2 C 16 ghz low noise gallium arsenide fet technical data 36 micro-x package features ? low noise figure: 1.4 db typical at 12 ghz ? high associated gain: 9.0 db typical at 12 ghz ? high output power: 17.5 dbm typical p 1 db at 12 ghz ? cost effective ceramic microstrip package ? tape-and-reel packaging option available [1] electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. nf o optimum noise figure: v ds = 2.5 v, i ds = 20 ma f = 8.0 ghz db 1.2 f = 12.0 ghz db 1.4 1.6 f = 14.0 ghz 1.6 g a gain @ nf o : v ds = 2.5 v, i ds = 20 ma f = 8.0 ghz db 11.5 f = 12.0 ghz db 8.0 9.0 f = 14.0 ghz db 7.5 p 1 db power output @ 1 db gain compression: f = 12.0 ghz dbm 17.5 v ds = 4 v, i ds = 40 ma g 1 db 1 db compressed gain: v ds = 4 v, i ds = 40 ma f = 12.0 ghz db 8.5 g m transconductance: v ds = 2.5 v, v gs = 0 v mmho 25 55 i dss saturated drain current: v ds = 2.5 v, v gs = 0 v ma 40 50 90 v p pinch-off voltage: v ds = 2.5 v, i ds = 1 ma v -4.0 -1.5 -0.5 note: 1. refer to packaging section tape-and-reel packaging for surface mount semiconductors. ATF-13336 description the ATF-13336 is a high perfor- mance gallium arsenide schottky- barrier-gate field effect transistor housed in a cost effective micro- strip package. its premium noise figure makes this device appropri- ate for use in low noise amplifiers operating in the 2-16 ghz frequency range. this gaas fet device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
2 ATF-13336 typical performance, t a = 25 c ATF-13336 absolute maximum ratings absolute symbol parameter units maximum [1] v ds drain-source voltage v +5 v gs gate-source voltage v -4 v gd gate-drain voltage v -6 i ds drain current ma i dss p t power dissipation [2,3] mw 225 t ch channel temperature c 175 t stg storage temperature c -65 to +175 thermal resistance: q jc = 400 c/w; t ch = 150 c liquid crystal measurement: 1 m m spot size [5] notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case temperature = 25 c. 3. derate at 2.5mw/ c for t case > 85 c. 4. storage above +150 c may tarnish the leads of this package difficult to solder into a circuit. after a device has been soldered into a circuit, it may be safely stored up to 175 c. 4. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section for more information. part number ordering information part number devices per reel reel size ATF-13336-tr1 1000 7" ATF-13336-str 10 strip frequency (ghz) nf o (db) figure 3. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 2.5 v, i ds = 20 ma. frequency (ghz) gain (db) 2.0 1.5 1.0 0.5 0 16 14 12 10 8 6 g a (db) 6.0 10.0 8.0 12.0 14.0 16.0 g a nf o |s 21 | 2 msg mag 2.0 4.0 6.0 8.0 10.0 12.0 16.0 25 20 15 10 5 0 figure 1. optimum noise figure and associated gain vs. frequency. v ds = 2.5 v, i ds = 20 ma, t a = 25 c. i ds (ma) figure 2. optimum noise figure and associated gain vs. i ds . v ds = 2.5 v, f = 12.0 ghz. nf o (db) 020 10 40 50 30 60 14 12 10 8 g a (db) 2.5 2.0 1.5 1.0 g a nf o ATF-13336 noise parameters: v ds = 2.5 v, i ds = 20 ma freq. nf o g opt ghz db mag ang r n /50 4.0 0.8 .63 93 .27 6.0 1.1 .47 138 .10 8.0 1.2 .40 -153 .20 12.0 1.4 .52 -45 .88 14.0 1.6 .57 -2 1.3
3 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ds = 2.5 v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 2.0 .96 -51 10.6 3.39 127 -27.1 .044 57 .61 -41 3.0 .88 -75 10.3 3.28 106 -23.4 .060 33 .58 -51 4.0 .86 -96 10.1 3.19 86 -22.6 .074 25 .57 -57 5.0 .79 -117 9.9 3.13 66 -20.6 .093 12 .54 -65 6.0 .69 -142 10.2 3.22 46 -18.9 .114 1 .49 -79 7.0 .60 -178 10.1 3.21 21 -17.6 .132 -18 .42 -97 8.0 .54 141 9.8 3.10 -4 -17.3 .137 -33 .31 -112 9.0 .56 103 8.9 2.80 -26 -16.7 .147 -48 .21 -121 10.0 .56 74 8.3 2.60 -48 -16.5 .150 -63 .09 -145 11.0 .58 44 7.6 2.39 -68 -16.8 .145 -78 .07 89 12.0 .63 20 6.7 2.17 -90 -17.5 .133 -95 .16 43 13.0 .65 3 6.0 2.00 -108 -18.3 .121 -107 .19 21 14.0 .66 -7 5.5 1.89 -126 -18.9 .114 -121 .19 -4 15.0 .70 -19 4.9 1.76 -144 -19.0 .112 -129 .16 -28 16.0 .72 -34 4.4 1.66 -175 -19.2 .110 -142 .14 -32 a model for this device is available in the device models section. 36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 133
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