nesg2107m33 nec's npn silicon transistor california eastern laboratories ? ideal for osc., high-gain amplification applications ? high breakdown voltage technology for sige t ransistors ? 3-pin super lead-less minimold (m33) package features preliminary data sheet ordering information remark to order evaluation samples, contact your nearby sales of?ce. the unit sample quantity is 50 pcs. absolute maximum ratings (t a =+25oc) parameter symbol ratings unit collector to base voltage v cbo 13.0 v collector to emitter voltage v ceo 5.0 v emitter to base voltage v ebo 1.5 v collector current i c 100 ma total power dissipation p tot note 130 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb caut ion observe precautions when handling because these devices are sensitive to electrostatic discharge. part number quantity supplying form nesg2107m33-a 50 pcs (non reel) ? 8 mm wide embossed taping ? pin 2 (base) face the perforation side of the tape NESG2107M33-T3-A 10 kpcs/reel
nesg2107m33 electrical characteristics (t a =+25oc) notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank fb marking d7 h fe value 140 to 220 parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 100 na emitter cut-off current i ebo v eb = 0.5 v, i c = 0 ma ? ? 100 na dc current gain h fe note 1 v ce = 1 v, i c = 5 ma 140 180 220 ? rf characteristics reverse transfer capacitance c re note 2 v cb = 1 v, i e = 0 ma, f = 1 mhz ? 0.5 0.7 pf noise figure nf v ce = 1 v, i c = 5 ma, f = 2 ghz, z s = z opt ? 0.9 1.5 db associated gain g a v ce = 1 v, i c = 5 ma, f = 2 ghz, z s = z opt 7 10 ? db gain bandwidth product (1) f t v ce = 1 v, i c = 5 ma, f = 2 ghz 7 10 ? ghz gain bandwidth product (2) f t v ce = 1 v, i c = 20 ma, f = 2 ghz ? 20 ? ghz insertion power gain (1) |s 21e | 2 v ce = 1 v, i c = 5 ma, f = 2 ghz 7.5 9 ? db insertion power gain (2) |s 21e | 2 v ce = 1 v, i c = 20 ma, f = 2 ghz ? 10 ? db
nesg2107m33 package dimensions 3-pin super lead-less minimold (m33) (unit: mm) life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 07/01/2004 pin connections 1. e mitter 2. base 3. collect or
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