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high-performance products ?ate 1 www.semtech.com edge670 500 mhz window comparator description features functional block diagram revision 3 / july 20, 2001 preliminary the edge670 is a monolithic ate pin electronics comparator manufactured in a high-performance complementary bipolar process. in automatic test equipment, the edge670 offers a window comparator suitable for very fast, bidirectional channels in memory, vlsi, and mixed-signal test systems. the 670 is capable of tracking very fast edges and passing sub-ns pulses over an 11v common mode range while maintaining excellent timing accuracy. the differential digital outputs are adjustable to accommodate ecl levels, pecl levels, or custom levels to interface directly with a cmos asic. the edge670 is pin compatible with the edge672, except no load is present. qa* vinp cva cvb qa ipd qb qb* pecl C + C + 11v common mode range input tracking > 6 v/ns with < 25 ps dispersion low leakage (<1 a) input power down mode (for extremely low leakage operation (<250 na)) ? small footprint (32 pin tqfp)
2 ? 2000 semtech corp. www.semtech.com high-performance products ?ate edge670 preliminary pin description e m a n n i pe m a n n i p e m a n n i p e m a n n i pe m a n n i p# n i p# n i p # n i p # n i p# n i pn o i t p i r c s e dn o i t p i r c s e d n o i t p i r c s e d n o i t p i r c s e dn o i t p i r c s e d r o t a r a p m o cr o t a r a p m o c r o t a r a p m o c r o t a r a p m o cr o t a r a p m o c 9 1p n i v h t o b o t s t c e n n o c p n i v e h t . r o t a r a p m o c w o d n i w e h t r o f t u p n i e g a t l o v g o l a n a . s r o t a r a p m o c e h t f o s t u p n i ) + ( g n i t r e v n i - n o n e h t f o 5 , 4 7 , 8 * a q / a q * b q / b q . r o t a r a p m o c w o d n i w e h t m o r f s n i p t u p t u o l a i t n e r e f f i d 6 1 , 5 1b v c , a v c w o d n i w e h t r o f s l e v e l w o l d n a h g i h e h t t e s o t d e s u s n i p t u p n i g o l a n a . r o t a r a p m o c 4 1d p i e h t f o e d o m n w o d r e w o p t u p n i e h t s e t a v i t c a h c i h w t u p n i e l b i t a p m o c l t t . r o t a r a p m o c w o d n i w r e w o pr e w o p r e w o p r e w o pr e w o p 8 1 , 6e e v. y l p p u s r e w o p e v i t a g e n c c v0 2 , 7 1 , 9 , 3. y l p p u s r e w o p e v i t i s o p d n g0 1. d n u o r g e c i v e d l c e p1 1. s l e v e l t u p t u o r o t a r a p m o c e h t s t e s h c i h w y l p p u s r e w o p g o l a n a s n i p t s e ts n i p t s e t s n i p t s e t s n i p t s e ts n i p t s e t 2 1 3 1 e d o h t a c e d o n a e i d e h t r o t i n o m o t d e s u s e d o i d f o g n i r t s s e i r e s a f o s d n e e d o n a d n a e d o h t a c . e r u t a r e p m e t
3 ? 2000 semtech corp. www.semtech.com high-performance products ?ate preliminary edge670 pin description (continued) n/c n/c n/c n/c vcc vinp vee vcc n/c n/c vcc qa qa* vee qb* qb n/c n/c n/c n/c n/c n/c n/c n/c vcc gnd pecl cathode anode ipd cva cvb 32 25 17 9 1
4 ? 2000 semtech corp. www.semtech.com high-performance products ?ate edge670 preliminary circuit description window comparator introduction the edge670 has two comparators connected on-chip as a window comparator to determine whether the dut is in a high, low, or indeterminate state. power supply sequencing the following sequence should be used when powering up the edge670. 1. vee 2. vcc 3. analog inputs (vinp , cva, cvb) functionality the vinp pin is tied to the positive inputs of both comparators (see figure 1). input condition output condition vinp > cva qa = high; qa* = low vinp < cva qa = low; qa* = high vinp > cvb qb = high; qb* = low vinp < cvb qb = low; qb* = high figure 1. comparator functionality thresholds cva and cvb are the two comparator threshold levels. these inputs are high impedance voltage controlled inputs that determine at which vinp input voltage the comparator will change states. hysteresis hysteresis is a measure of the change in threshold voltage as a function of the comparator output state (see figure 2). typically, hysteresis is used to prevent multiple comparator output transitions due to slow input slew rates in a noisy environment. these slower inputs remain in the transition region for longer periods of time, allowing any noise present to cause repeated threshold crossings. the edge670 is designed with 4 mv of hysteresis. this hysteresis is non-adjustable and requires no external support. the amount of hysteresis was chosen to allow stable and reliable transitions in most system environments, without noticeably affecting the comparator performance. figure 2. hysteresis the effects of hysteresis are visible in two categories - offset voltage and propagation delay. the amount of hysteresis must be large enough to overcome the system noise floor, yet small enough not to increase offset voltage effects significantly. input protection the vinp pin has an internal 50 ? series resistor and two over-voltage diodes capable of shunting up to 100 ma (see figure 3) and, therefore, requires no external protection circuitry. the over-voltage input range that the comparator can withstand is determined by the power supply rails and the following equations: vee ?.7 ? (100 ma * 50 ? ) < vinp < vcc + .7 + (100 ma * 50 ? ) or vee ?5.7v < vinp < vcc + 5.7v. qa* vinp cva cvb qa qb qb* C + C + actual threshold voltage programmed threshold voltage 2 mv 4 mv
5 ? 2000 semtech corp. www.semtech.com high-performance products ?ate preliminary edge670 circuit description (continued) figure 3. input protection for a wider protected input range, an additional external series resistor may be added. comparator pecl output capability pecl is a variable analog voltage power supply that determines the common mode voltage of the comparator digital outputs. with pecl connected to ground, the edge670 generates standard differential ecl outputs. however, the outputs will track the pecl input, and remaining one diode drop below it as pecl is varied between ground and +5v. by setting pecl appropriately, a fully differential comparator output may interface directly to a cmos asic without any translators. input power down the edge670 comparator has a mechanism where it can drastically reduce the input bias current flowing into the vinp pin, while still maintaining a functional comparator. in this mode, however, the comparator slows down significantly and can no longer track fast edges, in particular, fast falling edges. the ipd pin is a ttl compatible input which controls the two modes. with ipd = low, the comparator is in its normal high speed mode, supporting maximum ac performance. with ipd = high, the comparator is in power down mode. the input bias current decreases to < 100 na. the comparator still functions, but can track edges only up to 25 mv/ns. thermal monitor the edge670 includes an on-chip thermal monitor accessible through the cathode and anode. these nodes connect to five diodes in series (see figure 4) and may be used to accurately measure the junction temperature at any time. an external bias current of 100 a is injected through the string, and the measured voltage corresponds to a specific junction temperature with the following equation: tj[ c] = {(anode - cathode)/5 - .7} / (-.00208). figure 4. thermal diode string bias current temperature coefficient = C10 mv/ ? c anode cathode vinp vcc vee C + C + 50
6 ? 2000 semtech corp. www.semtech.com high-performance products ?ate edge670 preliminary circuit description (continued) delay dispersion given a constant temperature and voltage environment (within the bounds of the recommended operating conditions), the propagation delay dispersion (tsd) indicates how much variation in propagation delay time can be expected for one comparator over a wide range of input conditions. thus, the propagation delay of a comparator can be described as: tpd tsd where tpd is the nominal delay that will vary with temperature and voltage, and part to part. in many ate applications, tpd is calibrated or compensated for on a channel-by-channel basis. tsd includes factors that normally may be difficult to calibrate, and therefore directly impact overall system timing accuracy. propagation delay dispersion is defined as the maximum deviation of the propagation delay taken at the eight measurement points (see figure 10) for 1v and 3v input signals described below. the parameters of interest are: ? slew rate ? edge direction ? overdrive ? common mode voltage. low dispersion numbers indicate the accuracy of a system under a variety of input conditions, and are an important figure of merit for any comparator. while not production tested, the edg670 is designed specifically to exhibit low dispersion. the typical edge670 will show less than 25 ps tpd dispersion. 3 v 2.7 v .3 v 0 v -0.8 v -1.0 v -1.6 v -1.8 v 1v / ns slew rate input threshold levels 3v / ns slew rate 1v 1v / ns slew rate input threshold levels 3v / ns slew rate 3 v figure 10. dispersion measurement conditions
7 ? 2000 semtech corp. www.semtech.com high-performance products ?ate preliminary edge670 package information pin descriptions b d 3 4 4 e n / 4 tips 4 x e / 2 d / 2 see detail "a" e 0.20 c a C b d top view d1 e1 5 7 5 7 4 x d1 / 2 e1 / 2 0.20 h a C b d bottom view c o o 32-pin tqfp 7mm x 7 mm
8 ? 2000 semtech corp. www.semtech.com high-performance products ?ate edge670 preliminary package information (continued) 3 detail "a" e / 2 b 0 min. 0.08 / 0.20 r. gauge plane 0.25 0 C 7 l c.08 r. min. 0.20 min. 1.00 ref. datum plane C h C a1 0.05 a2 C s detail "b" 9 .. 888 6 ' / 7. 89 $.# $ (*((*( (*((*- 2 2 .6 , .9 (*( 6 . 55 (*( ### ''9 ''9 .' notes: 1. all dimensions and tolerances conform to ansi y14.5-1982. 2. datum plane -h- located at mold parting line and coincident with lead, where lead exits plastic body at bottom of parting line. 3. datums a-b and -d- to be determined at centerline between leads where leads exit plastic body at datum plane -h-. 4. to be determined at seating plane -c-. 5. dimensions d1 and e1 do not include mold protrusion. 6. ??is the total # of terminals. 7. these dimensions to be determined at the datum plane -h-. 8. package top dimensions are smaller than bottom dimensions and top of package will not overhang bottom of package. 9. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. dambar cannot be located on the lower radius or the foot. 10. controlling dimension: millimeter. 11. maximum allowable die thickness to be assembled in this package family is 0.30 millimeters. 12. this outline conforms to jedec publication 95, registration mo-136, variations ac, ae, and af. c ac a c a c ac a m y sm y s m y s m y sm y sn i mn i m n i m n i mn i mm o nm o n m o n m o nm o nx a mx a m x a m x a mx a me t o ne t o n e t o n e t o ne t o n a0 6 . 1 1 a5 0 . 00 1 . 05 1 . 0 2 a5 3 . 10 4 . 15 4 . 1 dc s b 0 0 . 94 1 dc s b 0 0 . 78 , 7 ec s b 0 0 . 94 1 ec s b 0 0 . 78 , 7 l5 4 . 00 6 . 05 7 . 0 m5 1 . 0 n2 3 ec s b 0 8 . 0 b0 3 . 07 3 . 05 4 . 09 1 b0 3 . 05 3 . 00 4 . 0 c c c0 1 . 0 d d d0 2 . 0 jedec variation
9 ? 2000 semtech corp. www.semtech.com high-performance products ?ate preliminary edge670 recommended operating conditions absolute maximum ratings r e t e m a r a pr e t e m a r a p r e t e m a r a p r e t e m a r a pr e t e m a r a pl o b m y sl o b m y s l o b m y s l o b m y sl o b m y sn i mn i m n i m n i mn i mp y tp y t p y t p y tp y tx a mx a m x a m x a mx a ms t i n us t i n u s t i n u s t i n us t i n u y l p p u s r e w o p e v i t i s o pc c v5 . 85 . 1 10 . 2 1v y l p p u s r e w o p e v i t a g e ne e v5 . 8 -2 . 5 -5 . 4 -v y l p p u s g o l a n a l a t o te e v - c c v0 . 3 17 . 6 10 . 7 1v y l p p u s e v i t i s o p t u p t u o r o t a r a p m o cl c e p03 . 30 . 5v r e t e m a r a pr e t e m a r a p r e t e m a r a p r e t e m a r a pr e t e m a r a pl o b m y sl o b m y s l o b m y s l o b m y sl o b m y sn i mn i m n i m n i mn i mp y tp y t p y t p y tp y tx a mx a m x a m x a mx a ms t i n us t i n u s t i n u s t i n us t i n u ) d n g o t e v i t a l e r ( y l p p u s e v i t i s o pc c v0 0 . 3 1 +v ) d n g o t e v i t a l e r ( y l p p u s e v i t a g e ne e v0 . 9 -0v y l p p u s r e w o p l a t o te e v - c c v0 . 0 2 +v y l p p u s e v i t i s o p t u p t u o r o t a r a p m o cl c e p0 0 . 6 +v s t n e r r u c t u p t u o l a t i g i d* b q , b q , * a q , a q00 5a m d l o h s e r h t o t t u p n i r o t a r a p m o ca v c - p n i v b v c - p n i v 3 1 - 3 1 - 3 1 + 3 1 + v v s e g a t l o v g o l a n ab v c , a v ce e vc c vv e r u t a r e p m e t g n i t a r e p o t n e i b m aa t5 5 -5 4 1 + o c e r u t a r e p m e t e g a r o t ss t5 6 -0 5 1 + o c e r u t a r e p m e t n o i t c n u jj t0 5 1 + o c ) s r u o h 0 3 < ( e r u t a r e p m e t s s e c o r p 0 6 1 + o c stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at these, or any other conditions beyond those listed in the operational sections of this specification are not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
10 ? 2000 semtech corp. www.semtech.com high-performance products ?ate edge670 preliminary dc characteristics r e t e m a r a pl o b m y sn i mp y tx a ms t i n u e g a t l o v d l o h s e r h tb v c , a v c9 . 2 + e e v9 . 2 - c c vv e g n a r e g a t l o v t u p n ip n i v9 . 2 + e e v9 . 2 - c c vv e g a t l o v l a i t n e r e f f i d t u p n ib , a v c - p n i v1 1 -1 1 +v t n e r r u c t u p n i d l o h s e r h t0 5 -0 5 +a t n e r r u c t u p n i n i p d p i0 5 1 -0 1 +a ) 1 e t o n ( t n e r r u c t u p n i p n i v 0 = d p i n o i t a r e p o l a m r o n 1 = d p i e d o m d p i s a i b i s a i b i 1 - 0 5 2 - 1 + 0 5 2 + a a n e g a t l o v t e s f f os o v0 5 -0 5 +v m o i t a r n o i t c e j e r e d o m n o m m o cr r m c0 6b d o i t a r n o i t c e j e r y l p p u s r e w o pr r s p0 6b d s i s e r e t s y h r o t a r a p m o c 4v m g n i w s t u p t u o l a t i g i d| * a q - a q | | * b q - b q | 0 0 6 0 0 6 0 0 7 0 0 7 0 0 0 , 1 0 0 0 , 1 v m v m y l p p u s r e w o p t n e r r u c y l p p u s e v i t i s o pc c i0 34 40 6a m t n e r r u c y l p p u s e v i t a g e ne e i0 40 60 8a m ) 2 e t o n ( t n e r r u c y l p p u s l c e pd d i5 56 15 9a m dc test conditions (unless otherwise specified): "recommended operating conditions". note 1: tested at +7v and 1v. note 2: assumes no digital output current
11 ? 2000 semtech corp. www.semtech.com high-performance products ?ate preliminary edge670 ac characteristics ordering information contact information semtech corporation high-performance division 10021 willow creek rd., san diego, ca 92131 phone: (858)695-1808 fax (858)695-2633 r e t e m a r a pr e t e m a r a p r e t e m a r a p r e t e m a r a pr e t e m a r a pl o b m y sl o b m y s l o b m y s l o b m y sl o b m y sn i mn i m n i m n i mn i mp y tp y t p y t p y tp y tx a mx a m x a m x a mx a ms t i n us t i n u s t i n u s t i n us t i n u ) 2 , 1 s e t o n ( y a l e d n o i t a g a p o r pd p t0 . 10 . 20 . 4s n ) 2 e t o n ( n o i s r e p s i d y a l e d n o i t a g a p o r p v m 0 0 8 v 3 v 5 0 0 1 - 0 0 1 - 0 0 1 - 5 2 < 5 2 < 5 2 < 0 0 1 + 0 0 1 + 0 0 1 + s p s p s p ) 2 e t o n ( g n i k c a r t e t a r w e l s t u p n i 0 = d p i 1 = d p i 0 . 5 5 2 0 . 6s n / v s n / v m e c n a t i c a p a c t u p n in i c5 . 1f p ) % 0 8 o t % 0 2 ( s e m i t l l a f d n a e s i r t u p t u of t , r t0 5 2s p ) 2 e t o n ( h t d i w e s l u p m u m i n i m 5 . 1s n dc test conditions (unless otherwise specified): "recommended operating conditions". note 1: assumes normal operating mode of ipd = 0. note 2: guaranteed by characterization. this parameter is not production tested r e b m u n l e d o mr e b m u n l e d o m r e b m u n l e d o m r e b m u n l e d o mr e b m u n l e d o me g a k c a pe g a k c a p e g a k c a p e g a k c a pe g a k c a p f t c 0 7 6 ep f q t m m 7 x m m 7 n i p 2 3 ) ) y l n o r o t a r a p m o c ( e i d 0 7 6 ( f t c 0 7 6 m v ed r a o b n o i t a u l a v e 0 7 6 e g d e
12 ? 2000 semtech corp. www.semtech.com high-performance products ?ate edge670 preliminary revision history # e g a pe m a n n o i t c e sn o i s i v e r s u o i v e r pn o i s i v e r t n e r r u c 4n o i t p i r c s e d t i u c r i c : d d a g n i c n e u q e s y l p p u s r e w o p n o i t c e s current revision: july 20, 2001 previous revision: march 5, 2001 # e g a pe m a n n o i t c e sn o i s i v e r s u o i v e r pn o i s i v e r t n e r r u c 5n o i t p i r c s e d t i u c r i c 3 e r u g i f e t a d p u current revision: march 5, 2001 previous revision: august 12, 2000

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