1 power transistors 2SB1499, 2SB1499a silicon pnp epitaxial planar type for low-freauency power amplification n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l allowing automatic insertion with radial taping n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C60 C80 C60 C80 C5 C8 C4 15 2 150 C55 to +150 unit v v v a a w ?c ?c 2SB1499 2SB1499a 2SB1499 2SB1499a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 * h fe2 v be v ce(sat) f t t on t stg t f conditions v ce = C60v, v be = 0 v ce = C80v, v be = 0 v ce = C30v, i b = 0 v ce = C60v, i b = 0 v eb = C5v, i c = 0 i c = C30ma, i b = 0 v ce = C4v, i c = C1a v ce = C4v, i c = C3a v ce = C4v, i c = C3a i c = C4a, i b = C 0.4a v ce = C10v, i c = C 0.1a, f = 10mhz i c = C4a, i b1 = C 0.4a, i b2 = 0.4a min C60 C80 70 15 typ 30 0.2 0.5 0.2 max C400 C400 C700 C700 C1 250 C2 C1.5 unit m a m a ma v v v mhz m s m s m s 2SB1499 2SB1499a 2SB1499 2SB1499a 2SB1499 2SB1499a * h fe1 rank classification rank q p h fe1 70 to 150 120 to 250 unit: mm 1:base 2:collector 3:emitter mt4 type package 1.0 10.0 0.2 0.55 0.1 2.5 0.2 2.5 0.2 4.2 0.2 13.0 0.2 2.5 0.2 18.0 0.5 solder dip 5.0 0.1 2.25 0.2 1.2 0.1 0.65 0.1 0.55 0.1 c1.0 90 c1.0 123 1.05 0.1 0.35 0.1
2 power transistors 2SB1499, 2SB1499a p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ? ? ? ? ? ? t c =25?c ?00ma ?0ma ?0ma ?0ma ?0ma ?0ma ?ma ?ma i b =?20ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 ?.0 ?.6 ?0.4 ?.2 ?0.8 0 ?0 ? ? ? ? t c =100?c ?5?c 25?c v ce =?v base to emitter voltage v be ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 25?c t c =100?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 1 3 10 30 100 300 1000 3000 10000 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =?v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 10ms t=1ms i cp 2SB1499a 2SB1499 i c non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 (1) (2) note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
|
