sot223 npn silicon planar medium power transistors issue 3 ? february 1996 j complementary types ? bsp40 ? bsp30 bsp42 ? bsp32 partmarking detail ? device type in full absolute maximum ratings. parameter symbol bsp40 bsp42 unit collector-base voltage v cbo 70 90 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a base current i b 100 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base bsp40 breakdown voltage bsp42 v (br)cbo 70 90 v v i c =100 m a i c =100 m a collector-emitter bsp40 breakdown voltage bsp42 v (br)ceo 60 80 v v i c =10ma i c =10ma emitter-base breakdown voltage v (br)ebo 5v i e =10 m a collector cut-off current i cbo 100 50 na m a v cb =60v v cb =60v, t amb =125c collector-emitter saturation voltage v ce(sat) 0.25 0.5 v v i c =150ma, i b =15ma i c =500ma, i b =50ma base-emitter saturation voltage v be(sat) 1.0 1.2 v v i c =150ma, i b =15ma i c =500ma, i b =50ma static forward current transfer ratio h fe 10 40 30 120 i c =100 m a, v ce =5v i c =100ma, v ce =5v i c =500ma, v ce =5v collector capacitance c c 12 pf v cb =10v, f =1mhz emitter capacitence c e 90 pf v eb =0.5v, f=1mhz transition frequency f t 100 mhz i c =50ma, v ce =10v f =35mhz turn-on time t on 250 ns v cc =20v, i c =100ma i b1 =-i b2 =-5ma turn-off time t off 1000 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt493 datasheet. bsp40 bsp42 c c e b 3 - 63
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