ne664m04 nec's medium power npn silicon high frquency transistor r57 2.050.1 1.250.1 3 1.30 1 4 2 0.65 0.65 1.25 2.00.1 +0.30 +0.01 -0.05 0.65 0.65 +0.40 +0.30 -0.05 (leads 1, 3 and ,4) 0.590.05 +0.11 +0.1 -0.05 ? high gain bandwidth: f t = 20 ghz ? high output power: p -1db = 26 dbm at 1.8 ghz ? high linear gain: g l = 12 db at 1.8 ghz ? low profile m04 package: sot-343 footprint, with a height of only 0.59 mm flat lead style for better rf performance features california eastern laboratories description nec's ne664m04 is fabricated using nec's state-of-the-art uhs0 25 ghz f t wafer process. with a transition frequency of 20 ghz, the ne664m04 is usable in applications from 100 mhz to over 3 ghz. the ne664m04 provides p1db of 26 dbm, even with low voltage and low current, making this device an excellent choice for the output or driver stage for mobile or fixed wireless applications. the ne664m04 is housed in nec's low profile/flat lead style "m04" package notes: 1. pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. collector to base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected t o the guard pin of capacitance meter. 3. electronic industrail association of japan 4. mag = |s 21 | |s 12 | k - 1 ). 2 ( k - part number ne664m04 package outline m04 eiaj 3 registration number 2sc5754 symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 5v, i e = 0 na 1000 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na 1000 h fe dc current 1 gain at v ce = 3 v, i c = 100 ma 40 60 100 p 1db output power at 1 db compression point at v ce = 3.6 v, i cq = 4 ma, dbm 26.0 f = 1.8 ghz, p in = 15 dbm, 1/2 duty cycle g l linear gain at v ce = 3.6 v, i cq = 20 ma, f = 1.8 ghz, p in = 0 dbm, db 12.0 1/2 duty cycle mag maximum available power gain 4 at v ce = 3 v, i c = 100 ma, f = 2 ghz dbm 12.0 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 100 ma, f = 2 ghz db 5.0 6.5 c collector efficiency, 3.6 v, i cq = 4 ma, f = 1.8 ghz, p in = 15 dbm, % 60 1/2 duty cycle f t gain bandwidth at v ce = 3 v, i c = 100 ma, f = 0.5 ghz ghz 16 20 cre feedback capacitance 2 at v cb = 3 v, i c = 0, f = 1 mhz pf 1.0 1.5 electrical characteristics (t a = 25 c) dc rf pin connections 1. emitter 2. collector 3. emitter 4. base
note: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on 38 x 38 mm, t = 0.4 mm polyimide pcb. symbols parameters units ratings v cbo collector to base voltage v 13 v ceo collector to emitter voltage v 5.0 v ebo emitter to base voltage v 1.5 i c collector current ma 500 p t total power dissipation 2 mw 735 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) part number quantity NE664M04-T2-A 3k pcs./reel ordering information symbols parameters units ratings r th j-a 1 junction to ambient resistance 1 c/w 170 r th j-a 2 junction to ambient resistance 2 c/w 570 thermal resistance note: 1. mounted on 38 x 38 mm, t = 0.4 mm polyimide pcb. 2. stand alone device in free air. ne664m04 applications bluetooth power class 1 f = 2.4 ghz 0 dbm 13 dbm 22 dbm ne663m04 ne664m04 t80 r57 ss cordless phone f = 2.4 ghz 20 dbm 26 dbm ne664m04 r57 dcs1800 (gsm1800) cellular phone f = 1.8 ghz 5 dbm 16 dbm 25 dbm 35 dbm ne678m04 ne664m04 ne5520379a (mos fet) a 3 9z001 r55 r57 cordless phone f = 0.9 ghz ?3 dbm 9 dbm 25 dbm ne68019 (3-pin tusmm) ne664m04 r57 t h
ne664m04 typical performance curves (t a = 25 c) ambient temperature, t a ( o c) total power dissipation, p tot (mw) total power dissipation vs. ambient temperature collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage collector to base voltage, v cb (v) reverse tramsfer capacitance, c re (pf) reverse transfer capacitance vs. collector to base voltage collector current, i c (ma) base to emitter voltage, v be (v) collector current, i c (ma) collector current vs. base to emitter voltage collector current, i c (ma) dc current gain h fe dc current gain vs. collector current mounted on polyimide pcb (38 x 38 mm, t = 0.4 mm) 205 735 1000 600 800 400 200 0 25 50 75 100 125 150 stand alone device in free air f = 1 mhz 2.0 1.5 1.0 0.5 0 12345 1000 100 10 1 0.1 0.01 0.5 0.6 0.7 0.8 0.9 1.0 0.001 v ce = 3 v i b : 0.5 ma step i b = 0.5 ma 450 400 350 300 250 200 150 100 50 0123456 7 ma 6 ma 1 ma 2 ma 3 ma 4 ma 5 ma 1000 100 10 110 100 1000 v ce = 3 v
ne664m04 typical performance curves (t a = 25 c) collector current, i c (ma) gain bandwidth product, f t (ghz) gain bandwidth product vs. collector current collector current, i c (ma) insertion power gain, mag, msg vs. collector current frequency, f (hz) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) insertion power gain, mag, msg vs. frequency insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) collector current, i c (ma) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) insertion power gain, mag, msg vs. collector current collector current, i c (ma) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) insertion power gain, mag, msg vs. collector current v ce = 3 v f = 0.5 ghz 25 20 15 10 5 0 1 10 100 1000 v ce = 3 v i c = 100 ma 35 30 25 20 15 10 5 0 10 1 msg mag | s 21e | 2 v ce = 3 v f = 1 ghz 20 15 10 5 0 1 10 100 1000 msg mag | s 21e | 2 v ce = 3 v f = 2 ghz 20 15 10 5 0 1 10 100 1000 msg mag | s 21e | 2 v ce = 3 v f = 2.5 ghz 10 100 1000 1 0 5 10 15 20 | s 21e | 2 msg mag
ne664m04 typical performance curves (t a = 25 c) v ce = 3.2 v, f = 0.9 ghz i cq = 20 ma, 1/2 duty 30 25 20 15 10 5 0 -15 -10 -5 05 10 15 g p i c p out c 0 50 100 150 200 250 300 v ce = 3.2 v, f = 2.4 ghz i cq = 20 ma, 1/2 duty 30 25 20 15 10 5 0 -5 0 5 10 15 20 25 i c p out c 0 50 100 150 200 250 300 g p v ce = 3.2 v, f = 1.8 ghz i cq = 4 ma, 1/2 duty 30 25 20 15 10 5 0 g p i c p out c 0 50 100 150 200 250 300 -10 -5 0 510 15 20 v ce = 3.2 v, f = 1.8 ghz i cq = 20 ma, 1/2 duty 30 25 20 15 10 5 0 g p i c p out c 0 50 100 150 200 250 300 -10 -5 0 510 15 20 v ce = 3.6 v, f = 1.8 ghz i cq = 4 ma, 1/2 duty 30 25 20 15 10 5 g p i c p out c 0 -10 -5 0 510 15 20 0 50 100 150 200 250 300 v ce = 3.6 v, f = 1.8 ghz i cq = 20 ma, 1/2 duty 30 25 20 15 10 5 g p i c p out c 0 -10 -5 0 510 15 20 0 50 100 150 200 250 300 input power, p in (dbm) output power, p out (dbm) power gain, g p (db) input power, p in (dbm) output power, p out (dbm) power gain, g p (db) output power, power gain, collector current, & collector efficiency vs. input power collector current, i c (ma) collector efficiency, c (%) output power, power gain, collector current, & collector efficiency vs. input power collector current, i c (ma) collector efficiency, c (%) input power, p in (dbm) output power, p out (dbm) power gain, g p (db) input power, p in (dbm) output power, p out (dbm) power gain, g p (db) output power, power gain, collector current, & collector efficiency vs. input power collector current, i c (ma) collector efficiency, c (%) output power, power gain, collector current, & collector efficiency vs. input power collector current, i c (ma) collector efficiency, c (%) input power, p in (dbm) output power, p out (dbm) power gain, g p (db) input power, p in (dbm) output power, p out (dbm) power gain, g p (db) output power, power gain, collector current, & collector efficiency vs. input power collector current, i c (ma) collector efficiency, c (%) output power, power gain, collector current, & collector efficiency vs. input power collector current, i c (ma) collector efficiency, c (%)
frequency collector to emitter source impedance load impedance f (ghz) voltage v ce (v) z s ( ? ? ? ? ? )z l ( ? ? ? ? ? ) 0.9 2.8 to 3.6 8.4 - 5.2j 15.1- 4.3j 1.8 2.8 to 3.6 6.3 - 16.4j 15.8- 6.9j 2.4 2.8 to 3.6 5.9 - 22.1j 15.2- 17.9j large signal impedances z l z l z s gnd gnd rf output line rf input line z s tr. b c e e z s z l f = 0.9 ghz z s z l z s z l f = 1.8 ghz f = 2.4 ghz ne664m04
typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne664m04 v c = 1 v, i c = 10 ma 0.50 0.784 -161.6 6.573 95.1 0.075 19.0 0.491 -138.6 0.32 19.44 1.00 0.801 178.1 3.389 77.6 0.081 16.3 0.454 -164.9 0.60 16.23 1.50 0.810 166.2 2.271 65.1 0.084 18.9 0.460 -178.3 0.85 14.33 2.00 0.812 157.2 1.710 54.4 0.090 18.1 0.467 172.5 1.03 11.77 2.50 0.820 149.0 1.378 44.3 0.097 20.8 0.476 165.3 1.16 9.14 3.00 0.827 141.5 1.163 35.2 0.109 20.6 0.482 158.0 1.20 7.60 3.50 0.834 133.6 1.013 26.1 0.119 18.7 0.498 151.0 1.22 6.47 4.00 0.838 125.9 0.901 17.1 0.133 16.2 0.508 143.9 1.22 5.49 4.50 0.845 118.0 0.816 8.6 0.146 11.6 0.525 136.4 1.19 4.84 5.00 0.850 110.4 0.743 0.1 0.160 8.6 0.546 128.9 1.17 4.15 5.50 0.855 102.3 0.678 - 7.5 0.170 5.7 0.570 121.9 1.19 3.40 6.00 0.861 95.2 0.624 - 14.9 0.175 0.9 0.599 115.4 1.18 2.93 6.50 0.866 88.6 0.573 - 21.9 0.190 - 3.9 0.625 108.6 1.15 2.44 7.00 0.874 82.3 0.530 - 28.0 0.195 - 7.7 0.650 102.4 1.14 2.05 7.50 0.881 76.5 0.485 - 34.0 0.198 - 12.6 0.676 95.6 1.14 1.58 8.00 0.889 72.0 0.451 - 38.9 0.203 - 17.2 0.696 89.6 1.13 1.29 8.50 0.898 67.3 0.422 - 44.1 0.211 - 21.6 0.716 83.0 1.09 1.14 9.00 0.905 63.5 0.391 - 48.5 0.205 - 25.6 0.733 76.4 1.11 0.76 9.50 0.911 60.2 0.360 - 52.4 0.208 - 30.2 0.740 70.9 1.11 0.34 10.00 0.916 56.1 0.337 - 56.3 0.208 - 33.9 0.768 63.4 1.12 0.01 10.50 0.917 52.2 0.321 - 60.0 0.209 - 38.7 0.782 58.1 1.12 - 0.24 11.00 0.926 48.4 0.305 - 64.1 0.210 - 42.2 0.793 53.2 1.09 - 0.27 11.50 0.923 44.4 0.295 - 66.4 0.208 - 46.5 0.811 49.2 1.11 - 0.52 12.00 0.931 40.0 0.290 - 69.9 0.221 - 50.7 0.816 46.3 1.06 - 0.27 j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s 22 s 11 0.200 to 12.000ghz by 0.100 120? 90? 60? 30? 150? 180? -150? -120? -90? -60? -30? 0? 0.200 to 12.000ghz by 0.100 note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain ne664m04
note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain ne664m04 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne664m04 v c = 2 v, i c = 100 ma 0.50 0.808 177.3 9.415 90.1 0.027 50.0 0.652 -167.8 0.87 25.50 1.00 0.812 167.0 4.762 77.9 0.046 62.1 0.650 176.3 1.04 18.88 1.50 0.819 158.7 3.176 68.6 0.065 57.6 0.657 166.5 1.07 15.33 2.00 0.822 151.3 2.387 60.0 0.083 53.6 0.662 158.5 1.08 12.85 2.50 0.830 143.8 1.925 51.6 0.106 48.0 0.666 151.4 1.06 11.12 3.00 0.831 137.2 1.616 43.8 0.123 43.3 0.670 144.1 1.07 9.60 3.50 0.834 129.9 1.410 36.0 0.140 37.1 0.669 137.0 1.07 8.45 4.00 0.837 122.8 1.256 27.7 0.159 30.9 0.672 129.3 1.06 7.52 4.50 0.836 115.1 1.138 19.7 0.175 25.2 0.680 121.7 1.06 6.61 5.00 0.843 107.7 1.035 12.1 0.188 18.1 0.691 114.7 1.06 5.96 5.50 0.843 100.1 0.945 4.4 0.197 11.6 0.701 108.2 1.06 5.25 6.00 0.851 93.1 0.868 - 2.5 0.207 6.4 0.715 101.9 1.06 4.71 6.50 0.857 86.5 0.800 - 9.0 0.212 - 0.2 0.731 95.8 1.06 4.23 7.00 0.865 80.8 0.742 - 15.3 0.222 - 4.7 0.745 90.2 1.06 3.80 7.50 0.866 75.4 0.688 - 21.2 0.225 - 10.8 0.751 84.5 1.07 3.29 8.00 0.874 70.6 0.641 - 26.6 0.225 - 15.7 0.761 78.7 1.07 2.94 8.50 0.883 66.5 0.591 - 32.4 0.227 - 19.8 0.772 72.4 1.07 2.56 9.00 0.891 62.6 0.551 - 37.1 0.231 - 25.9 0.774 66.3 1.06 2.24 9.50 0.900 59.2 0.517 - 43.0 0.221 - 30.6 0.788 60.8 1.06 2.17 10.00 0.902 55.6 0.491 - 47.2 0.226 - 34.5 0.796 54.7 1.07 1.80 10.50 0.914 51.8 0.456 - 52.1 0.219 - 39.4 0.805 49.5 1.06 1.69 11.00 0.918 48.1 0.435 - 56.2 0.219 - 43.8 0.810 45.5 1.05 1.54 11.50 0.917 44.1 0.419 - 60.1 0.219 - 47.4 0.822 41.9 1.06 1.31 12.00 0.917 39.7 0.413 - 63.7 0.229 - 50.6 0.822 38.8 1.05 1.13 j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s 22 s 11 0.200 to 12.000ghz by 0.100 120? 90? 60? 30? 150? 180? -150? -120? -90? -60? -30? 0? 0.200 to 12.000ghz by 0.100
note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain ne664m04 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne664m04 v c = 3 v, i c = 200 ma 0.50 0.801 175.9 9.856 89.7 0.024 66.8 0.624 -169.4 1.01 25.43 1.00 0.808 166.3 4.975 77.5 0.044 68.0 0.632 175.5 1.07 18.85 1.50 0.815 158.4 3.310 68.2 0.066 62.1 0.633 166.7 1.07 15.41 2.00 0.819 150.9 2.483 59.8 0.084 57.6 0.638 158.1 1.08 12.95 2.50 0.822 143.9 1.996 51.6 0.102 52.3 0.644 150.8 1.09 11.11 3.00 0.830 136.8 1.676 43.6 0.122 43.9 0.648 144.1 1.07 9.80 3.50 0.832 129.7 1.461 35.8 0.138 39.2 0.653 136.7 1.07 8.62 4.00 0.831 122.5 1.299 27.6 0.156 32.6 0.656 129.3 1.07 7.59 4.50 0.835 115.0 1.171 19.8 0.173 26.9 0.662 122.1 1.07 6.75 5.00 0.837 107.6 1.069 12.0 0.187 19.5 0.672 114.9 1.06 6.05 5.50 0.842 100.2 0.979 4.4 0.198 11.8 0.683 108.2 1.06 5.44 6.00 0.848 93.0 0.896 - 2.8 0.211 7.0 0.698 102.1 1.06 4.83 6.50 0.853 86.4 0.828 - 9.1 0.214 1.2 0.711 96.2 1.06 4.32 7.00 0.862 80.5 0.764 - 15.4 0.216 - 4.7 0.724 90.6 1.06 3.92 7.50 0.868 75.4 0.707 - 21.5 0.226 - 9.8 0.736 85.1 1.06 3.47 8.00 0.873 70.4 0.660 - 26.8 0.231 - 15.6 0.748 78.9 1.06 3.08 8.50 0.881 66.5 0.611 - 32.7 0.223 - 20.4 0.750 72.7 1.07 2.72 9.00 0.890 62.7 0.572 - 36.9 0.226 - 24.0 0.764 67.2 1.07 2.45 9.50 0.895 59.3 0.532 - 42.0 0.226 - 30.2 0.771 61.0 1.07 2.11 10.00 0.903 55.7 0.498 - 47.9 0.219 - 33.8 0.779 55.0 1.07 1.91 10.50 0.911 52.0 0.466 - 51.7 0.224 - 38.3 0.793 48.9 1.06 1.64 11.00 0.915 48.3 0.445 - 56.3 0.219 - 43.0 0.794 45.8 1.06 1.53 11.50 0.919 44.1 0.430 - 60.1 0.226 - 46.2 0.810 41.6 1.05 1.40 12.00 0.918 39.8 0.426 - 64.6 0.229 - 49.5 0.811 39.3 1.05 1.34 j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s 22 s 11 0.200 to 12.000ghz by 0.100 120? 90? 60? 30? 150? 180? -150? -120? -90? -60? -30? 0? 0.200 to 12.000ghz by 0.100 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec com p ound semiconductor devices, ltd . 0 4/ 0 4/ 2003
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408) 919-2500 facsimile: ( 408 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix ? indicates that the device is pb-free. the ?z suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cel? understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information. restricted substance per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -az lead (pb) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmium < 100 ppm not detected hexavalent chromium < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: information provided by cel on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. efforts are underway t o better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. cel and ce l suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall cel? liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of warranties and liability.
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