3.5 - 81 3.5 100v thru 1000v, up to 30 amp, n-channel mosfet in a surface mount package 4 11 r1 supersedes 1 05 r0 power mosfet in hermetic surface mount package features ? surface mount hermetic package ? high current/low r ds(on) ? fast switching, low drive current ? ease of paralleling for added power ? small size ? available screened to mil-s-19500, tx, txv, s levels description this series of hermetic surface mount product features the latest advanced mosfet and packaging technology. they are ideally suited for military surface mount requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. part number v ds r ds(on) i d om6034nm 100v .065? 35a OM6035NM 200v .095? 30a om6036nm 500v 0.4? 15a om6037nm 1000v 3? 5a schematic om6036nm om6037nm maximum ratings at t c = 25 c om6034nm OM6035NM 3 drain 1 source 2 gate
3.5 - 82 om6034nm - om6037nm 3.5 electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om6034nm (100v) static p/n OM6035NM (200v) parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 100 v v gs = 0, bv dss drain-source breakdown 200 v v gs = 0, voltage i d = 250 a voltage i d = 250 a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 a i gss gate-body leakage (om6105) 500 na v gs = 12.8 v i gss gate-body leakage (om6106) 500 na v gs = 12.8 v i gss gate-body leakage (om6005) 100 na v gs = 20 v i gss gate-body leakage (om6006) 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 35 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 30 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 1.1 1.3 v v gs = 10 v, i d = 20 a v ds(on) static drain-source on-state 1.36 1.52 v v gs = 10 v, i d = 16 a voltage 1 voltage 1 r ds(on) static drain-source on-state .055 .065 ? v gs = 10 v, i d = 20 a r ds(on) static drain-source on-state .085 .095 ? v gs = 10 v, i d = 16 a resistance 1 resistance 1 r ds(on) static drain-source on-state .09 0.11 ? v gs = 10 v, i d = 20 a, r ds(on) static drain-source on-state 0.14 0.17 ? v gs = 10 v, i d = 16 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 9.0 10 s ( ? ) v ds 2 v ds(on) , i d = 20 a g fs forward transductance 1 10.0 12.5 s ( ? ) v ds 2 v ds(on) , i d = 16 a c iss input capacitance 2700 pf v gs = 0 c iss input capacitance 2400 pf v gs = 0 c oss output capacitance 1300 pf v ds = 25 v c oss output capacitance 600 pf v ds = 25 v c rss reverse transfer capacitance 470 pf f = 1 mhz c rss reverse transfer capacitance 250 pf f = 1 mhz t d(on) turn-on delay time 28 ns v dd = 30 v, i d ? 20 a t d(on) turn-on delay time 25 ns v dd = 75 v, i d ? 16 a t r rise time 45 ns r g = 5.0 ? , v gs = 10 v t r rise time 60 ns r g = 5.0 ? , v gs = 10 v t d(off) turn-off delay time 100 ns t d(off) turn-off delay time 85 ns t f fall time 50 ns t f fall time 38 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 40 a modified mospower i s continuous source current - 30 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 160 a the integral p-n i sm source current 1 - 120 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -40 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -30 a, v gs = 0 t rr reverse recovery time 400 ns t j = 150 c, i f = i s , t rr reverse recovery time 350 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ s dl f /ds = 100 a/ s 1 pulse test: pulse width 300 sec, duty cycle 2%. 1 pulse test: pulse width 300 sec, duty cycle 2%. g d s g d s ( ? ) ( ? )
3.5 - 83 om6034nm - om6037nm 3.5 electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om6036nm (500v) parameter min. typ. max. units test conditions bv dss drain-source breakdown 500 v v gs = 0, voltage i d = 250 a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 a i gss gate-body leakage (om6108) 500 na v gs = 12.8 v i gss gate-body leakage (om6008) 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c i d(on) on-state drain current 1 13 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 2.1 2.8 v v gs = 10 v, i d = 7.0 a voltage 1 r ds(on) static drain-source on-state 0.3 0.4 ? v gs = 10 v, i d = 7.0 a resistance 1 r ds(on) static drain-source on-state 0.66 0.88 ? v gs = 10 v, i d = 7.0 a, resistance 1 t c = 125 c dynamic g fs forward transductance 1 5.0 7.2 s ( ? ) v ds 2 v ds(on) , i d = 7.0 a c iss input capacitance 2600 pf v gs = 0 c oss output capacitance 280 pf v ds = 25 v c rss reverse transfer capacitance 40 pf f = 1 mhz t d(on) turn-on delay time 30 ns v dd = 210 v, i d ? 7.0 a t r rise time 46 ns r g = 5.0 ? , = v gs = 10 v t d(off) turn-off delay time 75 ns t f fall time 31 ns body-drain diode ratings and characteristics i s continuous source current - 13 a modified mospower (body diode) symbol showing i sm source current 1 - 52 a the integral p-n (body diode) junction rectifier. v sd diode forward voltage 1 - 1.4 v t c = 25 c, i s = -13 a, v gs = 0 t rr reverse recovery time 700 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ s 1 pulse test: pulse width 300 sec, duty cycle 2%. g d s g d s ( ? ) ( ? ) electrical characteristics: t c = 25 unless otherwise noted static p/n om6037nm (1000v) parameter min. typ. max. units test conditions bv dss drain-source breakdown 1000 v v gs = 0, voltage i d = 250 a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 a i gssf gate-body leakage forward 100 na v gs = 20 v, v ds = 0 i gssr gate-body leakage reverse -100 na v gs = - 20 v, v ds = 0 i dss zero gate voltage 0.25 ma v ds = max. rat., v gs = 0 drain current 1.0 ma v ds = 0.8 x max. rat., t c = 125 c i d(on) on-state drain current 5.0 a v ds > i d(on) x r ds(on) max., v gs = 10 v r ds(on) static drain-source on-state 3.0 ? v gs = 10 v, i d = 2.5 a resisitance 1 r ds(on) static drain-source on-state 6.0 ? v gs = 10 v, i d = 2.5 a resistance 1 t c = 100 c dynamic g fs forward transductance 1 4.0 s v ds = 25 v ds(on) , i d = 2.5 a c iss input capacitance 2600 pf v gs = 0 c oss output capacitance 350 pf v ds = 25 v c rss reverse transfer capacitance 150 pf f = 1 mhz t d(on) turn-on delay time 65 ns t r rise time 55 ns t r( v off) off-voltage rise time 62 ns t f fall time 25 ns body-drain diode ratings and characteristics i s continuous source current 6 a modified mospower (body diode) symbol showing i sm source current 2 24 a the integral p-n (body diode) junction rectifier. v sd diode forward voltage 1 2.5 v t c = 25 c, i s = 6 a, v gs = 0 t rr reverse recovery time 1100 ns i f = i s ,v dd = 100 v dl f /ds = 100 a/ s 1 pulse test: pulse width 300 sec, duty cycle 1.5%.
om6034nm-om6037nm 3.5 parameter om6034 om6035 om6036 om6037 units v ds drain-source voltage 100 200 500 1000 v v dgr drain-gate voltage (r gs = 1m?) 100 200 500 1000 v i d @ t c = 25c continuous drain current 30 25 11 4 a v gs continuous gate-source voltage 20 20 20 20 v v gsm gate-source voltage non-repetitive (t p 50 s) 40 40 40 40 v i dm pulsed drain current 1 105 60 65 17 a p d @ t c = 25c max. power dissipation 100 100 100 100 w p d @ t c = 100c max. power dissipation 35 35 35 35 w junction to case linear derating factor 1 1.0 1.0 1.0 1.0 w/c junction to ambient linear derating factor .025 .025 .025 .025 w/c t j operating and -55 to -55 to -55 to -55 to t stg storage temperature range 150 150 150 150 c lead temperature (at case for 5 seconds) 225 225 225 225 c absolute maximum ratings: (t c = 25c unless otherwise noted) r thjc junction-to-case 1.0 c/w r thja junction-to-ambient 40 c/w free air operation thermal resistance (maximum) at t a = 25c power derating pin connection mechanical outline 1 pulse test: pulse width 300 sec, duty cycle 2%. .500 .140 .415 .157 .015 .140 .140 .075 .075 .062 .375 .030 min. top view side view bottom view .625 12 3 pin 1: source pin 2: gate pin 3: drain 180 150 120 90 60 30 0 0 25 50 75 100 125 150 175 p d - power dissipation (watts) t c - case temperature (c) r jc = 1.0 c/w
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