hexfet ? power mosfet irfi530n pd -9.1353 v dss = 100v r ds(on) = 0.11 w i d = 11a l advanced process technology l isolated package l high voltage isolation = 2.5kvrms ? l sink to lead creepage dist. = 4.8mm l fully avalanche rated parameter min. typ. max. units r q jc junction-to-case ???? ???? 4.5 r q ja junction-to-ambient ???? ???? 65 thermal resistance parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 11 i d @ t c = 100c continuous drain current, v gs @ 10v 7.8 a i dm pulsed drain current ? ?? 60 p d @t c = 25c power dissipation 33 w linear derating factor 0.22 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 150 mj i ar avalanche current ? ? 9.0 a e ar repetitive avalanche current ? ? 6.3 mj dv/dt peak diode recovery dv/dt ?? 5.2 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings description fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design for which hexfet power mosfets are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. the to-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. the moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. this isolation is equivalent to using a 100 micron mica barrier with standard to-220 product. the fullpak is mounted to a heatsink using a single clip or by a single screw fixing. preliminary c/w
irfi530n parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? ??? 0.11 w v gs = 10v, i d = 6.6a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.4 ??? ??? s v ds = 50v , i d = 9.0a ? ??? ??? 25 v ds = 100v , v gs = 0v ??? ??? 250 v ds = 80v , v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 44 i d = 9.0a q gs gate-to-source charge ??? ??? 6.2 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 21 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time ??? 6.4 ??? v dd = 50v t r rise time ??? 27 ??? i d = 9.0a t d(off) turn-off delay time ??? 37 ??? r g = 12 w t f fall time ??? 25 ??? r d = 5.5 w, see fig. 10 ?? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 640 ??? v gs = 0v c oss output capacitance ??? 160 ??? v ds = 25v c rss reverse transfer capacitance ??? 88 ??? ? = 1.0mhz, see fig. 5 ? c drain to sink capacitance ??? 12 ??? ? = 1.0mhz nh a na i dss drain-to-source leakage current i gss l s internal source inductance ??? ??? ns 4.5 7.5 electrical characteristics @ t j = 25c (unless otherwise specified) ??? l d internal drain inductance ??? ??? ??? pf parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ?? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 6.6a, v gs = 0v ? t rr reverse recovery time ??? 130 190 ns t j = 25c, i f = 9.0a q rr reverse recovery charge ??? 650 970 nc di/dt = 100a/s ? ? source-drain ratings and characteristics a ??? ??? 60 ??? ??? 11 notes: ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? v dd = 15v, starting t j = 25c, l = 3.1mh r g = 25 w , i as = 9.0a. (see figure 12) ? t=60s, ?=60hz ? i sd 9.0a, di/dt 520a/s, v dd v (br)dss , t j 175c ? uses irf530n data and test conditions ? pulse width 300s; duty cycle 2%.
irfi530n fig 1. typical output characteristics, t j = 25 o c fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics, t j = 175 o c 1 10 100 0.1 1 10 100 i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v 2 0 s p u l s e w i d t h ? t = 2 5 c a 4 . 5 v j 1 10 100 0.1 1 10 100 4 . 5 v i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v a 2 0 s p u l s e w i d t h ? t = 1 7 5 c j 1 10 100 4 5 6 7 8 9 10 t = 2 5 c j g s v , g a t e - t o - s o u r c e v o l t a g e ( v ) d i , d r a i n - t o - s o u r c e c u r r e n t ( a ) v = 5 0 v 2 0 s p u l s e w i d t h ? d s t = 1 7 5 c j a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , j u n c t i o n t e m p e r a t u r e ( c ) r , d r a i n - t o - s o u r c e o n r e s i s t a n c e d s ( o n ) ( n o r m a l i z e d ) v = 1 0 v ? g s a ? i = 1 5 a d
fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage irfi530n 0 200 400 600 800 1000 1200 1 10 100 c , c a p a c i t a n c e ( p f ) d s v , d r a i n - t o - s o u r c e v o l t a g e ( v ) a v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g s i s s g s g d d s r s s g d o s s d s g d c ? i s s c ? o s s c ? r s s 0 4 8 12 16 20 0 5 10 15 20 25 30 35 40 45 q , t o t a l g a t e c h a r g e ( n c ) g v , g a t e - t o - s o u r c e v o l t a g e ( v ) g s ? v = 8 0 v ? v = 5 0 v v = 2 0 v a f o r t e s t c i r c u i t ? s e e f i g u r e 1 3 i = 9 . 0 a d d s d s d s 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 2 5 c j v = 0 v ? g s v , s o u r c e - t o - d r a i n v o l t a g e ( v ) i , r e v e r s e d r a i n c u r r e n t ( a ) s d s d a t = 1 7 5 c j 1 10 100 1000 1 10 100 1000 v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s i , d r a i n c u r r e n t ( a ) o p e r a t i o n i n t h i s a r e a l i m i t e d b y r d d s ( o n ) 1 0 s 1 0 0 s 1 m s 1 0 m s a ? t = 2 5 c ? t = 1 7 5 c s i n g l e p u l s e c j
fig 9. maximum drain current vs. case temperature irfi530n fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v v dd 0 2 4 6 8 10 12 25 50 75 100 125 150 175 c i , d r a i n c u r r e n t ( a m p s ) d t , c a s e t e m p e r a t u r e ( c ) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 t h j c d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) a t h e r m a l r e s p o n s e ( z ) p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ?
irfi530n fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms 10 v 10 v fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 13b. gate charge test circuit 0 50 100 150 200 250 300 350 25 50 75 100 125 150 175 j e , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) a s a s t a r t i n g t , j u n c t i o n t e m p e r a t u r e ( c ) v = 2 5 v i t o p 3 . 7 a 6 . 4 a b o t t o m 9 . 0 a d d d
irfi530n * v gs = 5v for logic level devices ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * fig 14. for n-channel hexfets peak diode recovery dv/dt test circuit
irfi530n package outline ? to-220 full-pak dimensions are shown in millimeters (inches) part marking information l e a d a s s i g n m e n t s 1 - g a t e 2 - d r a i n 3 - s o u r c e n o t e s : 1 d i m e n s i o n i n g & t o l e r a n c i n g p e r a n s i y 1 4 . 5 m , 1 9 8 2 2 c o n t r o l l i n g d i m e n s i o n : i n c h . d c a b m i n i m u m c r e e p a g e d i s t a n c e b e t w e e n a - b - c - d = 4 . 8 0 ( . 1 8 9 ) 3 x 2 . 8 5 ( . 1 1 2 ) 2 . 6 5 ( . 1 0 4 ) 2 . 8 0 ( . 1 1 0 ) 2 . 6 0 ( . 1 0 2 ) 4 . 8 0 ( . 1 8 9 ) 4 . 6 0 ( . 1 8 1 ) 7 . 1 0 ( . 2 8 0 ) 6 . 7 0 ( . 2 6 3 ) 3 . 4 0 ( . 1 3 3 ) 3 . 1 0 ( . 1 2 3 ) ? - a - 3 . 7 0 ( . 1 4 5 ) 3 . 2 0 ( . 1 2 6 ) 1 . 1 5 ( . 0 4 5 ) m i n . 3 . 3 0 ( . 1 3 0 ) 3 . 1 0 ( . 1 2 2 ) - b - 0 . 9 0 ( . 0 3 5 ) 0 . 7 0 ( . 0 2 8 ) 3 x 0 . 2 5 ( . 0 1 0 ) m a m b 2 . 5 4 ( . 1 0 0 ) 2 x 3 x 1 3 . 7 0 ( . 5 4 0 ) 1 3 . 5 0 ( . 5 3 0 ) 1 6 . 0 0 ( . 6 3 0 ) 1 5 . 8 0 ( . 6 2 2 ) 1 2 3 1 0 . 6 0 ( . 4 1 7 ) 1 0 . 4 0 ( . 4 0 9 ) 1 . 4 0 ( . 0 5 5 ) 1 . 0 5 ( . 0 4 2 ) 0 . 4 8 ( . 0 1 9 ) 0 . 4 4 ( . 0 1 7 ) p a r t n u m b e r i n t e r n a t i o n a l r e c t i f i e r l o g o d a t e c o d e ( y y w w ) y y = y e a r w w = w e e k a s s e m b l y l o t c o d e e 4 0 1 9 2 4 5 i r f i 8 4 0 g e x a m p l e : t h i s i s a n i r f i 8 4 0 g w i t h a s s e m b l y l o t c o d e e 4 0 1 a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/96
|
