? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?5 march 1, 2000-00 single channel il66 dual channel ild66 quad channel ilq66 photodarlington optocoupler features internal rbe for high stability current transfer ratio is tested at 2.0 ma and 0.7 ma input il/ild/ilq66 series: ?, 100% min. at i f =2.0 ma, v ce =10 v ?, 300% min. at i f =2.0 ma, v ce =10 v ?, 400% min. at i f =0.7 ma, v ce =10 v ?, 500% min. at i f =2.0 ma, v ce =5.0 v four available ctr categories per package type ?v ceo >60 v standard dip packages underwriters lab file #e52744 vde 0884 available with option 1 description il66, ild66, and ilq66 are optically coupled iso- lators employing gallium arsenide infrared emit- ters and silicon photodarlington detectors. switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. maximum ratings emitter each channel peak reverse voltage .................................... 6.0 v continuous forward current ........................ 60 ma power dissipation at 25 c......................... 100 mw derate linearly from 25 c ................... 1.33 mw/ c detector (each channel) power dissipation at 25 c ambient .......... 150 mw derate linearly from 25 c ..................... 2.0 mw/ c package isolation test voltage (t=1.0 sec.) ......... 5300 v rms total package power dissipation at 25 c il66.......................................................... 250 mw ild66 ....................................................... 400 mw ilq66....................................................... 500 mw derate linearly from 25 c il66...................................................... 3.3 mw/ c ild66 ................................................. 5.33 mw/ c ilq66................................................. 6.67 mw/ c creepage .................................................... 7 min clearance .................................................... 7 min comparative tracking index .............................175 isolation resistance v io =500 v, t a =25 c............................... 10 12 ? v io =500 v, t a =100 c............................. 10 11 ? storage temperature................... ?5 c to +125 c operating temperature ............... ?5? to +100 c lead soldering time at 260 c ....................10 sec. v de .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 9 .300 .347 (7.62 8.81) 4 typ. pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3 9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3 9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) 1 2 3 6 5 4 anode cathode nc 8 7 6 5 emitter collector collector emitter anode cathode cathode anode 1 2 3 4 emitter collector collector emitter emitter collector collector emitter anode cathode cathode anode anode cathode cathode anode 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 dimensions in inches (mm) single channel dual channel quad channel
? 2001 in neon technologies corp. optoelectronics division san jose, ca il/ild/ilq66 www.in neon.com/opto 1-888-in neon (1-888-463-4636) 2 96 march 1, 2000-00 electrical characteristics, t a =25 c parameter symbol min. typ. max. unit condition gaas emitter forward voltage v f 1.25 1.5 v i f =20 ma reverse current i r 0.1 10 a v r =6.0 v capacitance c 0 25 pf v r =0 v photodarlington breakdown voltage collector-emitter bv ceo 60 v i c =1.0 ma, i f =0 collector-base (il66) bv cbo 60 i c =10 a leakage current, collector-emitter i ceo 1.0 100 na v ce =50 v, i f =0 capacitance, collector-emitter 3.4 pf v ce =10 v coupled characteristics current transfer ratio il/ild/ilq66-1 ctr 100 400 % i f =2.0 ma, v ce =10 v il/ild/ilq66-2 300 500 i f =2.0 ma, v ce =10 v il/ild/ilq66-3 400 500 i f =0.7 ma, v ce =10 v il/ild/ilq66-4 500 750 i f =2.0 ma, v ce =5.0 v saturation voltage, collector-emitter v ce sat 0.9 1.0 v i c =10 ma, i f =10 ma rise time -1, -2, -4 t r 200 s v cc =10 v fall time -1, -2, -4 t f 200 i f =2.0 ma, r l =100 ? rise time -3 t r 200 i f =0.7 ma fall time -3 t f 200 v cc =10 v, r l =100 ? figure 1. forward voltage versus forward current figure 2. normalized non-saturated and saturated ctr ce versus led current 100 10 1 .1 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 i f - forward current - ma v f - forward voltage - v t a =25 c t a =100 c t a =-55 c 100 10 1 .1 2.0 1.5 1.0 0.5 0.0 v ce = 1 v v ce = 5 v i f - led current - ma nctrce - normalized ctrce normalized to: t a = 25 c v ce = 5 v i f = 2 ma figure 3. normalized non-saturated and saturated ctr ce versus led current figure 4. non-saturated and saturated collector emitter current versus led current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 .1 1 10 100 1000 vce = 5 v vce = 1 v if - led current - ma nctrce - normalized ctrce ta = 25? vce = 5 v if = 10 m a normalized to: .1 1 10 100 10000 1000 100 10 1 .1 .01 .001 v ce = 5 v v ce = 1 v i f - led current - ma i ce - collector-emitter current - ma
? 2001 in neon technologies corp. optoelectronics division san jose, ca il/ild/ilq66 www.in neon.com/opto 1-888-in neon (1-888-463-4636) 2 97 march 1, 2000-00 figure 9. low/high propagation delay versus collector load resistance and led current figure 10. switching waveform figure 11. switching schematic 0 5 10 15 20 0 25 50 75 100 125 150 220 ? 2k ? 10k ? if - led current - ma tplh - low/high propagation delay - ? ta = 25? vcc = 5 v vth = 1.5 v i f t r v o t d t s t f t phl t plh v th =1.5 v v o r l v cc =10 v f=10 khz, df=50% i f figure 5. collector-base photocurrent versus led current figure 6. collector-emitter current versus led current figure 7. non-saturated and saturated hfe versus led current figure 8. high/low propagation delay versus collector load resistance and led current .1 1 1 0 10 0 ta = 25? if - led current - ma icb - photocurrent- ? .1 1 1 0 100 1000 i b - base current - s i ce - collector-emitter current - ma .1 1 10 100 1000 10000 1000 100 10 1 .1 .01 .001 v ce = 1 v v ce = 5 v t a = 25 c .1 1 10 100 1000 25000 20000 15000 10000 5000 0 v ce = 1 v i b - base current - a hfe - forward gain t a = 25 c v ce = 5 v 0 5 10 15 20 0 1 0 2 0 3 0 4 0 5 0 220 ? 10k ? g if - led current - ma tphl - high/low propagation delay - ? ta = 25? vcc = 5 v vth = 1.5 v
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