triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 50 ghz wideband analog attenuator TGL4203-EPU key features and performance ? 0.25um 3mi mmw phemt ? broadband response dc to > 50 ghz ? 2db typical insertion loss ? 17db variable attenuation range ? 15db typical return loss ? bias: -1v to 0v primary applications ? point to point radio ? fiber optic ? wideband military & space chip dimensions 1.7mm x 0.8 mm x 0.1mm typical electrical characteristics -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) in sertio n l o ss (d b ) -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) r eturn loss s11 (db) 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) a ttenuation (db ) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) g roup d elay (psec) v1 / v2 ref 0.000 / -1.000 1db -0.549 / -0.838 2db -0.606 / -0.752 3db -0.635 / -0.708 4db -0.659 / -0.680 5db -0.673 / -0.651 6db -0.679 / -0.626 7db -0.689 / -0.597 8db -0.705 / -0.578 9db -0.713 / -0.549 10db -0.719 / -0.518 11db -0.730 / -0.489 12db -0.744 / -0.461 13db -0.762 / -0.430 14db -0.794 / -0.392 15db -0.800 / -0.327 16db -0.851 / -0.267 17db -0.900 / -0.203 bias voltages optimized for flatness of attenuation with respect to reference over frequency
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 1/ symbol parameter value notes attenuation control voltage range -5 to +1 v | i g1 | gate 1 supply current 2.2 ma | i g2 | gate 2 supply current 19.8 ma p in input continuous wave power > 30dbm p d power dissipation tbd t ch operating channel temperature 150 0 c2/ 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ these ratings apply to each individual fet. TGL4203-EPU table ii electrical characteristics (ta = 25 o c nominal) parameter test conditions typ unit attenuation control voltage dc ~ 50 ghz -1 to 0 v il insertion loss dc ~ 50 ghz 2 db maximum attenuation dc ~ 50 ghz 17 db irl input return loss dc ~ 50 ghz 15 db orl output return loss dc ~ 50 ghz 15 db pin1db input power @ 1db atten. change 5 to 25 ghz * dbm group delay variation dc ~ 50 ghz +/-5 psec max. insertion loss ripple (peak to peak) dc ~ 50 ghz 0.5 db * pin1db varies depending on attenuation state and frequency. see graphs on page 3 for details
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGL4203-EPU typical pin1db vs attenuation ta = 25 0 c nominal 0 3 6 9 12 15 18 21 24 27 30 0123456789101112131415 attenuation (db) input power @ 1db attenuation change (dbm) 5 ghz 10 ghz 15 ghz 20 ghz 25 ghz
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGL4203-EPU typical attenuator input toi vs. attenuation 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) iip3 (dbm) 0db 3db 6db 10db 17db pin = 0dbm 0 5 10 15 20 25 30 35 -10-8-6-4-20246810 pin/tone (dbm) iip3 (dbm) 0db 3db 6db 10db 17db freq = 10ghz
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGL4203-EPU typical attenuator input toi vs. attenuation 0 5 10 15 20 25 30 35 -10-8-6-4-20246810 pin/tone (dbm) iip3 (dbm) 0db 3db 6db 10db 17db freq = 20ghz 0 5 10 15 20 25 30 35 -10-8-6-4-20246810 pin/tone (dbm) iip3 (dbm) 0db 3db 6db 10db 17db freq = 30ghz
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGL4203-EPU typical measurement over temperature 5 deg c 25 deg c 75 deg c 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) group delay (psec) -5 0 5 10 15 20 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) attenuation (db) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) input r eturn loss (db )
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGL4203-EPU mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice q1 r1 r1 r2 r3 r3 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 r4 q1 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 q2 rfin rfout v1 v2 r1 = 40 ohms r3 = 400 ohms r4 = 3k ohms c1 = 1 pf c1 c1 v1 controls series fets q1 v2 controls shunt fets q2 dc schematic TGL4203-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGL4203-EPU chip assembly diagram rf ports must be dc blocked
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information january 18, 2005 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGL4203-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (30 seconds max) . an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c.
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