bd540, bd540a, bd540b, bd540c pnp silicon power transistors
1 june 1973 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the bd539 series 45 w at 25c case temperature 5 a continuous collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. these values apply when the base-emitter diode is open circuited. 2. derate linearly to 150c case temperature at the rate of 0.36 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) bd540 bd540a bd540b bd540c v cbo -40 -60 -80 -100 v collector-emitter voltage (i b = 0) (see note 1) bd540 bd540a bd540b bd540c v ceo -40 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -5 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 45 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w operating free air temperat ure r ange t a -65 to +150 c operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
bd540, bd540a, bd540b, bd540c pnp silicon power transistors 2
june 1973 - revised september 2002 specifications are subject to change without notice. notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma (see note 4) i b = 0 bd540 bd540a bd540b bd540c -40 -60 -80 -100 v i ces collector-emitter cut-off current v ce = -40 v v ce = -60 v v ce = -80 v v ce = -100 v v be =0 v be =0 v be =0 v be =0 bd540 bd540a bd540b bd540c -0.2 -0.2 -0.2 -0.2 ma i ceo collector cut-off current v ce = -30 v v ce = -60 v i b =0 i b =0 bd540/540a bd540b/540c -0.3 -0.3 ma i ebo emitter cut-off current v eb = -5 v i c =0 -1 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v v ce = -4 v i c =-0.5a i c = -1 a i c = -3 a (see notes 4 and 5) 40 30 12 v ce(sat) collector-emitter saturation voltage i b = -125 ma i b = -375 ma i b = -1 a i c = - 1a i c = -3 a i c = - 5a (see notes 4 and 5) -0.25 -0.8 -1.5 v v be base-emitter voltage v ce = -4 v i c = -3 a (see notes 4 and 5) -1.25 v h fe small signal forward current transfer ratio v ce = -10 v i c =-0.5a f = 1 khz 20 | h fe | small signal forward current transfer ratio v ce = -10 v i c =-0.5a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 2.78 c/w r ja junction to free air thermal resistance 62.5 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -1 a v be(off) = 4.3 v i b(on) = -0.1 a r l = 30 ? i b(off) = 0.1 a t p = 20 s, dc 2% 0.3 s t off turn-off time 1s
bd540, bd540a, bd540b, bd540c pnp silicon power transistors 3
june 1973 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -001 -01 -10 -10 h fe - dc current gain 10 100 1000 tcs632ah v ce = -4 v t p = 300 s, duty cycle < 2% t c = 25c t c = 80c collector-emitter saturation voltage vs base current i b - base current - ma -01 -10 -10 -100 -1000 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs632ab i c = -100 ma i c = -300 ma i c = -1 a i c = -3 a base-emitter voltage vs collector current i c - collector current - a -001 -01 -1 -10 v be - base-emitter voltage - v -05 -06 -07 -08 -09 -1 tcs632ac v ce = -4 v t c = 25c
bd540, bd540a, bd540b, bd540c pnp silicon power transistors 4
june 1973 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 sas632ae bd540 bd540a bd540b bd540c maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 tis631ac
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