pin diodes for rf switching and attenuating technical data features ? low harmonic distortion ? large dynamic range ? low series resistance ? low capacitance description/applications these general purpose switching diodes are intended for low power switching applications such as rf duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. the 5082-3188 is optimized for vhf/uhf bandswitching. 1n5719 1n5767 5082-3001 5082-3039 5082-3077 5082-3080/81 5082-3188 5082-3379 the rf resistance of a pin diode is a function of the current flowing in the diode. these current controlled resistors are specified for use in control applications such as variable rf attenuators, automatic gain control circuits, rf modulators, electrically tuned filters, analog phase shifters, and rf limiters. outline 15 diodes are available on tape and reel. the tape and reel specification is patterned after rs-296-d. 0.41 (.016)
0.36 (.014) 25.4 (1.00)
min. 25.4 (1.00)
min. 1.93 (.076)
1.73 (.068) cathode dimensions in millimeters and (inches). 4.32 (.170)
3.81 (.150) outline 15 maximum ratings junction operating and storage temperature range ................................................ -65 c to +150 c power dissipation 25 c ..................................................................... 250 mw (derate linearly to zero at 150 c) peak inverse voltage (piv) ........................................................ same as v br maximum soldering temperature ....................................... 260 c for 5 sec
2 mechanical specifications the hp outline 15 package has a glass hermetic seal with dumet leads. the lead finish is 95-5 tin- lead (snpb) for all pin diodes. the leads on the outline 15 package should be restricted so that the bend starts at least 1/16 inch (1.6 mm) from the glass body. typical package inductance and capacitance are 2.5 nh and 0.13 pf, respectively. marking is by digital coding with a cathode band. general purpose diodes electrical specifications at t a = 25 c maximum minimum maximum part total breakdown residual series effective carrier reverse recovery number capacitance voltage resistance lifetime time 5082- c t (pf) v br (v) r s ( w ) t (ns) t rr (ns) general purpose switching and attenuating 3001 0.25 200 1.0 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1n5719 0.3** 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) band switching 3188 1.0* 35 0.6** 70 (typ.)* 12 (typ.) test v r = 50 v v r = v br i f =100 ma i f = 50 ma i f = 20 ma conditions *v r = 20 v measure *i f = 20 ma i r = 250 ma v r = 10 v **v r = 100 v i r 10 ma **i f = 10 ma *i f = 10 ma 90% recovery f = 1 mhz f = 100 mhz *i r = 6 ma notes: typical cw power switching capability for a shunt switch in a 50 w system is 2.5 w. part marking on glass package diodes, outline 15 is: 5082-xxxx hpx xxx yww for example, 1n5767 made in 1996 work week 35 would be marked: hp5 767 635
3 rf current controlled resistor diodes electrical specifications at t a = 25 c max. max. high low difference effective min. residual max. resistance resistance in carrier breakdown series total limit, r h (w) limit, r l (w) resistance part lifetime voltage resistance capacitance vs. bias number t (ns) v br (v) r s ( w )c t (pf) min. max. min. max. slope, dc 5082-3080 1300 (typ.) 100 2.5 0.4 1000 8** 1n5767* 1300 (typ.) 100 2.5 0.4 1000 8** 5082-3379 1300 (typ.) 50 0.4 8** 5082-3081 2500 (typ.) 100 3.5 0.4 1500 8** test i f = 50 ma v r = v br ,i f = 100 ma v r = 50 v i f = 0.01 ma i f = 1.0 ma batch conditions i r = 250 ma measure f = 100 mhz f = 1 mhz f = 100 mhz i f = 20 ma** matched at i r 10 ma f = 100 mhz i f = 0.01 ma and 1.0 ma f = 100 mhz *the 1n5767 has the additional specifications: t = 1.0 msec minimum i r = 1 m a maximum at v r = 50 v v f = 1 v maximum at i f = 100 ma. typical parameters at t a = 25 c (unless otherwise noted) i f ?forward bias current (ma) figure 2. typical rf resistance vs. forward bias current.
10,000
1000
100
10
1
0.1 rf resistance (ohms) 0.001 0.01 0.1 1 10 100 5082-3001
5082-3039
5082-3077
in5719 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 i f ?forward current (ma) v f ?forward voltage (v) figure 1. forward current vs. forward voltage. 5082-3001, 3039,
3077, 3080
in5719 125 c
25 c
?0 c
figure 3. typical rf resistance vs. forward bias current. i f ?forward bias current (ma)
100,000
10,000
1000
100
10
1 rf resistance (ohms) 0.001 0.01 0.1 1 10 100 5082-3080
5082-3379 5082-3081
www.hp.com/go/rf for technical assistance or the location of your nearest hewlett-packard sales office, distributor or representative call: americas/canada: 1-800-235-0312 or 408-654-8675 far east/australasia: call your local hp sales office. japan: (81 3) 3335-8152 europe: call your local hp sales office. data subject to change. copyright ? 1998 hewlett-packard co. obsoletes 5966-0941e printed in u.s.a. 5967-5812e (5/98) typical parameters at t a = 25 c (cont.) reverse voltage (v) figure 4. typical capacitance vs. reverse voltage.
1.0 .5 0 capacitance (pf) 01020 30 40 50 60 70 figure 5. typical capacitance vs. reverse voltage. 5082-3001
3039
3077
in5719 5082-3039
in5719 5082-3001 reverse voltage (v)
2.5 .5 1.0 1.5 2.0 0 capacitance (pf) 01020 30 40 50 60 70 5082-3080
5082-3081
5082-3379 5082-3188 figure 7. typical second order intermodulation distortion. frequency (mhz)
0 80 60 40 20 100 below first order (db) 01020 30 40 50 60 80 70 10 db bridged tee attenuator
40 db mv output levels
one input frequency fixed 100 mhz 5082-3081 figure 6. typical reverse recovery time vs. forward current for various reverse driving voltages. forward current (ma)
reverse recovery time (ns) 0102030 v r = 5 v v r = 10 v v r = 20 v 1000 100 10 5082-3080
5082-3379 figure 8. typical cross intermodulation distortion. modulated frequency (mhz)
10 70 60 50 40 30 20 80 below first order (db) 01020 30 40 50 60 80 70 pin diode cross modulation
10 db bridged tee attenuator
unmodulated frequency 100 mhz 100% modulation 15 khz
40 db mv output levels 5082-3081 5082-3080
5082-3379
|
