1 ) mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschlu? 2 ) tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 26 01.11.2003 4 3 2 1 3 0.1 6.5 0.2 0.7 3.25 2.3 7 0.3 1.65 3.5 0.2 bcp 54, bcp 55, bcp 56 general purpose transistors npn surface mount si-epitaxial planartransistors si-epitaxial planartransistoren fr die oberfl?chenmontage npn power dissipation ? verlustleistung 1.3 w plastic case sot-223 kunststoffgeh?use weight approx. ? gewicht ca. 0.04 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert dimensions / ma?e in mm 1 = b 2, 4 = c 3 = e standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25 c) grenzwerte (t a = 25 c) bcp 54 bcp 55 bcp 56 collector-emitter-voltage b open v ce0 45 v 60 v 80 v collector-base-voltage e open v cb0 45 v 60 v 100 v emitter-base-voltage c open v eb0 5 v power dissipation ? verlustleistung p tot 1.3 w 1 ) collector current ? kollektorstrom (dc) i c 1 a peak collector current ? koll.-spitzenstrom i cm 1.5 a peak base current ? basis-spitzenstrom i bm 200 ma junction temp. ? sperrschichttemperatur t j 150 c storage temperature ? lagerungstemperatur t s - 65?+ 150 c characteristics (t j = 25 c) kennwerte (t j = 25 c) min. typ. max. collector-base cutoff current ? kollektorreststrom i e = 0, v cb = 30 v i cb0 ? ? 100 na i e = 0, v cb = 30 v, t j = 125 ci cb0 ? ? 10 a emitter-base cutoff current ? emitterreststrom i c = 0, v eb = 5 v i eb0 ? ? 100 na collector saturation volt. ? kollektor-s?ttigungsspg. 2 ) i c = 500 ma, i b = 50 ma v cesat ? ? 500 mv
1 ) tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 2 ) mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschlu? 27 01.11.2003 general purpose transistors bcp 54, bcp 55, bcp 56 characteristics (t j = 25 c) kennwerte (t j = 25 c) min. typ. max. dc current gain ? kollekt or-basis-stromverh?ltnis 1 ) v ce = 2 v, i c = 150 ma bcp 5x-6 h fe 40 ? 100 bcp 5x-10 h fe 63 ? 160 bcp 5x-16 h fe 100 ? 250 v ce = 2 v, i c = 5 ma bcp 54... bcp56 h fe 63 ? ? v ce = 2 v, i c = 500 ma h fe 40 ? ? base-emitter voltage ? basis-emitter-spannung 1 ) v ce = 2 v, i c = 500 ma v beon ? ? 1 v gain-bandwidth produc t ? transitfrequenz v ce = 5 v, i c = 10 ma, f = 100 mhz f t ? 130 mhz ? dc current gain ratio of the complement. pairs verh?ltnis der stromverst. complement. paare h fe1 h fe2 ? ? 1.6 thermal resistance ? w?rmewiderstand junction to ambient air ? spe rrschicht zu umgebender luft r tha 95 k/w 2 ) junction to soldering point ? sperrschicht zu l?tpad r ths 14 k/w recommended complementary pnp transistors empfohlene komplement? re pnp-transistoren bcp 51, bcp 52, bcp 53
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