HZM6.8fa silicon epitaxial planar zener diode for surge absorb ade-208-442a(z) rev 1 september 1996 features HZM6.8fa has four devices, and can absorb external + and -surge. mpak-5 package is suitable for high density surface mounting and high speed assembly. ordering information type no. laser mark package code HZM6.8fa 68a mpak-5 outline 1 cathode 2 cathode 3 cathode 4 anode 5 cathode (top view) 1 2 543
HZM6.8fa absolute maximum ratings (ta = 25 c) item symbol value unit power dissipation pd *1 200 mw junction temperature tj 150 c storage temperature tstg -55 to +150 c note 1. four device total, with p.c board. electrical characteristics (ta = 25 c) *1 item symbol min typ max unit test condition zener voltage vz 6.47 ?\ 7.0 v iz = 5 ma, 40ms pulse reverse current ir ?\ ?\ 2 a vr = 3.5v capacitance c ?\ ?\ 130 pf vr = 0v, f = 1 mhz dynamic resistance r d ?\ ?\ 30 ? iz = 5 ma esd-capability ?\ 30 ?\ ?\ kv c =150pf, r = 330 ? , both forward and reverse direction 10 pulse *2 notes 1. per one device. 2. failure criterion ; ir ?? 2 a at vr = 3.5v.
HZM6.8fa main characteristic
HZM6.8fa package dimensions unit : mm 0.16 0 to 0.15 1.1 + 0.2 ?0.1 (0.8) (0.95) (0.95) (0.6) (0.6) 1.9 2.9 0.2 0.4 0.1 0.4 0.1 0.4 0.1 0.4 0.1 2.8 + 0.2 ?0.3 1.6 + 0.2 ?0.1 laser mark 68a 54 3 hitachi code jedec code eiaj code weight (g) mpak-5 0.013 1 cathode 2 cathode 3 cathode 4 anode 5 cathode 2 1
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