mass[t y p. ] 1.5 g ? rene s a s c od e jeita packa g e code packa g e nam e t o -22 0 f l 3.6 0.3 15. 0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 3.2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2 .6 0 . 2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part number quan tity shipping container RJP60D0DPP-M0-t2 1050 pcs box (tube)
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