a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ceo i c = 50 ma 33 v bv ces i c = 100 ma 70 v bv ebo i e = 5.0 ma 4.0 v i ces v ce = 28 v 30 ma h fe v ce = 5.0 v i c = 10 a 10 100 --- c ob v cb = 28 v f = 1.0 mhz --- 270 --- pf g p c vswr v ce = 28 v p in = 2.5 w f = 30 mhz 16 65 :1 db % --- imd p out = 100 w (pep) -32 dbc npn silicon rf power transistor S100-28 description: the asi 100-28 is designed for hf linear applications up to 30 mhz. features: ? p g = 16 db min. at 100 w/30 mhz ? high linear power output ? imd = -32 dbc max. at 100 w (pep) ? omnigold ? metalization system maximum ratings i c 20 a v ces 70 v v ceo 33 v v ebo 4.0 v p diss 250 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 0.7 c/w package style .500 4l flg minimum inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 b c d e f g a maximum .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 h .003 / 0.08 .007 / 0.18 dim k l i j .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 h i k j .112x45 full r c e b g d f a l ?.125 nom. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11 e c b e
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