1 power transistors 2sb951, 2sB951A silicon pnp epitaxial planar type darlington for midium-speed switching complementary to 2sd1277 and 2sd1277a n features l high foward current transfer ratio h fe l high-speed switching l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C60 C80 C60 C80 C7 C12 C8 45 2 150 C55 to +150 unit v v v a a w ?c ?c 2sb951 2sB951A 2sb951 2sB951A t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 * h fe2 v ce(sat) v be(sat) f t t on t stg t f conditions v cb = C60v, i e = 0 v cb = C80v, i e = 0 v eb = C7v, i c = 0 i c = C30ma, i b = 0 v ce = C3v, i c = C4a v ce = C3v, i c = C8a i c = C4a, i b = C8ma i c = C4a, i b = C8ma v ce = C10v, i c = C1a, f = 1mhz i c = C4a, i b1 = C8ma, i b2 = 8ma, v cc = C50v min C60 C80 2000 500 typ 20 0.5 2 1 max C100 C100 C2 10000 C1.5 C2 unit m a ma v v v mhz m s m s m s 2sb951 2sB951A 2sb951 2sB951A * h fe1 rank classification rank q p h fe1 2000 to 5000 4000 to 10000 unit: mm internal connection 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1 b c e
2 power transistors 2sb951, 2sB951A p c ta i c v ce v ce(sat) i c v ce(sat) i c v be(sat) i c v be(sat) i c h fe i c c ob v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (4) (3) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 5 ? ? ? ? 0 ? ? ? ? ? ? ? ? i b =?.0ma ?.8ma ?.6ma ?.4ma ?.2ma ?.0ma ?0.8ma ?0.6ma ?0.4ma ?0.2ma t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.1 1 ?0 ?0.3 3 ?0.1 ?00 ?0 ? ?0.3 ? ?0 i c /i b =500 t c =100?c ?5?c 25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0 ?0.3 3 ?0.1 ?00 ?0 ? ?0.3 ? ?0 (1) i c /i b =250 (2) i c /i b =500 (3) i c /i b =1000 t c =25?c (1) (2) (3) collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 ? ?0 ?0.3 ? ?0.1 ?00 ?0 ? ?0.3 ? ?0 i c /i b =500 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.1 1 ?0 ?0.3 3 ?0.1 ?00 ?0 ? ?0.3 ? ?0 (1) (2) (3) (1) i c /i b =250 (2) i c /i b =500 (3) i c /i b =1000 t c =25?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.1 1 ?0 ?0.3 3 10 2 10 5 10 4 10 3 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.1 ? ?0 ?00 ?0.3 ? ?0 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 t=1ms 10ms i cp i c 2sB951A 2sb951 non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sb951, 2sB951A r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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