simplified cross-section of 40v cmos p-epitaxy d g s 40v nxf n+ n-extended n+ n-extended p+ b p-epitaxy d g s 40v pxf p+ p-extended p+ p-extended n+ b n-well C20F 2.0m 5/40v cmos process C20F overview ? thick gate oxide ? double poly, two layer metal ? p-type epitaxy over p+ substrate ? allows the integration of 5v cmos with 40v cmos which can operate with 40v on both gate and drain. features ? full integration of 5v and 40v mixed signal cmos on the same die ? single and double drain extensions on 40v nmos and 40v pmos ? 40v double poly capacitor ? high value (10k : /sq) and low tcr poly resistor options ? mixed signal cadence foundry design kit (fdk) available mixed signal capabilities ? 40v double poly capacitor (0.48ff/m2) ? high value poly resistor option (10k : /sq) ? 5v 2m cmos ? 40v cmos propogation delay:-1.15ns/stage for single extended ? 2.0ns/stage for double extended applications ? el displays ? ccd drivers ? motor control ? instrumentation ? telecom line cards layout rules layer width (m) space (m) poly 1 2 2.5 poly 2 2 2 contact 2 x 2 2 metal 1 2.0 2.0 via 2.4 x 2.4 2.0 metal 2 2.8 2.4 1 26-sep-02 03-70-00148-00 www.dalsa.com
dalsa semiconductor ? C20F 5/40v cmos process electrical parameters of representative transistors parameter 5v nmos 5v pmos 40v nmos 40v pmos w x l ( p m) 50 x 2 50 x 2 50 x 10 50 x 6 vt (v) 1.3 1.7 1.3 1.6 ids (ma) 3.0 0.9 9.5 9.0 bvdss (v) 15 18 79 46 isub ( p a/ p m) 0.0006 - 1.94 - ron ( : ) 589 2200 1100 1400 double extended 40v nmos (l=10m, w=50m) double extended 40v pmos (l=6m, w=50m) for more information dalsa semiconductor 18 blvd de laroport bromont quebec canada j2l 1s7 tel : +01 800 718 9701 fax : +01 450 534 3201 e-mail: sales@dalsasemi.com www.dalsasemi.com C20F 2.0m 5/40v cmos process 26-sep-02 03-70-00148-00 www.dalsasemi.com
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