X02XXXN ? may 1998 ed: 1a sensitive gate scr symbol parameter value unit i t(rms) * rms on-state current (180 conduction angle) ttab= 90 c1.4 a ta=75 c1.0 a i t(av) * mean on-state current (180 conduction angle) ttab= 90 c0.9 a ta=75 c0.64 a i tsm non repetitive surge peak on-state current (t j initial = 25 c ) tp = 8.3 ms 25 a tp = 10 ms 22.5 a i 2 ti 2 t value for fusing tp = 10 ms 2.5 a 2 s di/dt critical rate of rise of on-state current i g = 10 ma di g /dt = 0.1 a/ m s. 30 a/ m s t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s 260 c * : with 5cm 2 copper (e=35 m m) surface under tab. absolute ratings (limiting values) sot223 (plastic) i t(rms) = 1.4a v drm = 200v to 800v low i gt < 200 m a features symbol parameter voltage unit bdmn v drm v rrm repetitive peak off-state voltage t j = 125 c r gk = 1k w 200 400 600 800 v the X02XXXN series of scrs uses a high performance top glass pnpn technology. these parts are intended for general purpose high volume applications using surface mount technology. description a a k g 1/5
p g (av) = 0.2 w p gm = 3 w (tp = 20 m s) i gm = 1.2 a (tp = 20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient * 60 c/w rth(j-t) junction to tab for dc 25 c/w * : with 5cm 2 copper (e=35 m m) surface under tab. thermal resistances symbol test conditions sensitivity unit 02 03 05 i gt v d =12v (dc) r l =140 w tj= 25 c min 20 20 m a max 200 200 50 v gt v d =12v (dc) r l =140 w tj= 25 cmax 0.8 v v gd v d =v drm r l =3.3k w r gk = 1 k w tj= 125 cmin 0.1 v v rgm i rg =10 m a tj= 25 cmin 8 v tgd v d =v drm i tm = 3 x i t(av ) di g /dt = 0.1a/ m s i g = 10ma tj= 25 ctyp 0.5 m s i h i t = 50ma r gk = 1 k w tj= 25 c max 5 ma i l i g =1ma r gk = 1 k w tj= 25 c max 6 ma v tm i tm = 2.8a tp= 380 m s tj= 25 cmax 1.5 v i drm i rrm v d = v drm r gk = 1 k w v r = v rrm tj= 25 c max 5 m a tj= 110 c max 200 m a dv/dt v d =67%v drm r gk = 1 k w tj= 110 c typ 15 20 15 v/ m s tq i tm = 3 x i t(av ) v r =35v di/dt=10a/ m s tp=100 m s dv/dt=2v/ m s v d = 67%v drm r gk = 1 k w tj= 110 c max 100 m s electrical characteristics ordering information x 02 03 m n scr top glass current package : n = sot223 voltage sensitivity X02XXXN 2/5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 p(w) 360 o =180 o = 120 o =90 o =60 o =30 o dc i(a) t(av) fig.1 : maximum average power dissipation ver- sus average on-state current. 0 102030405060708090100110120130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i (a) t(av) = 180 o dc ttab ( c) o fig.3 : average on-state current versus tab tem- perature. igt ih 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o tj( c) o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -85 -95 -105 -115 -125 p(w) ttab ( c) o tamb ( c) o rth(j-t) rth(j-a) fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and ttab). 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp(s) standard foot print , e(cu)=35 m fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 1000 0 5 10 15 20 25 tj initial = 25 c o number of cycles i(a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. X02XXXN 3/5
110 1 10 100 i(a).i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 00.511.522.533.544.5 0.1 1 10 100 i(a) tm tj initial 25 c o tj max v(v) tm tj max vto =1.05v rt =0.150 fig.8 : on-state characteristics (maximum values). X02XXXN 4/5
package mechanical data sot223 (plastic) a a1 t b1 e1 d b h e e s c a1 v v1 v2 o ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.50 1.70 0.059 0.067 a1 0.02 0.10 0.001 0.004 b 2.95 3.15 0.090 0.124 b1 0.65 0.85 0.026 0.033 c 0.25 0.35 0.010 0.014 d 6.30 6.70 0.248 0.264 e 2.3 0.091 e1 4.6 0.181 e 3.30 3.70 0.130 0.146 h 6.70 7.30 0.264 0.287 o 0.63 0.65 0.67 0.025 0.026 0.026 s 0.85 1.05 0.033 0.041 t 1.10 1.30 0.043 0.051 v 10 max v1 10 min 16max v2 10 min 16max weight : 0.11 g type marking x0202bn x2b x0202dn x2d x0202mn x2m x0202nn x2n x0203bn x3b x0203dn x3d x0203mn x3m x0203nn x3n x0205bn x5b x0205dn x5d x0205mn x5m x0205nn x5n marking information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication a re subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics product s are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. foot print X02XXXN 5/5
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