vishay siliconix tp0101k document number: 72692 s-83053-rev. b, 29-dec-08 www.vishay.com 1 p-channel 20-v (d-s) mosfet, low-threshold features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? esd protected: 3000 v applications ? drivers: relays, solenoids , lamps, hammers, displays, memories ? battery operated systems, dc/dc converters ? power supply converter circuits ? load/power switching-cell phones, pagers notes: a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board, t 10 s. notes: a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board, t 10 s. product summary v ds (v) r ds(on) ( ) i d (a) e - 20 0.65 at v gs = - 4.5 v - 0.58 0.85 at v gs = - 2.5 v - 0.5 g s d to p v ie w 2 3 to-236 (sot-23) 1 ordering information: marking code: k4ywl k4 = part nu m b er code for tp0101k y = year code w = week code l = lot tracea b ility d s g 100 tp0101k-t1-e3 (lead (p b )-free) TP0101K-T1-GE3 (lead (p b )-free and halogen-free) absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) b t a = 25 c i d - 0.58 a t a = 70 c - 0.46 pulsed drain current a i dm - 2 continuous source-drain (diode current) b i s - 0.3 power dissipation b t a = 25 c p d 0.35 w t a = 70 c 0.22 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limits unit thermal resistance, junction-to-ambient b r thja 357 c/ w
www.vishay.com 2 document number: 72692 s-83053-rev. b, 29-dec-08 vishay siliconix tp0101k notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t a = 25 c, unless otherwise noted parameter symbol test conditions limits min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 10 a - 20 v gate threshold voltage v gs(th) v ds = v gs , i d = - 50 a - 0.5 - 0.7 - 1.0 gate-body leakage i gss v ds = - 0 v, v gs = 4.5 v 5 a zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 1.2 a v ds - 5 v, v gs = - 2.5 v - 0.5 drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 0.58 a 0.42 0.65 v gs = - 2.5 v, i d = - 0.5 a 0.64 0.85 forward transconductance a g fs v ds = - 5 v, i d = - 0.58 a 1300 ms diode forward voltage a v sd i s = - 0.3 a, v gs = 0 v - 0.9 - 1.2 v dynamic b total gate charge q g v ds = - 6 v, v gs = - 4.5 v i d ? - 0.58 a 1400 2200 pc gate-source charge q gs 300 gate-drain charge q gd 250 gate resistance r g 150 tu r n - o n t i m e t d(on) v dd = - 6 v, r l = 10 i d ? - 0.58 a, v gen = - 4.5 v, r g = 6 25 35 ns t r 30 45 turn-off time t d(off) 55 85 t f 38 60
document number: 72692 s-83053-rev. b, 29-dec-08 www.vishay.com 3 vishay siliconix tp0101k typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 5 thr u 3 v 1 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 2 v 1.5 v 2.5 v - on-resistance ( ) r ds(on) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d - drain c u rrent (a) v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 v ds = 6 v i d = 0.6 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j = - 55 c 125 c 25 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 25 50 75 100 125 150 175 200 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 0.6 a t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 72692 s-83053-rev. b, 29-dec-08 vishay siliconix tp0101k typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage single pulse power, junction-to-ambient 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 t j = 150 c t j = 25 c 4 0.1 0.001 v sd -) v ( e g a t l o v n i a r d - o t - e c r u o s - so u rce c u rrent (a) i s 1 0.01 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 50 a v ariance ( v ) v gs(th) t j - temperat u re (c) 0 1 5 po w er (w) time (s) 3 4 0 0 6 110 0.1 0.01 2 100 on-resistance vs. gate-to-source voltage gate current vs. gate-source voltage safe operating area, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345 i d = 0.6 a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0.001 100 100 000 0.1 1 10 1000 - gate c u rrent ( a) i gss 0 26 8 10 t j = 25 c t j = 150 c 0.01 4 v gs - gate-to-so u rce v oltage ( v ) 10 000 10 0.1 0.1 1 10 100 0.001 1 t a = 25 c single p u lse - drain c u rrent (a) i d 0.01 i dm limited i d(on) limited b v dss limited 10 ms 100 ms dc 1 s 10 s 1 ms r * ds(on) limited v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified
document number: 72692 s-83053-rev. b, 29-dec-08 www.vishay.com 5 vishay siliconix tp0101k typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72692 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are wa v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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