SSE90N06-10P 90 a, 60 v, r ds(on) 9.9 m ? n-channel enhancement mode mos.fet elektronische bauelemente 29-nov-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. typical applications ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe to-220p saves board space. ? fast switch speed. ? high performance trench technology. product summary SSE90N06-10P v ds (v) r ds (on) (m ? ? i d (a) 60 9.9@v gs = 10v 90 1 13@v gs = 4.5v absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 t c = 25 c i d 90 a pulsed drain current 2 i dm 240 a continuous source current (diode conduction) a i s 90 a power dissipation 1 t c = 25 c p d 300 w operating junction and st orage temperature range t j , t st g -55 ~ 175 c thermal resistance ratings parameter symbol maximum unit maximum junction to ambient 1 r ? c / w maximum junction to case r ? notes 1 package limited. 2 pulse width limited by maximum junction temperature. g 1 s 3 d 2 n-channel ref. millimete r ref. millimete r min. max. min. max. a 7.90 8.10 n 0.75 0.95 b 9.45 9.65 o 0.66 0.86 c 9.87 10.47 p 13.50 14.50 d - 11.50 q 2.44 3.44 e 1.06 1.46 r 3.50 3.70 f 2.60 3.00 s 1.15 1.45 g 6.30 6.70 t 4.30 4.70 h 8.35 8.75 u - 2.7 j1.60 t yp . v 1.89 3.09 k 1.10 1.30 w 0.40 0.60 l 1.17 1.37 x 2.60 3.60 m- 1.50 to-220p dimensions in millimeters i f m q q u v b r t s p x k 2 3 1 c a d e g h j l n o w
SSE90N06-10P 90 a, 60 v, r ds(on) 9.9 m ? n-channel enhancement mode mos.fet elektronische bauelemente 29-nov-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d = 250ua gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 ua v ds = 48v, v gs = 0v - - 25 v ds = 48v, v gs = 0v, t j = 55 c on-state drain current 1 i d(on) 120 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 9.9 m ? v gs = 10v, i d = 30a - - 13 v gs = 4.5v, i d = 20a forward transconductance 1 g fs - 30 - s v ds = 15v, i d = 30a diode forward voltage v sd - 1.1 - v i s = 34a, v gs = 0v dynamic 2 total gate charge q g - 49 - nc v ds = 15v, v gs = 4.5v, i d = 90a gate-source charge q gs - 9.0 - gate-drain charge q gd - 10 - turn-on delay time t d(on) - 16 - ns v dd = 25v, v gen = 10v, r l = 25 ? , i d = 34a rise time t r - 10 - turn-off delay time t d(off) - 50 - fall time t f - 23 - notes 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not su bject to production testing.
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