a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 1 ma 65 v bv cer i c = 5 ma r be = 10 ? 65 v bv ebo i e = 1 ma 3.5 v i ces v ce = 50 v 6.3 ma h fe v ce = 5.0 v i c = 100 ma 5 --- p g c v cc = 50 v p out = 90 w f = 1025 - 1150 mhz p in = 13 w 8.4 35 db % npn silicon rf power transistor MSC1090M description: the asi MSC1090M is a common base class c transistor, designed for avionics, dme applications from 1025 to 1150 mhz. features: ? internal input matching network ? p g = 8.4 db at 90 w/1150 mhz ? omnigold ? metalization system maximum ratings i c 250 ma v cc 50 v p diss 290 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 0.60 c/w package style .250 2l flg(b) 1 = collector 2 = emitter 3 & 4 = base minimum inches / mm 1.050 / 26.67 .120 / 3.05 .245 / 6.22 .552 / 14.02 .790 / 20.07 b c d e f g a maximum .255 / 6.48 .572 / 14.53 .810 / 20.57 .140 / 3.56 inches / mm h .003 / 0.08 .007 / 0.18 dim k i j .052 / 1.32 .072 / 1.83 .130 / 3.30 .088 x 45 chamfer a b ? d e f g h i k c j .100 x 45 .095 / 2.41 .105 / 2.67 .285 / 7.24 .210 / 5.33 .120 / 3.05 1 2 3 4
|
