copyright ? 2000 rev. 0.2,2000-12-15 www. microsemi . com mws11-gb11-xx ingap hbt gain block p review a microsemi company
this general purpose amplifier is a low cost, broadband rfic manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) process (mocvd). this rfic amplifier was designed as an easily cascadable 50 ohm gain block. the device is self-contained with 50 ohm input and output impedance. applications in- clude if and rf amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 ghz. this rfic amplifier is initially available in a plastic sot-89 3-pin package to handle p1db output power up to 19dbm (5v). the same rfic will be available later in an advanced microsemi gigamite? package, with significantly smaller footprint for applications where board space is at a premium. important: for the most current data, consult m i crosem i s website: http://www.microsemi.com
advanced ingap hbt dc to 6ghz single +5v supply small signal gain = 16db p1db = 19dbm (5v), f=1ghz sot-89 3-pin, & gigamite packages
broadband gain blocks if or rf buffer amplifiers driver stage for power amps final power amp for low to medium power applications broadband test equipment -1 0 -5 0 5 10 15 20 25 30 35 40 45 -2 0 -1 5 -1 0 - 5 0 5 1 0 1 5 pin (dbm ) gain (db), pout (dbm), current (a) 00 pout gain current f = 5 .7 g h z vcc = 5 v nominal current 20 m a
pk plastic sot-89 3 pin gigamite mws11gb11-s1 mws11gb11-g1 note: available in tape & reel. append the letter t to the part number. (i.e. msw11gb11-s89t) m m w w s s 1 1 1 1 - - g g b b 1 1 1 1
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