? semiconductor components industries, llc, 2001 october, 2001 rev. 2 1 publication order number: bc212/d bc212, bc212b, bc213 amplifier transistors pnp silicon maximum ratings rating symbol value unit collector-emitter voltage bc212 bc213 v ceo 50 30 vdc collector-base voltage bc212 bc213 v cbo 60 45 vdc emitter-base voltage v ebo 5.0 vdc collector current continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.0 8.0 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r q ja 357 c/w thermal resistance, junction to case r q jc 125 c/w device package shipping ordering information bc212 to92 http://onsemi.com to92 case 29 style 17 5000 units/box 3 2 1 bc212b to92 5000 units/box bc212brl1 to92 2000/tape & reel bc212bzl1 to92 2000/ammo pack bc213 to92 5000 units/box collector 1 2 base 3 emitter bc21xx = specific device code xx = 2, 2b, or 3 y = year ww = work week marking diagrams bc2 1xx yww
bc212, bc212b, bc213 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit collectoremitter breakdown voltage bc212 (i c = 2.0 madc, i b = 0) bc213 v (br)ceo 50 30 vdc collectorbase breakdown voltage bc212 (i c = 10 a, i e = 0) bc213 v (br)cbo 60 45 vdc emitterbase breakdown voltage bc212 (i e = 10 adc, i c = 0) bc213 v (br)ebo 5 5 vdc collectoremitter leakage current bc212 (v cb = 30 v) bc213 i cbo 15 15 nadc emitterbase leakage current bc212 (v eb = 4.0 v, i c = 0) bc213 i ebo 15 15 nadc on characteristics dc current gain (i c = 10 m adc, v ce = 5.0 vdc) bc212 bc213 (i c = 2.0 madc, v ce = 5.0 vdc) bc212 bc213 (i c = 100 madc, v ce = 5.0 vdc) (note 1.) bc212 bc213 h fe 40 40 60 80 120 140 collectoremitter saturation voltage (i c = 10 madc, i b = 0.5 madc) (i c = 100 madc, i b = 5.0 madc) (note 1.) v ce(sat) 0.10 0.25 0.6 vdc baseemitter saturation voltage (i c = 100 madc, i b = 5.0 madc) v be(sat) 1.0 1.4 vdc baseemitter on voltage (i c = 2.0 madc, v ce = 5.0 vdc) v be(on) 0.6 0.62 0.72 vdc dynamic characteristics currentgain bandwidth product (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) bc212 bc213 f t 280 360 mhz commonbase output capacitance (v cb = 10 vdc, i c = 0, f = 1.0 mhz) c ob 6.0 pf noise figure (i c = 0.2 madc, v ce = 5.0 vdc, r s = 2.0 k w , f = 1.0 khz, f = 200 hz) bc212, bc213 nf 10 db smallsignal current gain (i c = 2.0 madc, v ce = 5.0 vdc, f = 1.0 khz) bc212 bc213 bc212b h fe 60 80 200 400 1. pulse test: tp 300 s, duty cycle 2.0%.
bc212, bc212b, bc213 http://onsemi.com 3 2.0 1.5 1.0 0.2 0.3 0.5 0.7 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c , collector current (madc) figure 1. normalized dc current gain h fe , normalized dc current gain v ce = -10 v t a = 25 c -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -0.1 i c , collector current (madc) figure 2. asaturationo and aono voltages v, voltage (volts) t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce(sat) @ i c /i b = 10 400 20 30 40 60 80 100 200 300 i c , collector current (madc) figure 3. currentgain bandwidth product f t , current-gain bandwidth product (mhz) c, capacitance (pf) 10 1.0 2.0 3.0 5.0 7.0 -0.4 v r , reverse voltage (volts) figure 4. capacitances t a = 25 c c ib c ob r b , base spreading resistance (ohms) 150 140 130 120 110 100 i c , collector current (madc) figure 5. output admittance -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 v ce = -10 v t a = 25 c -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 1.0 i c , collector current (madc) figure 6. base spreading resistance v ce = -10 v f = 1.0 khz t a = 25 c -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 v ce = -10 v f = 1.0 khz t a = 25 c -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 0.01 0.03 0.05 0.1 0.3 0.5 h , output admittance (ohms) ob 150
bc212, bc212b, bc213 http://onsemi.com 4 package dimensions to92 (to226) case 2911 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 17: pin 1. collector 2. base 3. emitter on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bc212/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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