solid state devices, inc. sft5666/39 features: data sheet #: maximum ratings symbol units value v ebo 6 volts emitter-base voltage v cbo 200 volts collector-base voltage i c 5 collector current collector-emitter voltage v ceo 180 amps volts o c w o c/w ? high performance replacement for 2n5666 ? radiation tolerant ? faster switching, t ( on) < 150ns ? higher frequency, ft > 30mhz ? higher gain, 40 @ 5a ? lower saturation voltage, 1.5v @ 5a ? 200 o c operating, gold eutectic die attach ? pnp compliment available - contact the factory to-39 5 amp 180 volts high speed npn transistor operating and storage temperature t j, t stg -65 to +200 15 thermal resistance, junction to case r 0 jc 20 total device dissipation @ t c =100 o c p d i b 1 base current amps electrical characteristics symbol units min max v 180 - bv ceo collector-emitter breakdown voltage (i c =30ma dc ) v 200 - collector-base breakdown voltage (i c =200ua dc ) v 6- bv ebo emitter-base breakdown voltage (i e =200ua dc ) m a -2 i cbo collector cutoff current (v cb =180v dc ) m a -10 i ceo collector cutoff current (v ce =120v dc ) bv cbo designer's data sheet 14830 valley view avenue * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. tr0027a
solid state devices, inc. sft5666/39 case outline: to-39 14830 valley view avenue * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 min max electrical characteristics symbol units m a emitter cutoff current (v eb =6v dc ) - i ebo 1 250 dc current gain * (i c =0.5a dc , v ce =2v dc ) (i c =1.0a dc , v ce =5v dc ) (i c =2.0a dc , v ce =5v dc ) (i c =3.0a dc , v ce =5v dc ) (i c =5.0a dc , v ce =5v dc ) 40 40 40 40 30 0.40 1.5 collector-emitter saturation voltage * 5a 5v mins (i c =3.0a dc , i b =300ma dc ) (i c =5.0a dc , i b = 1a) v ce(sat) v dc h fe base-emitter voltage * (i c =5.0a dc , ibc =3a, ib = .3a) (ib = 1a) - 1.2 1.5 v dc v be (sat) current gain bandwidth product (i c =.5a dc , v ce =10v dc, f =10mhz) 30 - mhz ft 120 pf output capacitance (v cb =30v dc , i e =0a dc, f =1.0mhz) - c ob (v cc =30v dc , i c =1.0a dc , v eb(off) =3.7v dc , i b1 =i b2 =50ma dc ) turn off time *pulse test: pulse width = 300us, duty cycle = 2% t (on) 150 ns t (off) 1500 ns turn on time * *collector hot to case
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